【MOOC】光電子學(xué)-南京郵電大學(xué) 中國(guó)大學(xué)慕課MOOC答案

【MOOC】光電子學(xué)-南京郵電大學(xué)中國(guó)大學(xué)慕課MOOC答案光的認(rèn)識(shí)1-隨堂測(cè)驗(yàn)1、【判斷題】托勒密發(fā)現(xiàn)的入射角和折射角成比例是否正確？本題答案：【錯(cuò)誤】2、【判斷題】望遠(yuǎn)鏡是伽利略發(fā)明的？本題答案：【錯(cuò)誤】3、【判斷題】威特洛將星星的閃爍解釋為空氣的運(yùn)動(dòng)，是否正確？本題答案：【正確】4、【填空題】用透明度極好的石頭點(diǎn)火，其中石頭形狀類(lèi)似于凸透鏡還是凹透鏡？本題答案：【凸透鏡】光的認(rèn)識(shí)2-隨堂測(cè)驗(yàn)1、【判斷題】折射定律是斯涅耳最早發(fā)現(xiàn)的。本題答案：【正確】2、【判斷題】笛卡爾用理論推導(dǎo)出折射定律。本題答案：【正確】3、【判斷題】微粒說(shuō)可以解釋光的反射、折射現(xiàn)象。本題答案：【正確】4、【判斷題】菲涅耳將惠更斯原理與楊氏干涉原理相結(jié)合，不僅解釋直線傳播，還可解釋衍射現(xiàn)象。本題答案：【正確】光的認(rèn)識(shí)3-隨堂測(cè)驗(yàn)1、【判斷題】麥克斯韋根據(jù)麥克斯韋方程預(yù)言了電磁波的存在。本題答案：【正確】2、【判斷題】光電效應(yīng)、熱輻射、光壓體現(xiàn)了光的波動(dòng)性。本題答案：【錯(cuò)誤】3、【判斷題】光具有波動(dòng)性和粒子性兩重特性，稱為波粒二象性。本題答案：【正確】麥克斯韋方程微分形式-隨堂測(cè)驗(yàn)1、【判斷題】麥克斯韋方程只有一個(gè)方程。本題答案：【錯(cuò)誤】2、【判斷題】麥克斯韋方程的微分形式在真空中和介質(zhì)中形式有所不同。本題答案：【正確】3、【判斷題】由麥克斯韋方程，結(jié)合具體的邊界條件及初始條件，可定量研究光的各種傳輸特性。本題答案：【正確】矢量運(yùn)算-隨堂測(cè)驗(yàn)1、【判斷題】矢量有大小、沒(méi)有方向。本題答案：【錯(cuò)誤】2、【判斷題】矢量具有結(jié)合律。本題答案：【正確】3、【判斷題】梯度的散度是存在的。本題答案：【正確】4、【判斷題】梯度的旋度是存在的。本題答案：【正確】物質(zhì)方程-隨堂測(cè)驗(yàn)1、【判斷題】光波在各種介質(zhì)中的傳播過(guò)程是光與介質(zhì)相互作用的過(guò)程。本題答案：【正確】2、【判斷題】物質(zhì)方程是描述介質(zhì)特性對(duì)電磁場(chǎng)影響的方程。本題答案：【正確】3、【判斷題】物質(zhì)方程給出了媒質(zhì)的電學(xué)和磁學(xué)性質(zhì)，它們是光與物質(zhì)相互作用時(shí)媒質(zhì)中大量分子平均作用的結(jié)果。本題答案：【正確】4、【判斷題】在光學(xué)各向異性介質(zhì)中，磁導(dǎo)率和介電常數(shù)是張量。本題答案：【正確】麥克斯韋方程積分形式-隨堂測(cè)驗(yàn)1、【判斷題】麥克斯韋方程的微分形式和積分形式是等價(jià)的。本題答案：【正確】2、【判斷題】麥克斯韋方程的微分形式和積分形式是可以相互推導(dǎo)出來(lái)的。本題答案：【正確】3、【判斷題】麥克斯韋方程的積分形式也是4個(gè)方程。本題答案：【正確】麥克斯韋方程物理意義-隨堂測(cè)驗(yàn)1、【判斷題】麥克斯韋方程1式代表電場(chǎng)的高斯定律：電場(chǎng)可以是有源場(chǎng)；電力線必須從正電荷出發(fā)終止于負(fù)電荷。本題答案：【正確】2、【判斷題】麥克斯韋方程2式代表磁通連續(xù)定律（磁場(chǎng)高斯定理）：磁場(chǎng)是無(wú)源場(chǎng)；通過(guò)閉合面的磁通量等于零，磁力線是閉合的。本題答案：【正確】3、【判斷題】麥克斯韋方程3式代表了法拉第電磁感應(yīng)定律：變化磁場(chǎng)產(chǎn)生感應(yīng)電場(chǎng)（渦旋場(chǎng)），其電力線是閉合的。本題答案：【正確】4、【判斷題】麥克斯韋方程3式代表了安培全電流定律：傳導(dǎo)電流和位移電流都對(duì)磁場(chǎng)的產(chǎn)生有貢獻(xiàn)。本題答案：【正確】波動(dòng)方程-隨堂測(cè)驗(yàn)1、【判斷題】波動(dòng)方程可以由麥克斯韋方程推導(dǎo)出來(lái)。本題答案：【正確】2、【判斷題】波動(dòng)方程描述了電磁場(chǎng)在空間中傳播的規(guī)律。本題答案：【正確】3、【判斷題】根據(jù)波動(dòng)方程可以推算電磁波速度。本題答案：【正確】光的偏振-隨堂測(cè)驗(yàn)1、【判斷題】線偏振、圓偏振都屬于是特殊的橢圓偏振。本題答案：【正確】2、【判斷題】光的偏振狀態(tài)可以由一個(gè)橢圓方程來(lái)描述。本題答案：【正確】3、【判斷題】圓偏振光分為左旋和右旋兩種狀態(tài)。本題答案：【正確】光的反射和折射-隨堂測(cè)驗(yàn)1、【判斷題】光的入射角等于反射角。本題答案：【正確】2、【判斷題】光的折射角一定等于光的入射角。本題答案：【錯(cuò)誤】3、【判斷題】光的折射定律描述了光的入射角和折射角之間的定量關(guān)系。本題答案：【正確】光的干涉和衍射-隨堂測(cè)驗(yàn)1、【判斷題】用惠更斯-菲涅耳原理，可以解釋光的干涉和衍射現(xiàn)象。本題答案：【正確】2、【判斷題】光的衍射現(xiàn)象可以看作是多個(gè)光的干涉。本題答案：【正確】3、【判斷題】光的衍射和干涉體現(xiàn)了光的波動(dòng)性。本題答案：【正確】第一單元作業(yè)單元測(cè)驗(yàn)1、【判斷題】托勒密發(fā)現(xiàn)的入射角和折射角成比例是否正確？本題答案：【錯(cuò)誤】2、【判斷題】威特洛將星星的閃爍解釋為空氣的運(yùn)動(dòng)，是否正確？本題答案：【正確】3、【判斷題】折射定律是斯涅耳最早發(fā)現(xiàn)的。本題答案：【正確】4、【判斷題】笛卡爾用理論推導(dǎo)出折射定律。本題答案：【正確】5、【判斷題】菲涅耳將惠更斯原理與楊氏干涉原理相結(jié)合，不僅解釋直線傳播，還可解釋衍射現(xiàn)象。本題答案：【正確】6、【判斷題】光電效應(yīng)、熱輻射、光壓體現(xiàn)了光的波動(dòng)性。本題答案：【錯(cuò)誤】7、【判斷題】麥克斯韋方程只有一個(gè)方程。本題答案：【錯(cuò)誤】8、【判斷題】麥克斯韋方程的微分形式在真空中和介質(zhì)中形式有所不同。本題答案：【正確】9、【判斷題】光波在各種介質(zhì)中的傳播過(guò)程是光與介質(zhì)相互作用的過(guò)程。本題答案：【正確】10、【判斷題】物質(zhì)方程給出了媒質(zhì)的電學(xué)和磁學(xué)性質(zhì)，它們是光與物質(zhì)相互作用時(shí)媒質(zhì)中大量分子平均作用的結(jié)果。