MEMS和半導(dǎo)體工藝中的濕法腐蝕配方

1、蘇州能斯達(dá)電子科技有限公司wwwJeanstaritechxom蘇州能斯達(dá)電子科技有限公司MEMS和半導(dǎo)體工藝材料配比50種材料的濕法蘇州能斯達(dá)電子科技有限公司的工程師整理了MEMS和半導(dǎo)體工藝中接近腐蝕的刻蝕液及配比，趁著新年，給大家送一份豪華大禮包。1. 鋁-AluminumCA/seeJillH2CSHFLiaHCIdiNQ3;|-lZOcrHOH3PC4 dNOltiAcHJPCMtHArHNOJiHX)40J;b34MPOMArHUSH 冗8-7RTnuln/mketi4:*l ;1HO：H C.5.61511-4HJHJ4 1Ac：HO1H2O丄5008:1:1H 專PC4 T?Q

2、2：H2OICO3;上5vu：l.S：G9:l 31H蝕吹4;上5HCIe CIh(H2GFfCi?：H；O100 F10%k3FvlCNj&100K6 r d ：)NH4CttH2O2H2O砂NH4O4Eut日 or concstritfrdhk加8-10%怕卜ecubolfaig曲Rr?MeOH2. 砷化鋁鎵-Aluminum Gallium Arsenide1. 1:1:30- H2SO4:H2O2 - 60 ?/sec2. 8:3:400 NH3:H2O2:H2O 25 ?/sec3. 1:1:10 HF:H2O2:H2o 80 ?/sec3. 三氧化二鋁 / 鋁/ 藍(lán)寶石-Alumi

3、num Trioxide / Alumina /Sapphire1. 1:1:3 NH4OH:H2O2:H2O 80 C2. 10% Br2:MeOH3. 7ml:4g - H3PO:Cr2O34. 銻-Antimony1. 1:1:1- HCl:HNO3:H2O2. 90:10:1- H2O:HNO3:HF3. 3:3:1:1- H3PO4:HNO3:CH3COOH:H2O 65. 1:25 NH3OH:H2O2 1000 ?/min15. 金-Gold1. Aqua Regia 3:1 HCl:HNO3 10-15 micro ns/min RT, 25-50micro ns/min 35

4、 C2. Chrome Regia 3:10-20% HCl:CrO33. H2SeO4 - Temp should be hot, etch is slow4. KCN in H20- good for stripping gold from alumina, quartz, sapphiresubstrates, semic on ductor wafers and metal parts5. 4g:2g:10ml- KI:I2:H2O Hot (70 C ) 280 nm/min6. 1:2:3- HF:HAc:HNO37. 30:30:50:0.6- HF:HNO3:HAc:Br28.

5、 NaCN:H2O29. 7g:25:g:100ml KI:Br2:H2O10. 9g:1g:50ml- KBr:Br2:H2O800 nm/min11. 9g:1g:50ml- NaBr:Br2:H2O400nm/min12. 400g:100g:400ml- I2:KI:H2O 55 C 1270?s/sec13. 1:2:10- I2:KI:H2O14. Au mask etch 4g:1g:40ml- KI:I2:H2O 1min/micron16. 鉿-Hafnium1. 20:1:1- H2O:HF:H2O2仃.銦-In dium1. Aqua Regia 3:1- HCI:HNO

6、3 hot2. HCl boiling, fast3. IPA4. EOH5. MeOH6. Rare Earth In dium Etcha nts18. 砷化銦鎵-Indium Gallium Arsenide1. 1:1:20- H2SO4:H2O2:H2O - 30 ?s/sec19. 鎵銦磷-Indium Gallium Phosphide1. cone HCl - fast20. 磷化銦-Indium Phosphide1. 1:1- HCl:H3PO4 - fast21. 磷化銦氧化物腐蝕劑-Indium Phosphide Oxide Etchants1. NH40H22. I

7、TO-In dium Tin Oxide1. 1:1- HCl:H2O 8 ?s/sec2. 1:1:10- HF:H2O2:H2O 125 ?s/sec23. 銥-Iridium1. Aqua Regia 3:1- HCI:HNO3 hot24. 鐵-Iron1. 1:1- H2O:HCL2. 1:1- H2O:HNO33. 1:2:10- I2:KI:H2O25. 鉛-Lead1. 1:1- HAc:H2O226. 鎂-Mag nesium1.10ml:1g- H2O:NaOH followed by 5ml:1g - H2O:CrO327. 鉬-Molybe ndum1.1:1- HCl

8、:H2O228. 鎳-Nickel1. 1:1:1- HNO3:HAc:Acetone2. 1:1- HF:HNO33. 30% FeCl34. 3:1:5:1 HNO3:H2SO4:HAc:H2O 85 C 10 micro ns/min5. 3:7 HNO3:H2O6. 1:1- HN03:HAc7. 10% g/ml Ce(NH4)2(NO3)6:H208. HF, concentrated- slow etchant9. H3PO4 - slow etchants10. HNO3- rapid etchant11. HF:HNO3 etch rate determined by rat

9、io, the greater the amount of HF the slower the reacti on12. 4:1- HCl:HNO3 - in crease HNO3 concen tration in creases etchrate13. 30% FeCl314. 5g:1ml:150ml- 2NH4NO3.Ce(NO3)3.4(H2O):HNO3:H2Odecreas ing HNO3 amount in creases the etch rate15. 3:3:1:1 H3PO4:HNO3:CH3COOH:H2O 15min/micron RT withair expo

