半導(dǎo)體英文詞匯

1、Acceptor - An element, such as boron, indium, and gallium used to create a free hole in a semiconductor. The acceptor atoms are required to have one less valence electron than the semiconductor.受主 - 一種用來在半導(dǎo)體中形成空穴的元素，比如硼、銦和鎵。受主原子必須比半導(dǎo)體元素少一價(jià)電子Alignment Precision - Displacement of patterns that occurs

2、during the photolithography process.套準(zhǔn)精度 - 在光刻工藝中轉(zhuǎn)移圖形的精度。Anisotropic - A process of etching that has very little or no undercutting 各向異性 - 在蝕刻過程中，只做少量或不做側(cè)向凹刻。Area Contamination - Any foreign particles or material that are found on the surface of a wafer. This is viewed as discolored or smudged,

3、 and it is the result of stains, fingerprints, water spots, etc.沾污區(qū)域 - 任何在晶圓片表面的外來粒子或物質(zhì)。由沾污、手印和水滴產(chǎn)生的污染。Azimuth, in Ellipsometry - The angle measured between the plane of incidence and the major axis of the ellipse.橢圓方位角 - 測量入射面和主晶軸之間的角度。Backside - The bottom surface of a silicon wafer. (Note: This t

4、erm is not preferred; instead, use back surface.)背面 - 晶圓片的底部表面。（注：不推薦該術(shù)語，建議使用“背部表面”）Base Silicon Layer - The silicon wafer that is located underneath the insulator layer, which supports the silicon film on top of the wafer.底部硅層 - 在絕緣層下部的晶圓片，是頂部硅層的基礎(chǔ)。Bipolar - Transistors that are able to use both ho

5、les and electrons as charge carriers.雙極晶體管 - 能夠采用空穴和電子傳導(dǎo)電荷的晶體管。Bonded Wafers - Two silicon wafers that have been bonded together by silicon dioxide, which acts as an insulating layer.綁定晶圓片 - 兩個(gè)晶圓片通過二氧化硅層結(jié)合到一起，作為絕緣層。Bonding Interface - The area where the bonding of two wafers occurs.綁定面 - 兩個(gè)晶圓片結(jié)合的接觸區(qū)

6、。Buried Layer - A path of low resistance for a current moving in a device. Many of these dopants are antimony and arsenic.埋層 - 為了電路電流流動而形成的低電阻路徑，攙雜劑是銻和砷。Buried Oxide Layer (BOX) - The layer that insulates between the two wafers.氧化埋層(BOX) - 在兩個(gè)晶圓片間的絕緣層。Carrier - Valence holes and conduction electrons

7、 that are capable of carrying a charge through a solid surface in a silicon wafer.載流子 - 晶圓片中用來傳導(dǎo)電流的空穴或電子。Chemical-Mechanical Polish (CMP) - A process of flattening and polishing wafers that utilizes both chemical removal and mechanical buffing. It is used during the fabrication process.化學(xué)-機(jī)械拋光(CMP)

8、- 平整和拋光晶圓片的工藝，采用化學(xué)移除和機(jī)械拋光兩種方式。此工藝在前道工藝中使用。Chuck Mark - A mark found on either surface of a wafer, caused by either a robotic end effector, a chuck, or a wand.卡盤痕跡 - 在晶圓片任意表面發(fā)現(xiàn)的由機(jī)械手、卡盤或托盤造成的痕跡。Cleavage Plane - A fracture plane that is preferred.解理面 - 破裂面Crack - A mark found on a wafer that is greater

9、 than 0.25 mm in length.裂紋 - 長度大于0.25毫米的晶圓片表面微痕。Crater - Visible under diffused illumination, a surface imperfection on a wafer that can be distinguished individually.微坑 - 在擴(kuò)散照明下可見的，晶圓片表面可區(qū)分的缺陷。Conductivity (electrical) - A measurement of how easily charge carriers can flow throughout a material.傳導(dǎo)性