本題答案：【正確】11、【判斷題】在光學(xué)各向異性介質(zhì)中，磁導(dǎo)率和介電常數(shù)是張量。本題答案：【正確】12、【判斷題】麥克斯韋方程的微分形式和積分形式是可以相互推導(dǎo)出來(lái)的。本題答案：【正確】13、【判斷題】波動(dòng)方程可以由麥克斯韋方程推導(dǎo)出來(lái)。本題答案：【正確】14、【判斷題】波動(dòng)方程描述了電磁場(chǎng)在空間中傳播的規(guī)律。本題答案：【正確】15、【判斷題】根據(jù)波動(dòng)方程可以推算電磁波速度。本題答案：【正確】16、【判斷題】線偏振、圓偏振都屬于是特殊的橢圓偏振。本題答案：【正確】17、【判斷題】光的偏振狀態(tài)可以由一個(gè)橢圓方程來(lái)描述。本題答案：【正確】18、【判斷題】圓偏振光分為左旋和右旋兩種狀態(tài)。本題答案：【正確】19、【判斷題】光的入射角等于反射角。本題答案：【正確】20、【判斷題】光的折射角一定等于光的入射角。本題答案：【錯(cuò)誤】21、【判斷題】光的折射定律描述了光的入射角和折射角之間的定量關(guān)系。本題答案：【正確】22、【判斷題】用惠更斯-菲涅耳原理，可以解釋光的干涉和衍射現(xiàn)象。本題答案：【正確】23、【判斷題】光的衍射現(xiàn)象可以看作是多個(gè)光的干涉。本題答案：【正確】24、【判斷題】光的衍射和干涉體現(xiàn)了光的波動(dòng)性。本題答案：【正確】測(cè)驗(yàn)1、【判斷題】EnergylevelsinaLiatomarediscrete.本題答案：【正確】2、【判斷題】Above0K,duetothermalexcitation,someoftheelectronsarenotatenergiesaboveEF.本題答案：【錯(cuò)誤】3、【判斷題】TheprobabilityofoccupancyofastateatanenergyEisf(E):Fermi-Diracfunction.本題答案：【正確】4、【判斷題】Theproductg(E)f(E)isnotthenumberofelectronsperunitenergyperunitvolumeorelectronconcentrationperunitenergy.本題答案：【錯(cuò)誤】5、【判斷題】TheinteractionsbetweentheSiatomsandtheirvalenceelectronsresultintheelectronenergyinthecrystalfallingintotwodistinctenergybandscalledthevalenceband(VB)andconductionsband(CB).本題答案：【正確】6、【判斷題】Thevalencebandrepresentselectronwavefunctionsinthecrystalthatcorrespondtobondsbetweentheatoms.本題答案：【正確】7、【判斷題】ThewidthoftheCBiscalledtheelectronaffinityχ.本題答案：【正確】8、【判斷題】Eg=Ev-Ec本題答案：【錯(cuò)誤】9、【判斷題】TheCBrepresentselectronwavefunctionsinthecrystalthathavehigherenergiesthanthoseintheVBandarenormallyemptyatzeroKelvin.本題答案：【正確】10、【判斷題】AllelectronsplacedintheCBisfreetomovearoundthecrystalandalsotorespondtoelectricfieldbecausethereareplentyofneighboringemptyenergylevels.本題答案：【正確】11、【判斷題】GenerallywecantreatanelectronintheCBasifitwerefreewithinthecrystalbysimplyassigninganeffectivemassme*toit.本題答案：【正確】12、【判斷題】Thiseffectivemassisaquantummechanicalquantity,whichtakesintoaccountthattheelectronintheCBinteractswithperiodicpotentialenergyasitmovesthroughthecrystal.本題答案：【正確】13、【判斷題】WhenaphotonbreaksaSi-Sibond,afreeelectronandaholeintheSi-Sibondiscreated.Theresultisthephotogenerationofanelectronandaholepair(EHP)本題答案：【正確】14、【判斷題】Insomesemiconductors,suchasSiandGe,thephotonabsorptionprocessalsoinvolveslatticevibrations(vibrationsoftheSiatoms)本題答案：【正確】15、【判斷題】Thefreeelectron,whichisintheCB,canwanderaroundthecrystalandcontributetotheelectricalconductionwhenanelectricfieldisapplied.本題答案：【正確】測(cè)驗(yàn)1、【判斷題】ManyimportantpropertiesofsemiconductorsaredescribedbyconsideringthebehaviorofelectronsintheCBandholesintheVB.本題答案：【正確】2、【判斷題】vde=Driftvelocityoftheelectrons本題答案：【正確】3、【判斷題】me=Electrondriftmobility本題答案：【正確】4、【判斷題】Ex=Appliedelectricfield本題答案：【正確】5、【判斷題】mh=Holedriftmobility本題答案：【正確】6、【判斷題】s=Conductivity本題答案：【正確】7、【判斷題】n=ElectronconcentrationintheCB本題答案：【正確】8、【判斷題】Thenpproductisa“constant”,ni2,thatdependsonthematerialpropertiesNc,Nv,Eg,andthetemperature.Ifsomehownisincreased(e.g.bydoping),pmustdecreasetokeepnpconstant.本題答案：【正確】9、【判斷題】(3/2)kBTisalsotheaveragekineticenergyperatominamonatomicgas(kineticmoleculartheory)inwhichthegasatomsmovearoundfreelyandrandomlyinsideacontainer.