一步一步精通單端反激式開(kāi)關(guān)電源設(shè)計(jì)計(jì)算工具V1.8

"反激式開(kāi)關(guān)電源電子設(shè)計(jì)表格V1.8

表格中灰色為允許數(shù)據(jù)輸入，黃色為中間變量，藍(lán)色為輸出變量。

當(dāng)在其中輸入數(shù)據(jù)時(shí)，表格會(huì)自動(dòng)計(jì)算相關(guān)參數(shù)。

歡迎大家在論壇中提出寶貴意見(jiàn)或使用情況。________________jianjun8410",,,,,,,,,

型號(hào):,單端反激式開(kāi)關(guān)電源,,,編寫(xiě):,jianjun8410,,日期:,20150615,

序號(hào),參數(shù),計(jì)算數(shù)據(jù),,,,,單位,參數(shù)說(shuō)明,設(shè)計(jì)警告

一、設(shè)計(jì)需求部分,,,,,,,,,

1,VACMIN,195,,,,,V,交流輸入電壓最小值,

2,VACMAX,265,,,,,V,交流輸入電壓最大值,

3,fL,50,,,,,Hz,電網(wǎng)頻率,

4,fs,132,,,,,kHz,開(kāi)關(guān)頻率,

5,,,Mainout,Out2,Out3,Out4,,,

,UO,,32,0,0,0,V,直流輸出電壓(輸出電壓>1v),

,IO,,1.9,0,0,0,A,次級(jí)直流輸出電流,

,PO,60.8,60.8,0,0,0,W,輸出功率,

6,η,85,,,,,%,電源效率,

7,Z,0.5,,,,,,損耗分配系數(shù),

8,UFB,12,,,,,V,反饋電壓，所選MOS管芯片推薦值,

9,SI,,0.2,,,,±%,負(fù)載調(diào)整率（±10%，±2.5%，±1%，±0.2%）,

,反饋電路類型,,光耦/TL431,,,,,反饋電路類型（初級(jí)/基本、初級(jí)/增強(qiáng)、光耦/穩(wěn)壓管、光耦/TL431）,

10,CIN(理論值),60.8,,,,,UF,理論需要的輸入濾波電容大小,

11,CIN(實(shí)取值),100,,,,,UF,實(shí)取的輸入濾波電容大小,

12,VMIN,254.1,,,,,V,"直流輸入電壓最小值,tc取1.98ms",

13,VMAX,374.8,,,,,V,直流輸入電壓最大值,

14,VOR,110,,,,,V,初級(jí)繞組的感應(yīng)電壓，即輸出反射電壓,

15,KP,1,,,,,,初級(jí)繞組脈動(dòng)電流IR與峰值電流IP的比例系數(shù),

16,DMAX,30.7,,,,,%,最大占空比(VMIN時(shí)),

17,IP,1.832,,,,,A,初級(jí)繞組峰峰值電流,

18,IAVG,0.281,,,,,A,初級(jí)繞組平均值電流,

19,IRMS,0.586,,,,,A,初級(jí)繞組有效值電流,

20,IR,1.832,,,,,A,初級(jí)繞組脈動(dòng)值電流IR＝IP*KP,

21,儲(chǔ)能方程式計(jì)算LPMIN,298.8,,,,,UH,儲(chǔ)能方程式計(jì)算的初級(jí)繞組電感量,

