壓控振蕩器(VCO)技術(shù)綜述外文翻譯

1、壓控振蕩器(VCO )技術(shù)綜述1. 前言壓控振蕩器(voltage-c on trolled oscillator, VCO)是一種以電壓輸入來(lái)用來(lái)控制振蕩 頻率的電子振蕩電路，是現(xiàn)代無(wú)線電通信系統(tǒng)的重要組成部分課題。 在當(dāng)今集成電路向尺 寸更小、頻率更高、功耗更少、價(jià)格更低發(fā)展的趨勢(shì)下，應(yīng)用標(biāo)準(zhǔn)工藝設(shè)計(jì)生產(chǎn)高性能 的壓控振蕩器已是射頻集成電路中的一個(gè)重要課題。環(huán)形振蕩器易于集成，可調(diào)頻率范 圍大，但相位噪聲不如性能不如 LC振蕩器。LC壓控振蕩器要求高品質(zhì)因素的無(wú)源器 件，需要片上電感和變?nèi)莨芷骷拍芗杉伞Ｕ袷幤髯云湔Q生以來(lái)就一直在通信、電子、航海航空航天及醫(yī)學(xué)等領(lǐng)域扮演重要的 角色，具

2、有廣泛的用途。在無(wú)線電技術(shù)發(fā)展的初期，它就在發(fā)射機(jī)中用來(lái)產(chǎn)生高頻載波 電壓，在超外差接收機(jī)中用作本機(jī)振蕩器，成為發(fā)射和接收設(shè)備的基本部件。隨著電子 技術(shù)的迅速發(fā)展，振蕩器的用途也越來(lái)越廣泛，例如在無(wú)線電測(cè)量?jī)x器中，它產(chǎn)生各種 頻段的正弦信號(hào)電壓：在熱加工、熱處理、超聲波加工和某些醫(yī)療設(shè)備中，它產(chǎn)生大功率 的高頻電能對(duì)負(fù)載加熱；某些電氣設(shè)備用振蕩器做成的無(wú)觸點(diǎn)開關(guān)進(jìn)行控制；電子鐘和電子手表中采用頻率穩(wěn)定度很高的振蕩電路作為定時(shí)部件等。尤其在通信系統(tǒng)電路中，壓 控振蕩器(VCO)是其關(guān)鍵部件，特別是在鎖相環(huán)電路、時(shí)鐘恢復(fù)電路和頻率綜合器電路 等更是重中之重，可以毫不夸張地說(shuō)在電子通信技術(shù)領(lǐng)域，VC

3、O幾乎與電流源和運(yùn)放具有同等重要地位。2. 主題2.1 VCO的發(fā)展過(guò)程上世紀(jì)初，Armstrong發(fā)明了電子管振蕩器，經(jīng)Hartley改進(jìn)電路設(shè)計(jì)并開發(fā)成功電 子管VCO。電子管VCO的振蕩頻率是通過(guò)改變振蕩電路中電感器或電容器的參數(shù)值來(lái) 進(jìn)行調(diào)節(jié)。當(dāng)時(shí)人們對(duì)電子管振蕩電路開展了大量的研究，今天仍在沿用的Hartley,Colpitts，Clapp，Armstrong，Pierce等經(jīng)典振蕩電路結(jié)構(gòu)，就是當(dāng)時(shí)的研究成果。上世紀(jì)中葉，晶體管問(wèn)世并很快取代電子管成為振蕩電路的有源器件。特別是變?nèi)?二極管的應(yīng)用對(duì)VCO的發(fā)展具有重要意義。變?nèi)荻O管的電容隨外加電壓的改變而變 化，用變?nèi)荻O管作壓控

4、器件，改變其控制電壓就可實(shí)現(xiàn) VCO振蕩頻率的調(diào)節(jié)。這樣， 晶體管、變?nèi)荻O管和其他無(wú)源元件就構(gòu)成了分立式的晶體管VCO。這種晶體管VCO實(shí)現(xiàn)了振蕩頻率的電子調(diào)諧，這是變?nèi)荻O管對(duì) VCO發(fā)展的重大貢獻(xiàn)。與電子管 VCO 相比較，晶體管VCO具有電子調(diào)諧、體積小、成本低、功耗小、質(zhì)量好、調(diào)頻范圍設(shè) 置簡(jiǎn)便等優(yōu)點(diǎn)。晶體管VCO的發(fā)展也是是電視技術(shù)能在當(dāng)時(shí)迅速推廣的重要原因。I960 年至1980年，晶體管VCO被電子系統(tǒng)設(shè)計(jì)所廣泛采用。到了 1980年，情況發(fā)生了變 化，混合集成的VCO組件和單片集成的VCO IC出現(xiàn)了。這兩種新技術(shù)對(duì) VC0的發(fā)展 產(chǎn)生了重要的影響。VCO從此就開始步入現(xiàn)代V

