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設(shè)計規(guī)則解析
以TSMC0.25m硅柵N阱CMOS工藝的部分設(shè)計規(guī)則為例哈工大微電子中心來逢昌一、幾點說明1.
MASKNAMES
(Layer)PW---DefinitionofP-Well.NW---DefinitionofN-Well.OD---Definitionofthinoxidefordevice,andinterconnection.PO---DefinitionofPoly-Si.PP---DefinitionofP+implantation.NP---DefinitionofN+implantation.CO---DefinitionofcontactwindowfromM1toODorPO.M1---Definitionof1stmetalforinterconnection.VIA1--Definitionofvia1holebetweenM2andM1.M2---Definitionof2ndmetalforinterconnection.CB---Definitionofbondingpad.2.
TerminologyDefinitionsforRegionN+OD:
ODcoveredwithNP.P+OD:
ODcoveredwithPP.ColdN-Well:
N-Wellconnectedtothemostpositivevoltage(Vdd).HotN-Well:
N-WellnotconnectedtothemostpositivevoltageHotN+diffusion:
allN+diffusionregionsoutsidetheN-Wellwhichhaveapotentialnotequaltothesubstratevoltage.HotP+diffusion:
allP+diffusionregionsinsidetheN-WellwhichhaveapotentialnotequaltotheN-Wellpotential.Colddiffusions:OutsideN-Well:
adiffusionwhichhasthepotentialthesameasthesubstrate.InsideN-Well:
adiffusionwhichhasthepotentialthesameastheN-Well.3.
TerminologyDefinitionsforRule
WIDTHSPACE:CLEARANCE:EXTENSION:OVERLAP:哈工大微電子中心來逢昌二、N-WellRuleNW.W.1MinimumdimensionofaNWregion
A1.2mNW.S.1MinimumspacebetweentowNWregionsB
2.0
m
withdifferentpotential
(includeNWresistor)NW.W.2MinimumdimensionofahotNWregion
A13.0m
(NWresistance)NW.S.2MinimumspacebetweentowNWregionsC
0.6
m
withthesamepotential
Mergeifspaceislessthan0.6mNWNWPWAAA1BC哈工大微電子中心來逢昌三、ThinOxideRule(activearea)OD.W.1MinimumwidthofanODregiontodefine
A0.3
m
thewidthofNMOS/PMOSOD.W.2MinimumwidthofanODregionfor
B0.3
m
interconnect(N+/orP+)
OD.S.1MinimumspacebetweentwoODregions
C0.4
m
(bothregionsareeitherinsideoroutsideaN-well)whichcanbeeitherN+toN+,P+toP+orN+toP+OD.C.1MinimumclearancefromNWedgetoaD0.15
m
N+
ODregionwhichisinsidetheNWOD.C.2MinimumclearancefromNWedgetoaN+
E0.6
mODregionwhichisoutsidetheNW(coldorhot)OD.C.3MinimumclearancefromNWedgetoaP+F0.6
mODregionwhichisinsideaNWOD.C.4MinimumclearancefromNWedgetoaP+G0.15
mODregion(forPWpickup)whichisoutsideaNWOD.C.5Minimumclearancefrompolyedgetothe
H0.32
medgeofbutteddiffusionODregionOD.S.2MinimumspaceofN+ODtoP+ODfor
I0
m
butteddiffusionP+N+N+N+P+N+P+POPOCBBN-WellP-WellP+P+(OD)FEACDGN+JIIJHButteddiffusionregionJOD.W.3AtleastonesegmentJoftheconsecutive
J0.5
m
N+/P+buttededgesofbutteddiffusionODis≥0.5um哈工大微電子中心來逢昌四、PolyRulePO.W.1MinimumwidthofaPOregionforA,B,C0.24
m
the
channellengthandinterconnect
(includepmosandnmos)PO.S.1MinimumspacebetweentwoPOregions
D,D10.4
m
onODarea(polygate)