22,脈動(dòng)方程式計(jì)算LPMIN(輔助),315.1,,,,,UH,脈動(dòng)方程式計(jì)算的初級(jí)繞組電感量,

23,實(shí)取電感量LP,299,,,,,UH,實(shí)取初級(jí)繞組電感量LP,

24,估計(jì)初級(jí)漏感L_LKG,7.48,,,,,UH,估計(jì)初級(jí)漏感L_LKG=LP*2.5%,

二、關(guān)鍵元器件選擇,,,,,,,,,

,MOS管芯片選擇,,,,,,,,

25,BVDSS,647.8,,,,,V,MOS芯片的BVDSS要求：BVDSS=VMAX+1.4*1.5*VOR+20V(VDIO)+22V(MARGIN),

26,PO(MOS),76.0,,,,,W,MOS管芯片設(shè)計(jì)功率要求：PO(MOS)=PO/0.8,

27,BVDSS(選定),700,,,,,V,選定MOS管芯片BVDSS,

28,PO(選定),125,,,,,W,選定MOS管芯片推薦設(shè)計(jì)功率,

29,VDS(選定),6.21,,,,,V,選定MOS管導(dǎo)通電壓,

30,RDS(ON)(選定),5,,,,,Ω,選定MOS芯片導(dǎo)通電阻,

31,ILIMIT(選定),2.70,,,,,A,選定MOS芯片缺省限流點(diǎn)，也即過(guò)流保護(hù)點(diǎn),

32,BP,0.42,,,,,T,選定MOS管芯片推薦的最大峰值磁通密度,

33,CXT(選定),10.00,,,,,pF,選定MOS管芯片漏極外部結(jié)電容Coss,

34,TJ(選定),125,,,,,°C,選定MOS管芯片的最高管芯允許結(jié)溫，一般考慮芯片（TJ-25）度,

35,RJC(選定),2.00,,,,,°C/W,選定MOS管芯片管芯到器件殼的熱阻,

36,RJA(選定),80.00,,,,,°C/W,選定MOS管芯片管芯到環(huán)境的熱阻,

37,ILIMIT(MIN),2.511,,,,,A,選定的MOS芯片電路工作最低限流點(diǎn),

38,ILIMIT(MAX),2.889,,,,,A,選定的MOS芯片電路工作最高限流點(diǎn),

,MOS選擇正確,,,,,,,檢測(cè)MOS管選擇的正確性,

,MOS管散熱片選擇,,,,,,,,

步驟12_計(jì)算功率開(kāi)關(guān)管熱阻選擇散熱片驗(yàn)證MOS芯片選擇的正確性,,,,,,,,,

39,TA,85,,,,,°C,MOS管芯片實(shí)際最高工作環(huán)境溫度,

40,PIR,1.72,,,,,W,MOS管芯片的導(dǎo)通損耗(100℃高溫),

41,PCXT,0.16,,,,,W,MOS管芯片的開(kāi)關(guān)損耗,

42,PD,2.27,,,,,W,MOS管芯片的總損耗PD=PIR+PCXT,

43,RJA,17.59,,,,,°C/W,RJA表示允許的總熱阻,

,需要外加散熱片,,,,,,,驗(yàn)證是否需要外加散熱片,

44,RCS,0.2,,,,,°C/W,MOS管芯片到散熱片的熱阻，與器件封裝及接觸方式有關(guān),

45,RSA,15.39,,,,,°C/W,需要外加的散熱片到環(huán)境的熱阻,

,散熱片形狀和面積,參考：/zh-hans/product-group/standard,,,,,,,