10、（電學(xué)方面） - 一種關(guān)于載流子通過物質(zhì)難易度的測量指標(biāo) 。Conductivity Type - The type of charge carriers in a wafer, such as “N-type” and “P-type”.導(dǎo)電類型 - 晶圓片中載流子的類型，N型和P型。Contaminant, Particulate (see light point defect)污染微粒 （參見光點(diǎn)缺陷）Contamination Area - An area that contains particles that can negatively affect the characteri

11、stics of a silicon wafer.沾污區(qū)域 - 部分晶圓片區(qū)域被顆粒沾污，造成不利特性影響。Contamination Particulate - Particles found on the surface of a silicon wafer.沾污顆粒 - 晶圓片表面上的顆粒。Crystal Defect - Parts of the crystal that contain vacancies and dislocations that can have an impact on a circuits electrical performance.晶體缺陷 - 部分晶體包

12、含的、會影響電路性能的空隙和層錯(cuò)。Crystal Indices (see Miller indices)晶體指數(shù) （參見米勒指數(shù)）Depletion Layer - A region on a wafer that contains an electrical field that sweeps out charge carriers.耗盡層 - 晶圓片上的電場區(qū)域，此區(qū)域排除載流子。Dimple - A concave depression found on the surface of a wafer that is visible to the eye under the correc

13、t lighting conditions.表面起伏 - 在合適的光線下通過肉眼可以發(fā)現(xiàn)的晶圓片表面凹陷。Donor - A contaminate that has donated extra “free” electrons, thus making a wafer “N-Type”.施主 - 可提供“自由”電子的攙雜物，使晶圓片呈現(xiàn)為N型。Dopant - An element that contributes an electron or a hole to the conduction process, thus altering the conductivity. Dopants

14、for silicon wafers are found in Groups III and V of the Periodic Table of the Elements.攙雜劑 - 可以為傳導(dǎo)過程提供電子或空穴的元素，此元素可以改變傳導(dǎo)特性。晶圓片攙雜 劑可以在元素周期表的III 和 V族元素中發(fā)現(xiàn)。Doping - The process of the donation of an electron or hole to the conduction process by a dopant.摻雜 - 把攙雜劑摻入半導(dǎo)體，通常通過擴(kuò)散或離子注入工藝實(shí)現(xiàn)。Edge Chip and Inde

15、nt - An edge imperfection that is greater than 0.25 mm.芯片邊緣和縮進(jìn) - 晶片中不完整的邊緣部分超過0.25毫米。Edge Exclusion Area - The area located between the fixed quality area and the periphery of a wafer. (This varies according to the dimensions of the wafer.)邊緣排除區(qū)域 - 位于質(zhì)量保證區(qū)和晶圓片外圍之間的區(qū)域。（根據(jù)晶圓片的尺寸不同而有所不同。）Edge Exclusion

16、, Nominal (EE) - The distance between the fixed quality area and the periphery of a wafer.名義上邊緣排除(EE) - 質(zhì)量保證區(qū)和晶圓片外圍之間的距離。Edge Profile - The edges of two bonded wafers that have been shaped either chemically or mechanically.邊緣輪廓 - 通過化學(xué)或機(jī)械方法連接起來的兩個(gè)晶圓片邊緣。Etch - A process of chemical reactions or physic

17、al removal to rid the wafer of excess materials.蝕刻 - 通過化學(xué)反應(yīng)或物理方法去除晶圓片的多余物質(zhì)。Fixed Quality Area (FQA) - The area that is most central on a wafer surface.質(zhì)量保證區(qū)(FQA) - 晶圓片表面中央的大部分。Flat - A section of the perimeter of a wafer that has been removed for wafer orientation purposes.平邊 - 晶圓片圓周上的一個(gè)小平面，作為晶向定位的依

18、據(jù)。Flat Diameter - The measurement from the center of the flat through the center of the wafer to the opposite edge of the wafer. (Perpendicular to the flat)平口直徑 - 由小平面的中心通過晶圓片中心到對面邊緣的直線距離。Four-Point Probe - Test equipment used to test resistivity of wafers.四探針 - 測量半導(dǎo)體晶片表面電阻的設(shè)備。Furnace and Thermal Pr