本題答案：【正確】10、【判斷題】TheelectronintheCBbehavesasifitwere“free”withameankineticenergythatis(3/2)kBTandaneffectivemassme*.本題答案：【正確】11、【判斷題】Fermienergyisaconvenientwaytorepresentfreecarrierconcentrations(nintheCBandpintheVB)ontheenergybanddiagram.本題答案：【正確】12、【判斷題】ThemostuselesspropertyofEFisintermsofachangeinEF.本題答案：【錯(cuò)誤】13、【判斷題】AnychangeofEFacrossamaterialsystemrepresentselectricalworkinputoroutputperelectron.本題答案：【正確】14、【判斷題】Forasemiconductorsysteminequilibrium,inthedark,andwithnoappliedvoltageornoEMFgenerated,andEFmustbeuniformacrossthesystem.本題答案：【正確】15、【判斷題】EFmustbeuniformacrossthesystem.Ifitisnotuniform,therewillbeexcessenergyandelectricworkwillbedonetomakeituniform.Actually,thebiasisthedifferenceofEFbetweendifferentpartsofthesystem.本題答案：【正確】測(cè)驗(yàn)1、【判斷題】ThefourvalenceelectronsofAsallowittobondjustlikeSibutthefifthelectronisleftorbitingtheAssite.本題答案：【正確】2、【判斷題】ThefifthvalenceelectroncanbereadilyfreedbythermalvibrationsoftheSilattice.本題答案：【正確】3、【判斷題】TheAs+ionsremainimmobile.BecausetheAsatomdonatesanelectronintotheCB,itiscalledadonorimpurity.本題答案：【正確】4、【判斷題】TherearedonorenergylevelsjustbelowEcaroundAs+sites.本題答案：【正確】5、【判斷題】Ndni,thenatroomtemperature,theelectronconcentrationintheCBwillnearlybeequaltoNd,i.e.n≈Nd本題答案：【正確】6、【判斷題】AsmallfractionofthelargenumberofelectronsintheCBrecombinewithholesintheVBsoastomaintainnp=ni2本題答案：【正確】7、【判斷題】Theconductivityofasemiconductordependsonbothelectronsandholesasbothcontributetochargetransport.本題答案：【正確】8、【判斷題】Bhasonlythreevalenceelectrons.WhenitsubstitutesforaSiatomoneofitsbondshasanelectronmissingandthereforeahole.本題答案：【正確】9、【判斷題】AtroomtemperaturethethermalvibrationsofthelatticecanfreetheholeawayfromtheB-site.本題答案：【正確】10、【判斷題】Fortheatomwithahole,anearbyelectroncantunnelintothisholeanddisplacetheholefurtherawayfromtheBatom.本題答案：【正確】11、【判斷題】TheBatomintroducedintotheSicrystalthereforeactsasanelectronacceptorimpurity.本題答案：【正確】12、【判斷題】Nani,thenatroomtemperature,theholeconcentrationintheVBwillnearlybeequaltoNa,i.e.p≈Na本題答案：【正確】13、【判斷題】AsmallfractionofthelargenumberofholesintheVBrecombinewithelectronsintheCBsoastomaintainnp=ni2本題答案：【正確】14、【判斷題】AlthoughtherearenostatesatEF,theworkfunctionnonethelessrepresentstheaverageenergyrequiredtoremoveanelectronfromasemiconductor本題答案：【正確】15、【判斷題】Wecannotsimultaneouslyincreasetheelectronandholeconcentrationsbecausethatleadstoanincreaseintherecombinationratewhichreturnstheelectronandholeconcentrationstovaluesthatsatisfynp=ni2.本題答案：【正確】測(cè)驗(yàn)1、【判斷題】Innondegeneratesemiconductors,thenumberofstatesintheCBfarexceedsthenumberofelectrons.ThePauliexclusionprinciplecanbeneglected.本題答案：【正確】2、【判斷題】Whenthesemiconductorhasbeenexcessivelydopedwithdonors,nmaybesolarge,typically1019-1020cm-3,thePauliexclusionprinciplebecomesimportant.---Degeneratesemiconductors本題答案：【正確】3、【判斷題】Byheavilydoping,thedonorsbecomeclosertoformaband.本題答案：【正確】4、【判斷題】Bandtailing:therandomdistributionofalargenumberofdonorsinthecrystalalsointroducesarandomvariationinthepotentialenergy,whichcausesthebandtailing.