三、磁芯及骨架選擇,,,,,,,,,

46,磁芯材料類型,PC44,,,,,/,,

47,μi,2400,,,,,H/m,磁芯的初始磁導(dǎo)率，誤差范圍±25%,

48,Pvc,300,,,,,KW/m3,"磁芯損耗@100KHZ,100℃，B=200mT",

49,Bs,390,,,,,mT,"磁芯的飽和磁通密度@100℃,Tc=215℃",

50,Br,60,,,,,mT,"磁芯的剩余磁通密度@100℃,Tc=215℃",

51,△BMAX,0.33,,,,,T,磁芯的最大交流磁通密度△BMAX=Bs-Br,

52,BM,0.23,,,,,T,磁芯的最大工作磁通密度BM=(0.6~0.7)*△BMAX,

53,BAC,0.12,,,,,T,磁芯的交流磁通密度,

54,KW,0.35,,,,,/,窗口面積的利用系數(shù)一般取KW=0．2～0．5,

55,J,400,,,,,A/cm2,電流密度一般取J=200～600,

56,面積乘機(jī)法計(jì)算Ap,0.44,,,,,cm4,基于AP法選擇磁芯,

57,功率估算法計(jì)算Ae(輔助),63.43,,,,,mm2,由估算公式選擇適合的磁芯,

58,磁芯,ER28/34,,,,,/,選定的鐵氧體磁芯型號(hào),

59,Ap,1.2047,,,,,cm4,選定磁芯的有效截面積與窗口面積的乘積,

60,Ae,81.40,,,,,mm2,選定磁芯的有效橫截面積,

61,AW,148.00,,,,,mm2,選定磁芯的窗口橫截面積，也稱卷線截面積,

62,AL,2520.00,,,,,nH/N2,選定磁芯無(wú)氣隙時(shí)的等效電感,

63,Le,75.50,,,,,mm,選定磁芯的有效磁路長(zhǎng)度,

64,Ve,6143.00,,,,,mm3,選定磁芯有效磁芯體積,

65,PT,228.0,,,,,W,選定磁芯可承載的市在功率（典型值）,

66,D,9.9,,,,,mm,選定磁芯中柱直徑大小,

67,BW,21.8,,,,,mm,選定骨架幅寬,

68,h,4.5,,,,,mm,選定骨架允許繞線深度,

,磁芯選擇正確,,,,,,,,

四、變壓器設(shè)計(jì),,,,,,,,,

69,UD,,0.5,0,0,0,V,次級(jí)繞組肖特基整流管正向壓降,

70,UDB,0.7,,,,,V,反饋電路中高速開(kāi)關(guān)整流管正向壓降,

71,n,計(jì)算數(shù)據(jù),3.385,0.000,0.000,0.000,,初次級(jí)匝數(shù)比,

72,NP(計(jì)算數(shù)據(jù)),31.5,,,,,匝,初級(jí)繞組匝數(shù),

,NP(實(shí)取),32,,,,,,,

73,NS,計(jì)算數(shù)據(jù),9.5,0.0,0.0,0.0,匝,次級(jí)繞組匝數(shù),

,,實(shí)取,9,0,0,0,,,

74,NB(計(jì)算數(shù)據(jù)),4,,,,,匝,反饋級(jí)繞組匝數(shù),

,NB(實(shí)取),4,,,,,,,

五、變壓器設(shè)定驗(yàn)證：最大工作磁通密度BM，磁芯氣隙LG，峰值磁通密度BP,,,,,,,,,

75,KI,1.0,,,,,,選定的MOS芯片的電流降低因數(shù)KI,