5、CO技術(shù)的發(fā)展時(shí)期。各種 VCO技術(shù) 的壽命期與時(shí)間的關(guān)系示于圖I。該圖簡(jiǎn)要地說(shuō)明了 VCO技術(shù)在過(guò)去80多年里的發(fā)展 歷程。圖1各種VCO技術(shù)壽命期變?nèi)荻O管、電容器、電感器等元器件的小型化為制造 VCO組件創(chuàng)造了條件。VCO組件是一種混合集成電路器件，具有封裝和外引線。雖然分立元件的晶體管VCO具有按用戶要求設(shè)計(jì)工作頻率和調(diào)諧范圍的靈活性，但一般在生產(chǎn)中都需要耗費(fèi)大量的 人工對(duì)確定頻率的元件進(jìn)行調(diào)試， 以消除元件誤差對(duì)頻率的影響。 此外，分立元件VCO需要良好的屏蔽，其尺寸也比較大。分立元件的 VCO已不能完全滿足現(xiàn)代無(wú)線電子系統(tǒng)發(fā)展的要求。20世紀(jì)80年代末、90年代初，移動(dòng)電話迅速發(fā)展

6、，對(duì)帶封裝的振蕩器組件的需求 也日益增長(zhǎng)。這為VCO組件的發(fā)展提供了難得的市場(chǎng)機(jī)遇。隨著新型無(wú)線應(yīng)用領(lǐng)域的 不斷發(fā)展，各VCO組件廠商開發(fā)了適合不同應(yīng)用領(lǐng)域所需頻率的產(chǎn)品。由于表面安裝 元件的不斷小型化（1206, 0805, 0603, 0402和0201）,新開發(fā)的VCO組件的尺寸也越 來(lái)越小，成本也越來(lái)越低。圖2說(shuō)明了現(xiàn)代商用VCO組件尺寸隨時(shí)間減小的變化情況。 目前，VCO組件達(dá)到了新的水平，其體積已減小到4 mnrK5mrK 2mm，大批量供貨VCO 的銷售單價(jià)已降至1美元左右。VCO組件在15年中其尺寸急劇減小，滿足了蜂窩電話 等新型無(wú)線移動(dòng)裝置對(duì)小型化的要求。陽(yáng)笳1990

7、5;翻厲年薪VCO組件體積變化過(guò)程圖 220世紀(jì)90年代末期，出現(xiàn)了一種尺寸更小、成本更低的VCO技術(shù)，這就是單片集成VCO技術(shù)。單片集成VCO是一種半導(dǎo)體集成電路器件，其全部電路元件均集成在 同一芯片上。這種器件像 VCO組件一樣，是一個(gè)完整的 VCO，具有封裝和外引線。首 批單片集成VCO采用2英寸GaAs IC工藝和單片微波集成電路（MMIC）技術(shù)制造，是為 衛(wèi)星接收機(jī)和雷達(dá)系統(tǒng)研制的。其工作頻率高達(dá)數(shù)GHz，但成本高昂。大多數(shù)早期單片 GaAs VCO的研究工作都是針對(duì)軍事應(yīng)用展開的，很少涉及民用領(lǐng)域。在20世紀(jì)80年代, Si-IC技術(shù)還是一種低頻技術(shù)，不能為單片集成 VCO提供上千

8、兆赫茲的工作頻率和 所需的帶寬。經(jīng)過(guò)研究與開發(fā)，1990年Si-IC技術(shù)在高頻化和無(wú)源元件集成方面獲得重大進(jìn) 展，開發(fā)成功工作頻率很高的晶體管、變?nèi)荻O管和單片集成的高 Q值電感器與高頻電 容器。這為高頻硅單片集成 VCO的研究與開發(fā)奠定了技術(shù)基礎(chǔ)。無(wú)線移動(dòng)通信系統(tǒng)的 發(fā)展，要求大批量提供成本低、體積小、工作在 8002500MHz頻段的VCO。人們?yōu)?此開展了大量的研究與開發(fā)工作。1992年，美國(guó)California大學(xué)首先報(bào)道了硅單片VCO IC的研究成果。其后，對(duì)硅單片VCO IC的研究進(jìn)入繁榮期，米用不同技術(shù)方案的硅單 片VCO IC相續(xù)問(wèn)世。硅單片VCO IC由高頻雙極晶體管IC技術(shù)