本題答案：【正確】5、【判斷題】Inadegeneratesemiconductor,onecannotassumethatn=Ndorp=Na,asthedopantconcentrationissolargethattheyinteractwitheachother.Notalldopantsareabletobecomeionized.Thesaturationistypicallyaround1020cm-3.本題答案：【正確】6、【判斷題】Themassactionlawisnotvalidfordegeneratesemiconductors.本題答案：【正確】7、【判斷題】Thewholeenergydiagramtiltsbecausetheelectronhasanelectrostaticpotentialenergy.本題答案：【正確】8、【判斷題】TheE-kcurveconsistsofmanydiscretepointswitheachpointcorrespondingtoapossiblestate本題答案：【正確】9、【判斷題】IntheenergyrangeEvtoEctherearenostates.本題答案：【正確】10、【判斷題】InGaAstheminimumoftheCBisdirectlyabovethemaximumoftheVB.GaAsisthereforeadirectbandgapsemiconductor.本題答案：【正確】11、【判斷題】InSi,theminimumoftheCBisdisplacedfromthemaximumoftheVBandSiisanindirectbandgapsemiconductor.本題答案：【正確】12、【判斷題】RecombinationofanelectronandaholeinSiinvolvesarecombinationcenter(crystaldefectsorimpurities)本題答案：【正確】測(cè)驗(yàn)1、【判斷題】Theelectricfieldacrossthepnjunctionisfoundbyintegratingthedensityofelectrons.本題答案：【正確】2、【判斷題】Potentialenergyischarge*potential=qV本題答案：【正確】3、【判斷題】Wo=Wn+Wpisthetotalwidthofthedepletionregionunderazeroappliedvoltage本題答案：【正確】4、【判斷題】BoltzmannStatisticscanonlybeusedwithnondegeneratesemiconductors.本題答案：【正確】5、【判斷題】ThenegativepolarityofthesupplywillreducethepotentialbarrierVobyVbecausetheappliedvoltagedropsmostlyacrossthedepletionwidthW.本題答案：【正確】6、【判斷題】ThebulkregionsoutsidetheSCLhavehighconductivities,duetotheplentyofmajoritycarriersinthebulk,incomparisonwithdepletionregioninwhichtherearemainlyimmobileions(withlargerresistivity).本題答案：【正確】7、【判斷題】Theprobabilitythataholeinthep-sidewillsurmountthepotentialbarrieranddiffusetothen-sidenowbecomesproportionaltoexp[-e(Vo-V)/kBT].Inotherwords,theappliedvoltageeffectivelyreducesthebuilt-inpotentialandhencethebuilt-infieldwhichactsagainstdiffusion.本題答案：【正確】8、【判斷題】Manyholescandiffuseacrossthedepletionregionandenterthen-side.Thisresultsinthe“injectionofexcessminoritycarriers”,i.e.,holesintothen-region.本題答案：【正確】9、【判斷題】Theholeconcentrationpn(0)justoutsidethedepletionregionatx’=0inthen-sideisverylargeduetotheinjectionofminoritycarriers.本題答案：【正確】10、【判斷題】Whenholesareinjectedintotheneutraln-side,theydrawsomeelectronsfromthebulkofn-side(andhencefromthebattery)sothatthereisasmallincreaseintheelectronconcentration.Thissmallincreaseinthemajoritycarriersisnecessarytobalancetheholechargesandmaintainneutralityinthen-side.本題答案：【正確】11、【判斷題】1/Lh=Meanprobabilityofrecombinationperunitdistance;ormeandistancediffused本題答案：【正確】12、【判斷題】Disthediffusioncoefficientinnondegeneratesemiconductors,anditisrelatedtoandalsocanbecalculatedfromthedriftmobility本題答案：【正確】13、【判斷題】Thetotalcurrentanywhereinthedeviceisconstant.Itisthesumofholeandelectroncontributions.Justoutsidethedepletionregionitisduetothediffusionofminoritycarriers.本題答案：【正確】14、【判斷題】nidependsstronglyonthematerial(e.g.bandgap)andtemperature本題答案：【正確】15、【判斷題】Joisaconstantandηisanidealityfactor,1:fordiffusion-controlledand2:forrecombination-controlledforwardcurrentcharacteristics本題答案：【正確】測(cè)驗(yàn)1、【判斷題】Theelectricfieldbecomeslargerduetothereversebias.Toaccommodatethislargerfield,thewidthsofthedepletionregiononthepandnsidewidentoexposemoreionizeddopants.