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LayerLayer9k2000AnnualReportofCAMD,ColumnswithextremeaspectDiameter:7m,Height:570m,Aspectratio:W.Ehrfeldetal.,Microsystemtechnologies,5,105-SelectionofMaterialscurrentlyusedforelectroformingofmicrostructureTestandTestandMouldNi,Ni-Ni-W,Co-X-rayNi-SiO2,Ni-Al2O3,Diamond,Ni-ActuatorNi-SensorNi-SacrificialCu,FunctionalAg,Au,Cu,Cr,ElectricalAu,SlideCu-Ni-Ag,Sm-SEMpicturesofmicrostructureSEMpicturesofmicrostructurePartsofaplanetaryMaterial:Ni- Material:Ni-W.Ehrfeldetal.,Microsystemtechnologies,5,105-Examplesforhotembossingofopticaly-splittersMouldinsertforanarraymultimodesplitters(Ni)

W.Ehrfeldetal.,Microsystemtechnologies,5,105-MicromixerfabricatedbyhotMaterial:W.Ehrfeldetal.,Microsystemtechnologies,5,105-Three-dimensional Intersectionofthreeholes,Material:positivetone

Material:-CeramicsgeneratedbypyrolysisofW.Ehrfeldetal.,Microsystemtechnologies,5,105-FlowchannelsofstaticmicromixersformicroreactiontechnologyMaterial:Ni Material:Ag W.Ehrfeldetal.,Microsystemtechnologies,5,105-活動部件制（對準（釋放活動部件

微流量230 200 10傾斜和Single Mask Resist SubstrateDevelopedresist傾斜和旋 SensorsandActuatorsA111(2004)復雜圖形結(jié)構(gòu)（三維圖形TheRadiationSpectraofWigglerbeforeandafterfilters100umBe200umBe100umBe200umBe1000umPowerPower1E- WavelengthExposuretimeanddoseDoseDoseExposure 3 1 Resist實驗站主主要技術參0.20.730×80工作模 Theexposuredoseisolinesindifferentlithographydepths 9875 105

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0-0.25-0.2-0.15-0.1-0.0500.050.10.150.2Variation VariationTheeffectofphotoneletronsproducedbySisubstrate 1mmC CA:線寬10m，高度 B:線寬20m，高度 C:線寬40m，高度 EDEE:線寬10m的十字糟，高度 深度同步輻射光

（m寬(m523GeometryofatiltilluminatedX-ray3D光子晶體微結(jié)構(gòu)加工方3D光子晶體微結(jié)C:線寬為40m的Ni微結(jié)構(gòu)；D:線寬為20mNi微結(jié)構(gòu)誤差誤差<5不同線寬微結(jié)構(gòu)電鑄時傳質(zhì)的定性模微結(jié)構(gòu)電鑄時傳質(zhì)ImprovedplatingImprovedplatingRegularplating

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SPIE脫模過程造成的模 品典型缺陷，（a）邊緣拉起，（b）邊緣拔MEMS的尺寸效應及摩擦特32321212H1212K0.75'1111'

1/2K1/2r3/ E2泊松比表面能33000.41.7FH1.5Kr假設接觸半徑在0.1到0.01m之間，在隨后的脫模0.45110<30MPa)，因此該粘著結(jié)點被剪切產(chǎn)生滑YuhuaGuo,etal.MicrosystemTechnology,13,411-

Ni-Si3N4-Pull-(PMMA-K,針直徑:20)Frictionforcevs.appliedloadfortipsslidingonthePMMA(Mw:350K)YuhuaGuo,etal.J.Micromech.Microeng.17,9-鎳模具中的粘著力及其摩擦的脫模模 Max:13~28.7(c) YuhuaGuo,etal.J.Micromech.Microeng.17,9-

Max: (b)Max:4.6~10.5(c)

Max:YuhuaGuo,etal.J.Micromech.Microeng.17,9- 1 脫模分離的關鍵瞬間，極大應力很可能造成邊緣的2 YuhuaGuo,etal.J.Micromech.Microeng.17,9-降低界面能的材表面材表面(R.W.Jaszewskietal.(Karlsruhe,中被禁用局限性：前者PTFE易于脫落中被禁用復合材料模

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2 熱收縮thermal=f(o,,孤立結(jié)構(gòu)的熱應力計算(bydd=800dd=800

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