9、和SiCMOS-IC技術(shù)研制而成。在硅單片 VCO IC的研制過(guò)程中，學(xué)術(shù)研究機(jī)構(gòu)通常采用獲得廣泛應(yīng)用的 SiCMOS-IC技術(shù)，而工 業(yè)界則采用RFIC專用的BiCMOS技術(shù)。硅單片集成VCO體積更小、成本更低并適合 大批量生產(chǎn)的產(chǎn)品，而且可以采用 RF收發(fā)前端的工藝技術(shù)進(jìn)行制造。這表明，VCO可 以與混頻器、低噪聲放大器、鎖相環(huán)等其他 RF收發(fā)前端的功能電路模塊實(shí)現(xiàn)集成。正 是由于VCO IC具備這些潛在的優(yōu)勢(shì)，盡管早期產(chǎn)品性能欠佳，但人們對(duì)它的研究工作 一直沒(méi)有停頓。通過(guò)不斷改進(jìn)，其產(chǎn)品已廣泛應(yīng)用于無(wú)繩電話、藍(lán)牙裝置、WLAN、GPS、 DBS等無(wú)線裝置與系統(tǒng)之中。表1列出了一些單片集成

10、VCO的應(yīng)用實(shí)例。戶期唱號(hào)/MReM21JJ -1 'OA1H/ ISM 4-MAX"加舁4HJ 14GHj ISM l z1 AX2754114S 13SOMiuimM AXUH3175MuirnesM X X集訓(xùn)帥J 忻HMM oi1KIE Uh WLASfRF畑g叫卜b 1用電lASA'-MLI24(K> 1500PhblipxW2.11B W-LANBtwCwlA If-TRFTl函AR3tl磁 1h vyi.a»表1含有單片集成VCC的商用RFIC實(shí)例目前，單片集成VCO還不能用于對(duì)相位噪聲要求很高的應(yīng)用領(lǐng)域。 像GSM、CDMA 等具有高數(shù)

11、據(jù)速率的移動(dòng)電話系統(tǒng)，還只能使用 VCO組件。2.2 VCO技術(shù)的發(fā)展趨勢(shì)今后，VCO技術(shù)的研究與開發(fā)工作將繼續(xù)圍繞 VCO組件和單片集成VCO展開。 但是，全集成單片VCO技術(shù)是研究工作的重點(diǎn)，也是未來(lái)VCO技的發(fā)展方向?yàn)榱诉m應(yīng) 現(xiàn)代無(wú)線系統(tǒng)發(fā)展的要求，VCO組件不斷向小型、高頻、寬帶、高輸出化和特性多樣 化方向發(fā)展。將采用新的超小型元件和更先進(jìn)的薄膜技術(shù)與表面安裝技術(shù)，繼續(xù)推進(jìn) VCO組件封裝的微型化和表面安裝化。通過(guò)晶體管的改進(jìn)及振蕩電路的開發(fā)，解決好 小型化帶來(lái)的諧振器Q值降低的問(wèn)題和低功耗引起的特性劣化問(wèn)題。第四代移動(dòng)電話以 及其他工作在微波頻段高端的無(wú)線系統(tǒng)需要 VCO組件進(jìn)一步提

12、高工作頻率，實(shí)現(xiàn)VCO 組件高頻化。開發(fā)工作頻率更高的微波 VCO組件是未來(lái)十分重要的研究課題。SiGe BiCMOS等RF IC基礎(chǔ)工藝技術(shù)正在不斷發(fā)展與進(jìn)步。半導(dǎo)體工藝制造有源器 件與無(wú)源器件將具有更好的性能。現(xiàn)在，即使用 Si工藝技術(shù)，也可制得 超過(guò)50GHZ 的晶體管和高Q值，大電容變比，低串聯(lián)電阻的優(yōu)質(zhì)便容二極管。這類工藝技術(shù)還具有 襯底損耗低，金屬化層厚，器件寄生元件少，工作頻率高，工作電流小的單片集成VCO。現(xiàn)代無(wú)線系統(tǒng)，尤其是現(xiàn)代無(wú)線移動(dòng)通信系統(tǒng)，不僅要求VCO自身小型化和低成本化，而且希望VCO能同頻率合成器與收發(fā)機(jī)的其他單元電路進(jìn)行單片集成，以達(dá)到 減少整機(jī)體積和成本的目的