76,μO(píng),0.4π,,,,,uH/m,真空中的磁導(dǎo)率0.4πX10-6H/m,

77,μr,1860,,,,,H/m,磁芯不留間隙時(shí)的相對(duì)磁導(dǎo)率,

78,ALG,0.292,,,,,nH/N2,磁芯留間隙時(shí)的電感系數(shù),

79,Lg,0.310,,,,,mm,磁芯氣隙寬度,

80,BM,0.210,,,,,T,"錳鋅鐵氧體磁芯最大工作磁通密度驗(yàn)證值,建議(0.2<BM<0.3)",

81,BP,0.332,,,,,T,錳鋅鐵氧體磁芯最大峰值磁通密度驗(yàn)證值(BP=0.1～BP推薦值),

六、設(shè)定初級(jí)繞組的層數(shù)LP以及初級(jí)繞組圈數(shù)股數(shù)Pp,,,,,,,,,

82,Dfm,0.182,,,,,mm,趨膚效應(yīng)穿透深度,

83,Dm,0.364,,,,,mm,單股最大裸線線徑(避免趨膚效應(yīng))Dm=Dfm*2,

84,M,3.2,,,,,mm,安全邊距,

85,ODP(單股等效)MIN,0.275,,,,,mm,最大電流密度時(shí)需要的初級(jí)繞組導(dǎo)線等效單股最小裸直徑,

86,ODP(單股等效)MAX,0.477,,,,,mm,最小電流密度時(shí)需要的初級(jí)繞組導(dǎo)線等效單股最大裸直徑,

87,PPMIN(CMAMIN),1.0,,,,,股,最大電流密度時(shí)需要的初級(jí)繞組導(dǎo)線最小股數(shù)要求,

88,PPMIN(CMAMAX),2.0,,,,,股,最小電流密度時(shí)需要的初級(jí)繞組導(dǎo)線最小股數(shù)要求,

89,Pp,1,,,,,股,選定的初級(jí)繞組導(dǎo)線股數(shù),

90,OD(MIN)P,0.275,,,,,mm,需要的初級(jí)繞組單股導(dǎo)線的最小裸直徑,

91,OD(MAX)P,0.364,,,,,mm,需要的初級(jí)繞組單股導(dǎo)線的最大裸直徑,

92,OD(內(nèi))P,0.35,,,,,mm,選取初級(jí)繞組單股導(dǎo)線的裸直徑,

93,OD(外)P,0.377,,,,,mm,選取初級(jí)繞組單股導(dǎo)線的外徑大小,

94,LP,1.0,,,,,層,初級(jí)繞組層數(shù),

95,LP(選定),2,,,,,層,選定的初級(jí)繞組層數(shù),

96,CMAP,323,,,,,C.mils/A,電流密度(CMA＝200～600c.m/A),

七、設(shè)定次級(jí)繞組的層數(shù)LS以及初級(jí)繞組圈數(shù)股數(shù)PS,,,,,,,,,

97,ISP,,6.513,0.000,0.000,0.000,A,次級(jí)繞組峰值電流,

98,ISRMS,,3.129,0.000,0.000,0.000,A,次級(jí)繞組有效值電流,

99,ODS(單股等效)MIN,,0.636,0.000,0.000,0.000,mm,最大電流密度時(shí)需要的次級(jí)繞組導(dǎo)線等效單股最小裸直徑,

100,ODS(單股等效)MAX,,1.006,0.000,0.000,0.000,mm,最小電流密度時(shí)需要的次級(jí)繞組導(dǎo)線等效單股最大裸直徑,