PO.S.2MinimumspacebetweentwoPOregions
D20.36
m
onfieldoxideareaPO.C.1MinimumclearancefromanODregion
E0.14
mtoaPOonfieldoxidePO.C.2MinimumclearancefromaPOgateto
F0.4
m
arelatedODedgePO.O.1MinimumoverlapofaPOregionextendedG0.3
mintofieldoxide(endcap)PO.R.1Bentgateat90degreeangleisnotallowed*0.4
mPO.R.2MaximumlengthofPOonfieldoxideH50
mbetweentwocontactsorbetweenonecontactandPOlineendwhenPOwidth≤0.35um.PO.L.1MaximumPOlengthwhichspaceis0.4umI1.0
mandwithacontactinbetweenpolylinesPO.L.2MaximumPOlengthwhichis45degreebentI11.0
mA/BD1N+/P+POGFPON+/P+ED2CDII1POPOPOPOPOODODODODHD2M1PO.R.3Minimumpolydensitymustbegreaterthanorequalto14%
whichisderivedfromtotalpolyarea/chiparea哈工大微電子中心來逢昌五、P+S/DRule(Pplus)PP.W.1MinimumwidthofanPPregionA0.44
mPP.S.1MinimumspacebetweentwoPPregionsB
0.44
m
Mergeifthespaceislessthan0.44umPP.C.1MinimumclearancefromanPPregionC0.26
m
toanN+activeODregionPP.C.2MinimumclearancefromanPPregionC1
0.14
m
toanonbuttededgeofN-wellpick-upN+ODregionPP.C.3MinimumclearancefromanPPedgeD*,E0.32
m
toaP-ChannelPOgatePP.O.1MinimumoverlapfromanPPedgeF
0.32
m
toanODregionPP.E.1MinimumextensionofanPPregionG0.26
m
beyondaP+activeregionPP.E.2MinimumextensionofanPPregionH
0.04
m
beyondaPwellpick-upP+ODregionPP.C.5ClearancefromaPPregiontothebutted*
0.0
medgeofabutteddiffusionN+OD(insideN-well)NPN+ODPPN-WellP-WellAANPPPNPNPHP+ODP+ODP+ODN+ODN+ODCBFEDGC1PP0.3
m哈工大微電子中心來逢昌六、N+S/DRule(Nplus)NP.W.1MinimumwidthofanNPregionA0.44
mNP.S.1MinimumspacebetweentwoNPregionsB
0.44
m
Mergeifthespaceislessthan0.44umNP.C.1MinimumclearancefromanNPregionC0.26
m
toanP+activeODregionNP.C.2MinimumclearancefromanNPregionC1
0.14
m
toanonbuttededgeofP-wellpick-upP+ODregionNP.C.3MinimumclearancefromanNPedgeD*,E0.32
m
toaN-ChannelPOgateNP.O.1MinimumoverlapfromanNPedgeF
0.32
m
toanODregionNP.E.1MinimumextensionofanNPregionG0.26
m
beyondaN+activeregionNP.E.2MinimumextensionofanNPregionH
0.04
m
beyondaNwellpick-upN+ODregionNP.C.5ClearancefromaNPregiontothebutted*
0.0
medgeofabutteddiffusionP+OD(insideP-well)PPP+ODNPP-WellN-WellAAPPNPPPPPHN+ODN+ODN+ODP+ODP+ODCBFEDGC1NP0.3
m哈工大微電子中心來逢昌七、ContactRuleCO.W.1MinimumandmaximumwidthofaCO
A0.3
m
regionCO.S.1MinimumspacebetweentwoCOregionsB0.3
mCO.C.1MinimumclearancefromaCOonODC0.22
mregiontoaPOgateCO.C.2MinimumclearancefromaCOonPO
D0.28
m
regiontoanODregionCO.E.1
MinimumextensionofanODregionE0.14
m
beyondaODCOregionCO.E.2MinimumextensionofaPOregionbeyond
F0.14
m
aPolyCOregionCO.E.3MinimumextensionofaPPregionbeyond
G0.18
m
aODCOregionCO.E.4MinimumextensionofaNPregionbeyond
H0.18
m