19、ocesses - Equipment with a temperature gauge used for processing wafers. A constant temperature is required for the process.爐管和熱處理 - 溫度測量的工藝設(shè)備，具有恒定的處理溫度。Front Side - The top side of a silicon wafer. (This term is not preferred; use front surface instead.)正面 - 晶圓片的頂部表面（此術(shù)語不推薦，建議使用“前部表面”）。Goniometer -

20、 An instrument used in measuring angles.角度計(jì) - 用來測量角度的設(shè)備。Gradient, Resistivity (not preferred; see resistivity variation)電阻梯度 （不推薦使用，參見“電阻變化”）Groove - A scratch that was not completely polished out.凹槽 - 沒有被完全清除的擦傷。Hand Scribe Mark - A marking that is hand scratched onto the back surface of a wafer fo

21、r identification purposes.手工印記 - 為區(qū)分不同的晶圓片而手工在背面做出的標(biāo)記。Haze - A mass concentration of surface imperfections, often giving a hazy appearance to the wafer.霧度 - 晶圓片表面大量的缺陷，常常表現(xiàn)為晶圓片表面呈霧狀。Hole - Similar to a positive charge, this is caused by the absence of a valence electron.空穴 - 和正電荷類似，是由缺少價(jià)電子引起的。Ingot

22、- A cylindrical solid made of polycrystalline or single crystal silicon from which wafers are cut.晶錠 - 由多晶或單晶形成的圓柱體，晶圓片由此切割而成。Laser Light-Scattering Event - A signal pulse that locates surface imperfections on a wafer.激光散射 - 由晶圓片表面缺陷引起的脈沖信號。Lay - The main direction of surface texture on a wafer.層 -

23、晶圓片表面結(jié)構(gòu)的主要方向。Light Point Defect (LPD) (Not preferred; see localized light-scatterer)光點(diǎn)缺陷(LPD) （不推薦使用，參見“局部光散射”）Lithography - The process used to transfer patterns onto wafers.光刻 - 從掩膜到圓片轉(zhuǎn)移的過程。Localized Light-Scatterer - One feature on the surface of a wafer, such as a pit or a scratch that scatters

24、light. It is also called a light point defect.局部光散射 - 晶圓片表面特征，例如小坑或擦傷導(dǎo)致光線散射，也稱為光點(diǎn)缺陷。Lot - Wafers of similar sizes and characteristics placed together in a shipment.批次 - 具有相似尺寸和特性的晶圓片一并放置在一個(gè)載片器內(nèi)。Majority Carrier - A carrier, either a hole or an electron that is dominant in a specific region, such as

25、electrons in an N-Type area.多數(shù)載流子 - 一種載流子，在半導(dǎo)體材料中起支配作用的空穴或電子，例如在N型中是電子。Mechanical Test Wafer - A silicon wafer used for testing purposes.機(jī)械測試晶圓片 - 用于測試的晶圓片。Microroughness - Surface roughness with spacing between the impurities with a measurement of less than 100 m.微粗糙 - 小于100微米的表面粗糙部分。Miller Indices

26、, of a Crystallographic Plane - A system that utilizes three numbers to identify plan orientation in a crystal.Miller索指數(shù) - 三個(gè)整數(shù)，用于確定某個(gè)并行面。這些整數(shù)是來自相同系統(tǒng)的基本向量。Minimal Conditions or Dimensions - The allowable conditions for determining whether or not a wafer is considered acceptable.最小條件或方向 - 確定晶圓片是否合格的允

27、許條件。Minority Carrier - A carrier, either a hole or an electron that is not dominant in a specific region, such as electrons in a P-Type area.少數(shù)載流子 - 在半導(dǎo)體材料中不起支配作用的移動電荷，在P型中是電子，在N型中是空穴。Mound - A raised defect on the surface of a wafer measuring more than 0.25 mm.堆垛 - 晶圓片表面超過0.25毫米的缺陷。Notch - An inden