本題答案：【正確】2、【判斷題】ThecurrentunderrevsersebiascomesfromdiffusioncurrentinneutralregionsandThermalgeneratedcurrentindepletionregion.本題答案：【正確】3、【判斷題】InaGepnjunction,above238K,Ireviscontrolledbyni2andbelow238Kitiscontrolledbyni.本題答案：【正確】4、【判斷題】DiffusioncurrentinneutralregionsiscalledShockleyreversecurrent.本題答案：【正確】測(cè)驗(yàn)1、【判斷題】TheforwardvoltageacrossapnjunctionincreasesbydV,whichleadstofurtherminoritycarrierinjectionandalargerforwardcurrent,whichisincreasesbydI.AdditionalminoritycarrierchargedQisinjectedintothen-side.TheincreasedQinchargestoredinthen-sidewithdVappearsasifthereisacapacitanceacrossthediode.本題答案：【正確】2、【判斷題】TheincreasedVresultsinanincreasedIinthediodecurrent.Thedynamicorincrementalresistanceisrd=dV/dI.本題答案：【正確】3、【判斷題】Depletionregionhasnegative(-Q)chargesinWpandpositive(+Q)chargesinWn,whichareseparatedasinacapacitor.本題答案：【正確】測(cè)驗(yàn)1、【判斷題】Assumingweakinjection,wecancalculatetherecombinationtimesteandthforelectronsandholesrecombiningintheneutralpandn-regionsrespectively.本題答案：【正確】2、【判斷題】Theelectronsdiffusemuchfurtherinthep-side.本題答案：【正確】3、【判斷題】RecombinationcomponentofthecurrentisquitedifficulttocalculatebecauseweneedtoknowthemeanelectronandholerecombinationtimesintheSCL.本題答案：【正確】4、【判斷題】Therecombinationcurrentismorethananorderofmagnitudegreaterthanthediffusioncurrentunderlowerbias.本題答案：【正確】5、【判斷題】TheEHPrecombinationthatoccursintheSCLandtheneutralregionsinthisGaAspnjunctioncasewouldresultinphotonemission,withaphotonenergythatisapproximatelyEg.ThisdirectrecombinationofinjectedminoritycarriersandtheresultingemissionofphotonsrepresenttheprincipleofoperationoftheLightEmittingDiode(LED).本題答案：【正確】測(cè)驗(yàn)1、【判斷題】EFp-Evfarawayfromthejunctioninsidethep-typematerialshouldbethesameasintheisolatedp-typematerial.本題答案：【正確】2、【判斷題】Theinstantthetwosemiconductorsarebroughttogethertoformthejunction,electronsdiffusefromthen-sidetothep-sideandastheydosotheydepletethen-sidenearthejunction.本題答案：【正確】3、【判斷題】Anelectroninthen-sideatEcmustovercomeapotentialenergy(PE)barriertogoovertoEcinthep-side.ThisPEbarrieriseVowhereVoisthebuilt-inpotential,i.e.,themaximumextentEchasbeenbenttolineuptheFermilevels.本題答案：【正確】4、【判斷題】Whenthepnjunctionisforwardbiased,themajorityoftheappliedvoltagedropsacrossthedepletionregionsothattheappliedvoltageisinoppositiontothebuilt-inpotential,Vo.本題答案：【正確】5、【判斷題】TheShockleymodelpredictsasmallreversesaturationcurrentduetothediffusionofminoritycarriersinneutralregionstothedepletionregion.本題答案：【正確】測(cè)驗(yàn)1、【判斷題】Aheterojunctionisajunctionbetweentwodifferentsemiconductorcrystalswithdifferentbandgaps.本題答案：【正確】2、【判斷題】TheenergydiscontinuitiesindEcanddEvarecalledbandoffsetsandplayanimportantroleinheterojunctiondevices.本題答案：【正確】3、【判斷題】ThedopinginthewiderbandgapsemiconductorisusuallydenotedwithacapitalletterNorP.andthatinthenarrowerbandgapsemiconductorwithlowercasenorp.本題答案：【正確】4、【判斷題】Underopencircuitandequilibriumconditions,theFermilevelEFmustbeuniform,i.e.continuousthroughoutthedevice.本題答案：【正確】5、【判斷題】FarawayfromthejunctionontheN-side,wehaveann-typewidebandgapAlGaAswithEFclosetoEc.本題答案：【正確】測(cè)驗(yàn)1、【判斷題】TheappliedbiaspotentialVreducesVoandtherebyallowselectronstodiffuse,beinjected,intothep-side.