13、。此外，單片集成 VCO的設(shè)計(jì)理論也在深化，設(shè)計(jì)技術(shù)也 越來(lái)越先進(jìn)。差分放大器，幅度控制，二次諧波抑制器，IC耦合變壓器，復(fù)合振蕩器，高頻結(jié)構(gòu)設(shè)計(jì)等技術(shù)正不斷被納入單片集成 VCO的設(shè)計(jì)之中。利用單片集成VCO技術(shù) 把優(yōu)質(zhì)VCO同收發(fā)機(jī)電路集成在一起的新產(chǎn)品不斷問(wèn)世。 例如在WLAN和藍(lán)牙裝置中， 最新的收發(fā)機(jī)就把高質(zhì)量的 VCO同RF收發(fā)前端IC集成在一起，使其尺寸大大減 小。 WLAN系統(tǒng)（2.4GHZ 802.11b型和5GHZ 802.11a型）要求VCO具有很低的相位 噪聲。由于RF IC VCO技術(shù)的不斷發(fā)展，衛(wèi)星接收機(jī)，CATV機(jī)頂盒，無(wú)線數(shù)據(jù)裝置，無(wú)繩電話，移動(dòng)電話等商用 RF

14、系統(tǒng)與裝置越來(lái)越多地采用集成化頻率源。顯然，在大規(guī)模商業(yè)應(yīng)用領(lǐng)域中，單片集成VCO占有的市場(chǎng)份額將不斷增大，而分立元件VCO和 VCO組件占有市場(chǎng)將逐步減小。單片集成VCO在大規(guī)模商用無(wú)線系統(tǒng)中占主導(dǎo)地位的 時(shí)代很快就會(huì)到來(lái)。VCO技術(shù)已經(jīng)實(shí)現(xiàn)了從笨重的電電子管 VCO電路到面積小于1平 方毫米Si IC的跨越。3. 總結(jié)VCO是頻率源的關(guān)鍵器件，已廣泛應(yīng)用于各種電子系統(tǒng)之中。VCO的性能對(duì)電子系統(tǒng)有決定性的影響?，F(xiàn)代無(wú)線移動(dòng)通信系統(tǒng)的發(fā)展促進(jìn)VCO高頻化，形成了新一代微波VCO。VCO組件和單片集成VCO是微波VCO的主要結(jié)構(gòu)形式，是目前無(wú)線系統(tǒng) 采用的主流產(chǎn)品。雖然，在總體性能水平方面，單

15、片集成VCO目前還不如VCO組件好， 但它具有集成優(yōu)勢(shì)，仍然是VCO未來(lái)發(fā)展的方向。在RF IC工藝技術(shù)中，SiGe BiCMOS 技術(shù)是單片集成VCO最有前途的制造技術(shù)。來(lái)源于：ISO/IEC JTC1/SC29/WG1 (ITU-SG8) N2058, "JPEG2000 is now an In ternatio nalSta ndard", 9 March 2001附：英文原文voltage con trolled oscillator1 PrefaceVoltage con trolled oscillator ( voltage-co ntrolled osci

16、llator, VCO ) is a kind of voltage in put to con trol the oscillati on freque ncy of the oscillat ing circuit, is a modern radio com muni cati on system is an importa nt part of task 1 2. In the in tegrated circuit to the smaller size, less power consumption, higher frequency, lower price trends, ap

17、plication sta ndard process desig n and producti on of high performa nee voltage con trolled oscillator RF integrated circuit is an important subject in the. The ring oscillator is easy to be integrated, the adjustable freque ncy ran ge, but better performa nee tha n LC oscillator phase no ise. LC V

18、CO requireme nts quality factors of passive devices, n eed the on-chip in ductor and varactor devices to in tegrate 3.Oscillator since its birth has bee n in com muni catio n, electr oni cs, aerospacea nd other fields of medicine navigation plays an important role, has a wide range of uses. In radio

19、 tech no logy in the in itial stage of developme nt, it is in the tran smitter to gen erate high frequency carrier wave voltage, the heterodyne receiver is used as a local oscillator, a transmitting and receiving equipment basic components. With the rapid development of electro nic tech no logy, the