aODCOregionCO.R.1COonactivepolygateregionisforbiddenCO.R.2Non-square(butted)contactisnotallowedFDEAN+POBCEGPPCONPEHCOCOP+哈工大微電子中心來逢昌八、Metal1RuleAABDD<1.0
m>10
mC1C1CCC1CC1CC1C2C20.4
m0.9
m0.6
m0.6
mCOCOCOCOCOM1M1M1M1M1M1M1EM1.W.1MinimumwidthofM1region
A0.32
mM1.S.1MinimumspacebetweentwoM1regions
B0.32
mM1.E.1MinimumextensionofM1regionbeyond
C0.01
m
COregionM1.E.2.MinimumextensionofM1end-of-line
C10.09
m
regionbeyondCOregion
ForCOlocatedatthe90degreecorner,atleastonesideofmetalextensionmustbetreatedasend-of-lineandanothersidecanfollowM1.E.1M1.S.2Minimumspacebetweenmetallineswith
D0.6
m
oneorbothmetallinewidthandlengthare>10um;
theminimumspacemustbemaintainedbetweenametallineandasmallpieceofmetal(≤10um)thatisconnectedtothewidemetalwithin1.0umrangefromthewidemetal.M1.A.1MinimumareaofM1region
E0.36
m2RecommendationMinimumandmaximumC2
0.15
m
extensionofM1island(0.6umx0.6um)beyondaCOregionwhichisastackedCO/VIAM1.R.1MinimumdensityofM1area.30%
Densityiscalculatedas
Totalmetallayoutarea/chiparea哈工大微電子中心來逢昌九、Viax(x=1,2,3,4)RuleVIAx.W.1MinimumandmaximumwidthofViax
A0.36
m
regionVIAx.S.1MinimumspacebetweentwoViaxregions
B0.35
mVIAx.E.1MinimumextensionofMxregionbeyond
C0.02
m
ViaxregionVIAx.E.2MinimumextensionofMxend-of-lineC10.09
m
regionbeyondViaxregion
ForViaxlocatedatthe90degreecorner,atleastonesideofmetalextensionmustbetreatedasend-of-lineandanothersidecanfollowVIAx.E.1VIAx.C.1ViaxcanbefullyorpartiallystackedonanycombinationofstackedstructuresuchasstackedViax-1../CORecommendationMinimumandmaximumextension
D0.12
m
ofMxislandwhichis0.6umx0.6umbeyond
ViaxregionCCC1DD0.4
m0.9
m0.6
m0.6
mViaxViaxMxMxEC1ViaxViaxC1MxCCC1C1ViaxBAC1C1C1CC
C>CMx—1,2,3,4哈工大微電子中心來逢昌十、Metalx
(x=2,3,4)RuleAABDD<1.0
m>10
mC1C1CCC1CC1CC1C2C20.4
m0.9
m0.6
m0.6
mViaViaViaViaViaMxMxMxMxMxMxMxEMx.W.1MinimumwidthofMxregionA0.4
mMx.S.1MinimumspacebetweentwoMxregionsB0.4
mMx.E.1MinimumextensionofMxregionbeyondC0.02
m
Viax-1regionMx.E.2.MinimumextensionofMxend-of-line
C10.09
m
regionbeyondVIAx-1region.
ForViax-1locatedatthe90degreecorner,atleastonesideofmetalextensionmustbetreatedasend-of-lineandanothersidecanfollowMx.E.1Mx.S.2Minimumspacebetweenmetallineswith
D0.6
m
oneorbothmetallinewidthandlengthare>10um;theminimumspacemustbemaintainedbetweenametallineandasmallpieceofmetal(≤10um)thatisconnectedtothewidemetalwithin1.0umrangefromthewidemetalMx.A.1MinimumareaofMxregion
E0.36
m2Mx.R.1MinimumdensityofMxarea.30%DensityiscalculatedasTotalmetallayoutarea/chiparea哈工大微電子中心來逢昌十一、Metal5(Topmetal)RuleM5.W.1MinimumwidthofM5region
A0.44
mM5.S.1Minimumspa
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