本題答案：【正確】2、【判斷題】Recombinationaroundthejunctionandwithinthediffusionlengthoftheelectronsinthep-sideleadstospontaneousphotonemission.本題答案：【正確】3、【判斷題】misanumericalfactorthatistypicallybetween1.5and2.5,thoughformanyLEDs,m=3isagoodvalue.本題答案：【正確】4、【判斷題】Aspreadintheoutputwavelengthsisrelatedtoaspreadintheemittedphotonenergies.本題答案：【正確】測(cè)驗(yàn)1、【判斷題】AQWstructurehastheenergylevelsinthewells.本題答案：【正確】2、【判斷題】InaQW,chargecarriersarebroughtinbythecurrentfallintothelowestenergylevelinthewellandthenrecombine,emittingaphoton.本題答案：【正確】3、【判斷題】Theelectronsataparticularenergylevelalsohavekineticenergiesintheyzplane,whichisnotquantized.本題答案：【正確】4、【判斷題】TheelectronsarethereforespreadinenergyaboveEn.本題答案：【正確】測(cè)驗(yàn)1、【判斷題】FreespacewavelengthcoveragebydifferentLEDmaterialsfromthevisiblespectrumtotheinfraredincludingwavelengthsusedinopticalcommunications.本題答案：【正確】2、【判斷題】LEDmaterialsincludedirectandindirectbandgapones.本題答案：【正確】3、【判斷題】Someoftheinternallygeneratedlightsufferstotalinternalreflection(TIR)atthesemiconductor/airinterfaceandcannotbeemittedintotheoutside.本題答案：【正確】4、【判斷題】AdistributedBraggreflector(DBR),thatisadielectricmirror,undertheconfininglayer(belowtheactiveregioningrey)actsasadielectricmirror,andincreasestheextractionratio.本題答案：【正確】5、【判斷題】AnRCLEDisanLEDwithanopticalresonantcavity(RC)formedbytwoDBRshasanarroweremissionspectrum.本題答案：【正確】測(cè)驗(yàn)1、【判斷題】Externalquantumefficiency(EQE)hEQEofanLEDrepresentstheefficiencyofconversionfromelectricalquanta,i.e.electrons,thatflowintheLEDtoopticalquanta,i.e.photons,thatareemittedintotheoutsideworld.本題答案：【正確】2、【判斷題】Powerconversionefficiency(PCE)istheefficiencyofconversionfromtheinputofelectricalpowertotheoutputofopticalpower本題答案：【正確】3、【判斷題】Luminousfluxisameasureofvisualbrightness,inlumens(lm).本題答案：【正確】4、【判斷題】Theluminousefficiencyofthelight-adapted(photopic)eyeasafunctionofwavelength.本題答案：【正確】測(cè)驗(yàn)1、【判斷題】Current-VoltagecharacteristicsofafewLEDSemittingatdifferentwavelengthsfromtheIRtobluelooklikethatofnormaldiodes.本題答案：【正確】2、【判斷題】ThereisaLog-logrelationbetweentheemittedopticaloutputpowerandthedccurrent.本題答案：【正確】測(cè)驗(yàn)1、【判斷題】LightcouldbecoupledfromasurfaceemittingLEDintoamultimodefiberusinganindexmatchingepoxy.本題答案：【正確】2、【判斷題】AmicrolenscouldfocusdiverginglightfromasurfaceemittingLEDintoamultimodeopticalfiber.本題答案：【正確】3、【判斷題】LightfromanedgeemittingLEDiscoupledintoafibertypicallybyusingalensoraGRINrodlens.本題答案：【正確】測(cè)驗(yàn)1、【判斷題】Photoluminescenceistheemissionoflightbyamaterial,calledaphosphor.本題答案：【正確】2、【判斷題】phosphor,thathasbeenfirstexcitedbylightofhigherfrequency.Higherenergyphotonsarefirstabsorbed,andthenlowerenergyphotonsareemitted.本題答案：【正確】3、【判斷題】Typicallytheemissionoflightoccursfromcertaindopants,impuritiesorevendefects,calledluminescentorluminescencecenters,purposefullyintroducedintoahostmatrix,whichmaybeacrystalorglass.本題答案：【正確】4、【判斷題】Manyphosphorsarebasedonactivatorsdopedintoahostmatrix.本題答案：【正確】5、【判斷題】Theluminescentcenterisalsocalledanactivator.