20、 oscillator uses more and more widely, for example in radio measurement instruments, it produces various frequency sinusoidal signal voltage: in the heat process ing, heat treatme nt, ultras onic mach ining and some medical equipme nt, it produces high power high frequency electric power of load hea

21、ting; some electrical equipment oscillator. The con tactless switch con trol; electr onic clock and electr onic watches using frequency stability high oscillation circuit as a timing component. Especially in the com muni cati on system circuit, a voltage con trolled oscillator ( VCO ) is one of the

22、key parts, especially in the phase-locked loop circuit, clock recovery circuit and freque ncy syn thesizer circuit is Chon gzho ngzhi is heavy, it is no exaggerati on to say in electr onic com muni cati on tech no logy, VCO almost with the curre nt source and the operati onal amplifier has the same

23、importa nt positi on.2.Theme2.1The development of 1.VC0 processAt the beg inning of the last cen tury, Armstro ng inven ted electro nic oscillator, the improved Hartley circuit design and the successful development of VCO tube. Electronic tube VCO oscillatio n freque ncy is cha nged by the oscillati

24、 on circuit in ductor or capacitor parameter values to adjust. At that time the people to the electro nic tube oscillati on circuit to carry out a great deal of research, today is still in use in the Hartley, Colpitts, Clapp, Armstro ng, Pierce and other classical oscillati ng circuit structure, was

25、 the research results.The middle of the last century, the first transistor and quickly replace the tube becomes oscillatory circuit of the active device. In particular the varactor applications on the VCO has importa nt sig nifica nee to the developme nt of. Variable capacita ncediode capacita nceas

26、 a fun cti on of the applied voltage cha nge, using varactor diode voltage con trolled device, cha nge the con trol voltage can be achieved VCO oscillati on freque ncy regulati on .In this way, the tran sistor, varactor diodes and other passive comp onents form the vertical tran sistor VCO. This tra

27、nsistor VCO implementation of the oscillation frequency of the electronic tuning varactor diode, it is the significant contribution of VCO development. Electronic tube with VCO compared to VCO, transistor with electronic tuning, small volume, low cost, small power con sumptio n, good quality, easy F

28、M range sett ing. Tran sistor VCO is the developme nt of televisi on tech no logy at that time rapid promotio n of importa nt reas ons. From 1960 to1980, VCO transistors are widely used in electronic system design. By 1980, the situation has cha nged, hybrid in tegrated VCO module and mono lithic in

29、 tegrated VCO IC appeared. These two kinds of new tech no logy to the developme nt of VCOhas produced importa nt in flue nee. VCO has started to en ter the moder n VCO tech no logy developme nt period. A variety of VCO tech no logy life cycle and the time relati on show n in Figure L. The graph, a b

30、rief descriptio n of the VCO tech no logy in the past 80 years developme nt course.Fig 1 VCO technology life cycl eVariable capacita nee diodes, capacitors, in ductors and other comp onents of the miniaturization for the manufacture of VCO components to create the conditions. VCO component is a hybr

31、id integrated circuit device, a package and the outer lead wires. Although discrete transistor VCO according to user requirements with the design and operating freque ncy tuning range and flexibility, but gen erally in the producti on n eed to con sume a large amount of artificial to determ ine the

32、freque ncy comp onents for debuggi ng, in order to eliminate the element error on the frequency effect. In addition, discrete components VCO needs good shielding, its size is relatively large. Discrete element VCO can not satisfy the requireme nts of the developme nt of moder n wireless electro nic

33、system.rn'175mm196eiui>The VCO comp onent volume cha nge process of2v-x3_wNin etee n nin ties stage, the emerge nee of a smaller size, lower cost of the VCO techno logy, which is mono lithically in tegrated VCO tech no logy. Mono lithic in tegrated VCO is a semic on ductor in tegrated circuit

34、 device, all the circuit comp onents are in tegrated on the same chip. This device like the VCO module, is a complete VCO, with packaging and outer lead. The first batch of mono lithic in tegrated VCO uses 2 in ches of GaAs IC tech no logy and the mon olithic microwave in tegrated circuit ( MMIC ) m

35、anu facturi ng tech no logy, is for the satellite receiver and radar system. Its high working frequency of GHz, but the high cost. Most of the early single GaAs VCO 's research work is aimed at the military application of un fold in g, rarely invo lved in civil field. I n the nin etee n eighties