10、sure every 15 sec onds29. 鈮-Niobium1. 1:1- HF:HNO330. 鈀-Palladium1. Aqua Regia 3:1- HCl:HNO3 hot31. 光刻膠-Photoresist (AZ type)1. Ge neral Polymer2. 5:1 - NH4OH:H2O2- 120 C3. 5:1 - H2SO4:H2O24. H2SO4:(NH4)2S2O85. Acet one32. 鉑-Plati num1. Aqua Regia 3:1- HCl:HNO3 Hot2. Molten Sulfur33. 聚合物-Polymer1. 5

11、:1-NH4OH:H2O2 - 120 C2. 3:1-H2SO4:H2O234. 聚合物-Polymer1. 1:1-HF:H2O2. 1:1-HF:HNO33. Sodium Carbon ate boili ng4. HF cone35. 錸、銠和釘-Rhenium, Rhodium and Ruthenium1. Aqua Regia 3:1- HCl:HNO3 - Hot36. 硅-Silicon1. 64:3:33- HNO3:NH4F:H2O 100 ?s/s2. 61:11:28- ethylenediamine:C6H4(OH)2:H2O 78?s/s3. 108ml:350

12、g:1000ml- HF:NH4F:H2O slow 0.5 ?s/min4. 1:1:50 HF:HNO3:H2O slow etch5. KCl dissolved in H2O6. KOH:H2O:Br2/l27. KOH - see sect ion on KOH etchi ng of silic on8. 1:1:1.4:0.15%:0.24%- HF:HNO3:HAc:l2:triton9. 1:6:3- HF:HNO3:HAc and 0.19 g NaI per 100 ml solution10. 1:4- Iodine Etch:HAc11. 0.010 N NaI12.

13、 NaOH13. HF:HNO314. 1:1:1- HF:HNO3:H2O37. 二氧化硅 / 石英 / 玻璃-Silicon Dioxide / Quartz / Glass1. BOE 1:5:5 HF:NH4HF:H2O 20 ?s/s2. HF:HNO33. 3:2:60 HF:HNO3:H20 2.5 ?s/sec at RT4. BHF 1:10, 1:100, 1:20 HF:NH4F(sat)5. Secco etch 2:1 HF:1.5M K2Cr2O76. 5:1 NH4.HF:NaF/L (in grams)7. 1g:1ml:10ml:10ml NH4F.HF:HF

14、:H2O:glyceri n8. HF - hot9. 1:1 1:15, 1:100 HF:H2O10. BOE HF:NH4F:H2O11. 1:6 BOE:H2O12. 5:43, 1:6 HF:NH4F(40%)13. NaCO3 100C 8.8 mm/h14. 5% NaOH 100 C 150 mm/h15. 5% HCl 95C 0.5mm/day16. KOH see KOH etching of silicon dioxide and silicon nitride38. 氮化硅-Silicon Nitride1. 1:60 or 1:20 HF:H2O 1000-2000

15、?s/min2. BHF 1:2:2 HF:NH4F:H2O slow attack- but faster for siliconoxyn itride3. 1:5 or 1:9 HF:NH4F (40%)0.01-0.02 micro ns/seco nd4. 3:25 HF:NH4F.HF(sat)5. 50ml:50g:100ml:50ml HF:NH4F.HF:H2O:glycerin- glycerinprovides more uni form removal6. BOE HF:NH4F:H2O7. 18g:5g:100ml NaOH:KHC8H4O4:H2O boili ng

16、160?s/mi n, betterwith silicon oxynitride8. 9:g25ml NaOH:H20 - boiling 160?s/min9. 18g:5g:100ml NaOH:(NH4)2S2O8:H2O- boiling 160?s/min10. A) 5g:100ml NH4F.HF:H2O B)1g:50ml:50ml I2:H2O:glycerin- mixA and B 1:1 whe n ready to use. RT 180 A/mi n39. 銀-Silver1. 1:1 NH4OH:H2O22. 3:3:23:1 H3PO4:HNO3:CH3COO

17、H:H2O10mi n/100?s3. 1:1:4 NH4OH:H2O2:CH3OH .36micro n/min resist4. 1:1:1 HCI:HNO3:H2O5. 1-8:1HNO3:H2O6. 1 M HNO3 + light40. 不銹鋼-Stainless Steel1. 1:1 HF:HNO341. 鉭-Ta ntalum1. 1:1 HF:HNO342. 錫-Tin1. 1:1HF:HCL2. 1:1 HF:HNO33. 1:1 HF:H2O4. 2:7 HCIO4:HAc43. 鈦-Tita nium1. 50:1:1 H2O:HF:HNO32. 20:1:1 H2O:

18、HF:H2O23. RCA-1 100 min/micro n4. x%Br2:ethyl acetate HOT5. x%l2:MeOH - HOT6. HF:CuSO47. 1:2 NH4OH:H2O28. 1:2:7, 1:5:4, 1:4:5(18 microns/min), 1:1:50 HF:HNO3:H2O9. COOHCOOH:H2O - any concentration10. 1:1:20 HF:H2O2:HNO311. 1:9 HF:H2O - 12 ?s/min12. HF:HCL:H2O13. HCL - cone14. %KOH - cone15. %NaOH- c

19、one16. 20% H2SO4 1 micron/min17. CCI3COOC2H518. 25%HCOOH19. 20%H3PO420. HF44. 鎢-Tun gste n1. 1:1 HF:HNO32. 1:1 HF:HNO3 thin films3. 3:7 HF:HNO34. 4:1 HF:HNO3 - rapid attack5. 1:2 NH4OH:H2O2 thin films good for etchi ng tun gsten from sta ini ess steel, glass, copper and ceramics. Will etch tita nium as well.6. 305g:44.5g:1000ml K3Fe(CN)6:NaOH:H2O- rapid etch7. HCl - slow etch (dilute or concentrated)8. HNO3 - very slow etch (dilute or concentrated)9. H2SO4 - slow etch (dilu