本題答案：【正確】第三單元作業(yè)第三單元測(cè)驗(yàn)1、【判斷題】TheinteractionsbetweentheSiatomsandtheirvalenceelectronsresultintheelectronenergyinthecrystalfallingintotwodistinctenergybandscalledthevalenceband(VB)andconductionsband(CB).本題答案：【正確】2、【判斷題】ThewidthoftheCBiscalledtheelectronaffinityχ.本題答案：【正確】3、【判斷題】Eg=Ev-Ec本題答案：【錯(cuò)誤】4、【判斷題】vdh=Driftvelocityoftheholes本題答案：【正確】5、【判斷題】TheareaunderpE(E)versusEisnottheholeconcentration.本題答案：【錯(cuò)誤】6、【判斷題】ThemostuselesspropertyofEFisintermsofachangeinEF.本題答案：【錯(cuò)誤】7、【判斷題】ThefifthvalenceelectroncanbereadilyfreedbythermalvibrationsoftheSilattice.本題答案：【正確】8、【判斷題】Ndni,thenatroomtemperature,theelectronconcentrationintheCBwillnearlybeequaltoNd,i.e.n≈Nd本題答案：【錯(cuò)誤】9、【判斷題】Theconductivityofasemiconductordependsonbothelectronsandholesasbothcontributetochargetransport.本題答案：【正確】10、【判斷題】ThereareacceptorenergylevelsjustaboveEvaroundB-sites.TheseacceptorlevelsacceptelectronsfromtheVBandthereforecreateholesintheVB.本題答案：【正確】11、【判斷題】AtroomtemperaturethethermalvibrationsofthelatticecanfreetheholeawayfromtheB-site.本題答案：【正確】12、【判斷題】Nani,thenatroomtemperature,theholeconcentrationintheVBwillnearlybeequaltoNa,i.e.p≈Na本題答案：【錯(cuò)誤】13、【判斷題】nadegeneratesemiconductor,onecannotassumethatn=Ndorp=Na,asthedopantconcentrationissolargethattheyinteractwitheachother.Notalldopantsareabletobecomeionized.Thesaturationistypicallyaround1020cm-3.本題答案：【正確】14、【判斷題】Wo=Wn+Wpisthetotalwidthofthedepletionregionunderazeroappliedvoltage本題答案：【正確】15、【判斷題】InaGepnjunction,above238K,Ireviscontrolledbyni2andbelow238Kitiscontrolledbyni.本題答案：【正確】16、【判斷題】TheincreasedVresultsinanincreasedIinthediodecurrent.Thedynamicorincrementalresistanceisrd=dV/dI.本題答案：【正確】17、【判斷題】TheEHPrecombinationthatoccursintheSCLandtheneutralregionsinthisGaAspnjunctioncasewouldresultinphotonemission,withaphotonenergythatisapproximatelyEg.ThisdirectrecombinationofinjectedminoritycarriersandtheresultingemissionofphotonsrepresenttheprincipleofoperationoftheLightEmittingDiode(LED).本題答案：【正確】18、【判斷題】Aftertheformationofthepnjunction,thereisabuilt-involtageacrossthejunction.本題答案：【正確】19、【判斷題】Anelectroninthen-sideatEcmustovercomeapotentialenergy(PE)barriertogoovertoEcinthep-side.ThisPEbarrieriseVowhereVoisthebuilt-inpotential,i.e.,themaximumextentEchasbeenbenttolineuptheFermilevels.本題答案：【正確】20、【判斷題】IfEFisclosetotheconductionband(CB)edge,Ec,itresultsinann-type,andifitisclosetothevalenceband(VB)edge,Ev,itresultsinap-typesemiconductor.本題答案：【正確】21、【判斷題】Recombinationaroundthejunctionandwithinthediffusionlengthoftheelectronsinthep-sideleadstospontaneousphotonemission.本題答案：【正確】22、【判斷題】Theelectronsataparticularenergylevelalsohavekineticenergiesintheyzplane,whichisnotquantized.本題答案：【正確】23、【判斷題】AnRCLEDisanLEDwithanopticalresonantcavity(RC)formedbytwoDBRshasanarroweremissionspectrum.本題答案：【正確】24、【判斷題】LightcouldnotbecoupledfromasurfaceemittingLEDintoamultimodefiberusinganindexmatchingepoxy.本題答案：【錯(cuò)誤】25、【判斷題】Manyphosphorsarebasedonactivatorsdopedintoahostmatrix.本題答案：【正確】測(cè)驗(yàn)1、【判斷題】Theions(Cr3+ions)inthegroundstatearepumpeduptotheenergylevelE3byphotonsfromanopticalexcitationsource.本題答案：【正確】2、【判斷題】Photonsfromthestimulatedemissioncanthemselvesfurtherstimulateemissionsleadingtoanavalancheofstimulatedemissionsandcoherentphotonsbeingemitted.