36、, Si-IC tech no logy is a ki nd of low freque ncy tech no logy, not for the mon olithic in tegrated VCO with Giga Hertz freque ncy and ban dwidth required for.Through research and developme nt, in 1990 the Si-IC tech nique in high freque ncy and passive comp onents in tegrati on has achieved sig nif

37、ica nt progress, the successful developme nt of the work with very high frequency transistor, variable capacitance diode and monolithic in tegratio n of high Q value of the in ductor and the high freque ncy capacitor. The high frequency silic on mono lithic in tegrated VCO research and developme nt

38、laid a tech no logical basis. Wireless mobile com muni cati on system developme nt, requireme nts in large qua ntities to provide low cost, small volume, work in the 800 2500MHz ba nd VCO. It carried out a great deal of research and developme nt work. I n 1992, America n California Un iversity was f

39、irst reported by Silicon Monolithic VCO IC research. Thereafter, the silicon monolithic VCOIC research to enter prosperous period, using different techniques for Silicon Monolithic VCO IC con ti nued publicati on.Silic on Mono lithic VCO IC by high freque ncy bipolar tran sistor IC tech no logy and

40、SiCMOS-IC tech nology developed by. In Silico n Mono lithic VCO IC developme nt process, academic and research in stitutio ns usually adopt the widely used SiCMOS-IC tech no logy, while the in dustry is using RFIC special BiCMOS tech no logy. Silic on mono lithic in tegrated VCO smaller volume, lowe

41、r cost and suitable for mass product ion of products, but also can be used to RF fron t-e nd tech no logy manu facturi ng. This shows, VCO can be associated with a mixer, low noise amplifier, phase locked loop and other RF front-end circuit function module to realize the integrated. It is because th

42、e VCO IC with these potential advantages, although early products of poor performanee, but the research work has not stopped. Through con ti nu ous improveme nt, its products have bee n widely used in cordless phon es, Bluetooth devices, WLAN, GPS, DBS and other wireless devices and systems. Table 1

43、 lists some mono lithic in tegrated VCO applicati on examples 4.L Z VMl I*| 嚴(yán)*-*1 WtAA芻、X 二血-Z±-4 1杜miISM MJ%M工于鼻 * *1 Ml 衛(wèi)盂電序v - z審*H M 氣 l 尸-惻*M氏奚X IWJSJ1虹A IC5 lifliitr IS*>1<K JMM i負(fù)彳 * ik « irarlKO3*. 1*" L axH |h" |.« Mi 40 3： ”>Oi3S' n X, 1-V V «* 絢I

44、 3LL113SA.H：斗3 上-2400 jMk.S|Pi l-e *4lM >T 11弓< 4%ARS It 11 la1 a-AMTable 1 contains mono lithic in tegrated VCO RFIC commercial examplesAt prese nt, mono lithic in tegrated VCO also cannot be used for phase no ise of dema nding applications. Like GSM, CDMA has a high data rate mobile phone sy

45、stem, also can use VCO comp onents2.2The development trend of 2.VCO TechnologyIn the future, VCO tech no logy research and developme nt work will continue to focus onVCO components and monolithic integrated VCO expansion. However, the monolithic in tegrated VCO tech no logy is the research focus, bu

46、t also the future of VCO tech no logy developme nt directi on in order to adapt to moder n wireless system developme nt requireme nts, VCO components to small, high frequency, wide band, high output and characteristic development. We will adopt a new miniature components and more advaneed thin film

47、tech no logy and surface mount tech no logy, con ti nue to promote the VCO package miniaturization and mounted on the surface of. The pass transistor oscillation circuit improveme nt and developme nt, solve good mini aturizati on brings res on ator Q reduces problems and low power consumption caused

48、 by deterioration of a problem. Fourth gen erati on mobile phones and other work in the microwave band high-e nd wireless systems n eed to further improve the worki ng freque ncy of the VCO comp onent, VCO comp onent high frequency. Development of frequency higher microwave VCO components are very i

49、mportant research topic in the future.SiGe BiCMOS RF IC basic tech no logy is evo Iving with progress. Semic on ductor manu facturi ng tech no logy of active devices and passive comp onents will have better performa nee. Now, using the Si tech no logy, also can be used for more tha n 50GHZ transistors and high Q value, high capacitanceratio, low series resistanceand capacitance diode quality. This tech no logy also has a substrate of low loss, metal layer thick ness of parasitic element, device is little, high working frequen