101,PSMIN(CMAMIN),,4,0.0,0.0,0.0,股,最大電流密度時(shí)需要的次級(jí)繞組導(dǎo)線最小股數(shù)要求,

102,PSMIN(CMAMAX),,8,0.0,0.0,0.0,股,最小電流密度時(shí)需要的次級(jí)繞組導(dǎo)線最小股數(shù)要求,

103,PS,,4,0,0,0,股,選定的次級(jí)繞組導(dǎo)線股數(shù),

104,OD(MIN)S,,0.318,0.000,0.000,0.000,mm,需要的次級(jí)繞組單股導(dǎo)線的最小裸直徑,

105,OD(MAX)S,,0.364,0.000,0.000,0.000,mm,需要的次級(jí)繞組單股導(dǎo)線的最大裸直徑,

106,OD(內(nèi))S,,0.35,0,0,0,mm,選取次級(jí)繞組單股導(dǎo)線的裸直徑,

107,OD(外)S,,0.377,0,0,0,mm,選取次級(jí)繞組單股導(dǎo)線的外徑大小,

108,LS,,2.0,0.00,0.00,0.00,層,次級(jí)繞組層數(shù),

109,CMAS,,242,0,0,0,C.mils/A,電流密度(CMA＝200～500c.m/A),

八、選定反饋繞組的層數(shù)LB以及次級(jí)繞組圈數(shù)NB,,,,,,,,,

110,OD(MAX)B,0.364,,,,,mm,需要的輔助繞組單股導(dǎo)線的最大裸直徑,

111,OD(內(nèi))B,0.35,,,,,mm,選取反饋繞組單股導(dǎo)線的裸直徑,

112,OD(外)B,0.377,,,,,mm,選取反饋繞組單股導(dǎo)線的外徑大小,

113,PB,1,,,,,股,選定的反饋繞組導(dǎo)線股數(shù),

114,LB,1.0,,,,,層,反饋繞組層數(shù),

115,三層絕緣要求,1,,,,,,三層絕緣要求：1代表是；0代表否,

,可以繞制,,,,,,,檢測(cè)變壓器繞線能否容下,

九、其他器件選擇,,,,,,,,,

輸入整流橋的選擇,,,,,,,,,

116,UBRMIN,468,,,,,V,整流二極管反向峰值電壓要求UBR≥1.25*√2*VACMAX,

117,Id,0.43,,,,,A,整流二極管平均整流電流要求,

118,UBR(選定),600,,,,,,選定整流橋UBR,

119,Id(選定),1,,,,,,選定整流橋Id,

,整流橋選擇正確,,,,,,,檢測(cè)整流橋選擇的正確性,

次級(jí)繞組及反饋繞組整流管選擇,,,,,,,,,

120,PIVS(計(jì)算數(shù)據(jù)),,137,0,0,0,V,次級(jí)繞組整流管最高反向峰值電壓,

121,VRS(計(jì)算數(shù)據(jù)),,172,0,0,0,V,需要滿足的次級(jí)繞組整流管反向電壓額定值,

122,ID(計(jì)算數(shù)據(jù)),,6,0,0,0,A,需要滿足的次級(jí)繞組整流管直流電流額定值,

123,VRS(實(shí)取),,200,0,0,0,V,選定的次級(jí)繞組整流管最高反向峰值電壓,

124,ID(計(jì)算數(shù)據(jù)),,10,0,0,0,A,選定的次級(jí)繞組整流管直流電流額定值,

125,PIVB(計(jì)算數(shù)據(jù)),59,,,,,V,反饋繞組整流管最高反向峰值電壓,

126,VRB(計(jì)算數(shù)據(jù)),74,,,,,V,需要滿足的反饋繞組整流管反向電壓額定值,

127,VRB(實(shí)取),75,,,,,V,選定的反饋繞組整流管最高反向峰值電壓,

,次級(jí)繞組及反饋繞組整流管選擇正確,,,,,,,檢測(cè)次級(jí)繞組及反饋繞組整流管選擇的正確性,

輸出濾波電解電容的選擇,,,,,,,,,

128,VRIPPLE,,0.32,0.00,0.00,0.00,V,"設(shè)計(jì)需求中輸出開(kāi)關(guān)紋波電壓的最大值,一般取1%*VO",

129,IRIPPLE(計(jì)算數(shù)據(jù)),,2.487,0.00,0.00,0.00,A,輸出濾波電容上的紋波電流,

130,耐壓VC(計(jì)算數(shù)據(jù)),,40,0,0,0,V,輸出電容耐壓要求，一般取1.25*VO,

131,CMIN(計(jì)算數(shù)據(jù)),,47,0,0,0,UF,輸出電容容量最小值要求，Cmin=(ISP*DMAX)/(VRIPPLE*FS),

132,IRIPPLE(實(shí)取),,1.580,0.000,0.000,0.000,A,實(shí)際選取的輸出電容紋波電流大小,

133,電容個(gè)數(shù)(實(shí)取),,2,0,0,0,個(gè),實(shí)際選取的輸出電容個(gè)數(shù),

134,耐壓VC(實(shí)取),,50,0.00,0.00,0.00,V,實(shí)際選取的輸出電容耐壓大小,

135,容量C(實(shí)取),,220,0,0,0,UF,實(shí)際選取的輸出電容容量大小,

136,,,,,,,,檢測(cè)輸出濾波電解電容選擇的正確性,

,輸出濾波電容選擇正確,,,