28、t on the edge of a wafer used for orientation purposes.凹槽 - 晶圓片邊緣上用于晶向定位的小凹槽。Orange Peel - A roughened surface that is visible to the unaided eye.桔皮 - 可以用肉眼看到的粗糙表面Orthogonal Misorientation -直角定向誤差 -Particle - A small piece of material found on a wafer that is not connected with it.顆粒 - 晶圓片上的細(xì)小物質(zhì)。Par

29、ticle Counting - Wafers that are used to test tools for particle contamination.顆粒計(jì)算 - 用來測試晶圓片顆粒污染的測試工具。Particulate Contamination - Particles found on the surface of a wafer. They appear as bright points when a collineated light is shined on the wafer.顆粒污染 - 晶圓片表面的顆粒。Pit - A non-removable imperfectio

30、n found on the surface of a wafer.深坑 - 一種晶圓片表面無法消除的缺陷。Point Defect - A crystal defect that is an impurity, such as a lattice vacancy or an interstitial atom.點(diǎn)缺陷 - 不純凈的晶缺陷，例如格子空缺或原子空隙。Preferential Etch -優(yōu)先蝕刻 -Premium Wafer - A wafer that can be used for particle counting, measuring pattern resolution

31、 in the photolithography process, and metal contamination monitoring. This wafer has very strict specifications for a specific usage, but looser specifications than the prime wafer.測試晶圓片 - 影印過程中用于顆粒計(jì)算、測量溶解度和檢測金屬污染的晶圓片。對于具體應(yīng)用該晶圓片有嚴(yán)格的要求，但是要比主晶圓片要求寬松些。Primary Orientation Flat - The longest flat found o

32、n the wafer.主定位邊 - 晶圓片上最長的定位邊。Process Test Wafer - A wafer that can be used for processes as well as area cleanliness.加工測試晶圓片 - 用于區(qū)域清潔過程中的晶圓片。Profilometer - A tool that is used for measuring surface topography.表面形貌劑 - 一種用來測量晶圓片表面形貌的工具。Resistivity (Electrical) - The amount of difficulty that charged

33、carriers have in moving throughout material.電阻率（電學(xué)方面） - 材料反抗或?qū)闺姾稍谄渲型ㄟ^的一種物理特性。Required - The minimum specifications needed by the customer when ordering wafers.必需 - 訂購晶圓片時(shí)客戶必須達(dá)到的最小規(guī)格。Roughness - The texture found on the surface of the wafer that is spaced very closely together.粗糙度 - 晶圓片表面間隙很小的紋理。Saw

34、 Marks - Surface irregularities鋸痕 - 表面不規(guī)則。Scan Direction - In the flatness calculation, the direction of the subsites.掃描方向 - 平整度測量中，局部平面的方向。Scanner Site Flatness -局部平整度掃描儀 -Scratch - A mark that is found on the wafer surface.擦傷 - 晶圓片表面的痕跡。Secondary Flat - A flat that is smaller than the primary orie

35、ntation flat. The position of this flat determines what type the wafer is, and also the orientation of the wafer.第二定位邊 - 比主定位邊小的定位邊，它的位置決定了晶圓片的類型和晶向。Shape -形狀 -Site - An area on the front surface of the wafer that has sides parallel and perpendicular to the primary orientation flat. (This area is re

36、ctangular in shape)局部表面 - 晶圓片前面上平行或垂直于主定位邊方向的區(qū)域。Site Array - a neighboring set of sites局部表面系列 - 一系列的相關(guān)局部表面。Site Flatness -局部平整 -Slip - A defect pattern of small ridges found on the surface of the wafer.劃傷 - 晶圓片表面上的小皺造成的缺陷。Smudge - A defect or contamination found on the wafer caused by fingerprints.污跡 - 晶圓片上指紋造成的缺陷或污染。Sori -Striation - Defects or contaminations found in the shape of a helix.條痕 - 螺紋上的缺陷或污染。Subsite, of a Site - An area found within the site, also rectangular. The