本題答案：【正確】3、【判斷題】Atypicalconstructionforarubylaser,whichusesanellipticalreflector,andhastherubycrystalatonefocusandthepumplightattheotherfocus.本題答案：【正確】測(cè)驗(yàn)1、【判斷題】Insemiconductorlaserdiode,banddiagramneedsasufficientlylargeforwardbiastocausepopulationinversionandhencestimulatedemission.本題答案：【正確】2、【判斷題】RobertHallandhiscolleagues,whileworkingatGeneralElectric'sResearchandDevelopmentCenterinNewYork,wereamongthefirstgroupsofresearcherstoreportaworkingsemiconductorlaserdiodein1962.本題答案：【正確】測(cè)驗(yàn)1、【判斷題】Adoubleheterostructuresemiconductorlaserdevicehasitsactiveregionburiedwithinthedeviceinsuchawaythatitissurroundedbylowrefractiveindexmaterialsrenderingtheactiveregionasawaveguide.本題答案：【正確】2、【判斷題】Aburiedheterostructurelaserdiodefortelecomapplications:Theactivelayer(InGaAsP)issurroundedbythewiderbandgap,lowerrefractiveindexInPmaterial.LayersaregrownonanInPsubstrate.本題答案：【正確】測(cè)驗(yàn)1、【判斷題】Thedensityofsatesg(E)isastep-likefunction,andisfiniteatE1andE1￠.本題答案：【正確】2、【判斷題】Inmultiplequantumwell(MQW)heterostructurelaserdiode,electronsareinjectedbytheforwardcurrentintoquantumwells.本題答案：【正確】3、【判斷題】InMQW,mostofthelightisintheactiveregion.本題答案：【正確】測(cè)驗(yàn)1、【判斷題】Atsufficientlyhighdiodecurrentscorrespondingtohighopticalpower,theoperationbecomessinglemode.本題答案：【正確】2、【判斷題】Extractionefficiency=(Lossfromtheexitcavityend)/(Totalloss)本題答案：【正確】3、【判斷題】PowerConversionEfficiency=Opticaloutputpower/Electricinputpower本題答案：【正確】測(cè)驗(yàn)1、【判斷題】Whenthelaserisinasteadystate,Rateofcoherentphotonlossinthecavity=Rateofstimulatedemissions本題答案：【正確】2、【判斷題】Whenthelaserisinasteadystate,Rateofcoherentphotonlossinthecavity=Rateofstimulatedemissions本題答案：【正確】測(cè)驗(yàn)1、【判斷題】PartiallyreflectedwavesatthecorrugationscanonlyconstituteareflectedwavewhenthewavelengthsatisfiestheBraggcondition.本題答案：【正確】2、【判斷題】Themodefielddiameterisnormallylargerthantheactivelayerthicknessandtheradiationspreadsintotheguidinglayer.本題答案：【正確】測(cè)驗(yàn)1、【判斷題】ThecavityinVerticalCavitySurfaceEmittingLasersisvertical.本題答案：【正確】2、【判斷題】ThecrosssectionofVerticalCavitySurfaceEmittingLasersiscircular.本題答案：【正確】測(cè)驗(yàn)1、【判斷題】Travelingwave(TW)semiconductoropticalamplifier:Theendsoftheopticalcavityhaveantireflection(AR)coatingssothattheopticalcavitydoesnotactasanefficientopticalresonator,aconditionforlaser-oscillations.本題答案：【正確】2、【判斷題】Lightfromanopticalfiberiscoupledintotheactiveregionofthelaserstructure.Astheradiationpropagatesthroughtheactivelayer,opticallyguidedbythislayer,itbecomesamplifiedbytheinducedstimulatedemissions,andleavestheopticalcavitywithahigherintensity.本題答案：【正確】第四單元作業(yè)第四單元測(cè)驗(yàn)1、【判斷題】IonsatE3rapidlydecaytothelong-livedstateattheenergylevelE2byemittinglatticevibrations(phonons).本題答案：【正確】2、【判斷題】AsthestatesatE2arelong-lived,theyquicklybecomepopulatedandthereisapopulationinversionbetweenE2andE1.本題答案：【正確】3、【判斷題】Arandomphoton(fromspontaneousdecay)ofenergyhu21=E2-E1cannotinitiatestimulatedemission.本題答案：【錯(cuò)誤】4、【判斷題】Insemiconductorlaserdiode,banddiagramdoesnotneedasufficientlylargeforwardbiastocausepopul