面板制程 CF process 簡(jiǎn)介

1、CF Process,簡(jiǎn)介,Jerry,TFT/LCD,材料工程部,CMO Confidential,LCD & CF,結(jié)構(gòu)簡(jiǎn)介,CF,光阻材料簡(jiǎn)介,CF,製程及檢驗(yàn)手法簡(jiǎn)介,Macro Inspection,判定方法,Micro Inspection,判定方法,CF Product ID naming rule,課程大綱,CMO Confidential,LCD,面板,結(jié)構(gòu)圖,下玻璃基板,上玻璃基板,上偏光板,PS,液晶分子,下偏光板,框膠,配向膜,TFT,元件,彩色濾光板,液晶層,光線,背光源,LCD,L,iquid,C,rystal,D,isplay,液晶顯示器,CMO Confiden

2、tial,CF,結(jié)構(gòu)圖,ITO,剖,面,示,意,圖,俯,視,示,意,圖,實(shí)際圖例,素玻璃,BM,R,Layer,G,B,MVA,PS,CF,C,olor,F,ilter,彩色濾光片,CMO Confidential,光阻材料分類與成分,正型光阻,BM (Cr), MVA,負(fù)型光阻,Color Resist,R,G,B, PS, RBM,彩色光阻,溶劑,固成分,Paste,Polymer,Monomer,Photo-initiator,Additive,Pigment,Dispersant,Solvent,Monomer,Initiator,CMO Confidential,光阻材料成分,v.s

3、,光阻特性,成分,塗布性,顯影性,色表現(xiàn),對(duì)比度,信賴性,Profile,Paste,Polymer,Photoinitiator,Monomer,Additive,Solvent,CMO Confidential,CF,製造流程,1,廣視角產(chǎn)品,MV,A,產(chǎn)品,2,非廣視角產(chǎn)品,TN,產(chǎn)品,BM,R,G,B,ITO,PS,BM,R,G,B,ITO,MV,A,PS,BM,依材質(zhì)類型有,Resin,及,Cr BM,二種,CMO Confidential,CF,製作方法,CMO Confidential,CF,製程機(jī)制,Photolithography,Photosensitive Materia

4、ls,Substrate,Negative Type,Positive Type,MM,Binder,UV,Pigment,Photo-initiator,Soluble,Insoluble,Coating,Exposure,Development,Images,UV,Photolithography,顯影液,KOH,CMO Confidential,CF Process,優(yōu)點(diǎn),1. Process,減少,設(shè)備簡(jiǎn)化,2,光阻用量減少,1) Spin,轉(zhuǎn)速,rpm,決定膜厚,2) Spinless,吐出量,PR,值,決定膜厚,Coater,Spin,VCD,EBR,HP/CP,Exposure,

5、Development,AOI,Oven,Cassette,Coater,VCD,HP/CP,Exposure,Development,AOI,Oven,Cassette,Coater,優(yōu)點(diǎn),塗佈均勻性較好,缺點(diǎn),1,多一道製程,2,光阻用量多,浪費(fèi)光阻,增加成本,CMO Confidential,BM Process (1300,BM,遮蔽漏光區(qū),增加對(duì)比,RGB,提供色度,ITO,提供電場(chǎng)所需之電極,MV,A/DJ ITO,提供廣視角,PS,支撐,TFT/CF,所需之,Cell Gap,CMO Confidential,BM Process,鉻玻璃清洗,正光阻塗佈,1,正光阻塗佈,2,Pr

6、e-cleaner,Slit coater,Spin coater,2. BM photo line,Unpacker ,Initial cleaner,鉻膜濺鍍,素玻璃投入,1. Cr sputtering,鉻玻璃,Cr sputter,Cr glass,CrOx, CrNy, Cr,一,Cr BM process,X,X,Spinless,無(wú),CMO Confidential,BM Process,蝕刻,去光阻,紫外線曝光,顯影,烘烤,Oven,去掉邊緣光阻,EBR(Edge Bead Rinse,Aligner,Developer,Hot plate,3. Etching line,Et

7、ching,Stripping,BM pattern glass,真空乾燥,Vacuum Dryer,Pre-bake & Cool plate,X,X,Spinless,無(wú),預(yù)烘烤,HP,與冷卻,CP,CMO Confidential,BM Process,二,RBM process,素玻璃清洗,負(fù)光阻塗佈,1,負(fù)光阻塗佈,2,Pre-cleaner,Slit coater,Spin coater,X,X,Spinless,無(wú),紫外線曝光,顯影,烘烤,Oven,去掉邊緣光阻,EBR(Edge Bead Rinse,Aligner,Developer,Hot plate,真空乾燥,Vacuum

8、 Dryer,Pre-bake & Cool plate,X,預(yù)烘烤,HP,與冷卻,CP,CMO Confidential,環(huán)保意識(shí),降低設(shè)備及建廠成本,省掉,sputtering,及,Etching,的設(shè)備,簡(jiǎn)化製程流程,製程一致性,BM, RGB, PS,均使用負(fù)光阻,RBM,的優(yōu)點(diǎn),CMO Confidential,Black matrix,的功用,遮蔽,TFT,避免,pixel,以外區(qū)域漏光,增進(jìn)色彩對(duì)比性,降低面板的反射光,Black matrix,的需求,低反射率,減低外來(lái)光線的干擾,高,OD,值,阻隔,pixel,間的背光,增高對(duì)比,膜厚薄,避免角斷差發(fā)生,低,pinhole,數(shù)

9、,避免漏光,產(chǎn)生亮點(diǎn),低,particle,數(shù),增加良率,CMO Confidential,BM Inspection,1,2,3,1.Total Pitch,長(zhǎng)寸法,2.CD (Critical Dimension,3.Mark to Edge,端寸法,Substrate,R,1. OD=,log ( I / Io ) 4,2,反射率,Cr BM,3. Thickness (Resin BM,顯影後缺陷檢查,ADI (After Developer,Inspection,巨觀檢查,Macro review,Io,I,BM TP/EG,DEX1,DEY,DEX2,DEY2,1,2,3,4,5,

10、6,7,10,9,8,13,12,11,14,15,16,17,18,19,20,21,22,CMO Confidential,ILSP01: OD,Start,區(qū),平坦區(qū)各,1,點(diǎn),片片檢,避免,Start,區(qū),平坦區(qū)的,OD,值差異太大,MUIN01: Macro,確認(rèn),In-line Macro,品質(zhì)狀況,有無(wú),mura,PRIN01:AOI, CD,確認(rèn),In-line Micro,品質(zhì)狀況,避免,CD,太低,造成,LCD,漏光,RBM Layer In-line Sampling,CMO Confidential,RBM Layer off-line Sampling,SPME01:

11、 OD,避免,OD,太低,造成,LCD,漏光,MACR51: Macro,確認(rèn),BM off-line Macro,品質(zhì)狀況,CDME01:CD,端寸,Total pitch,避免,CD,太低,造成,LCD,漏光,避免,T/P,太大,or,太小,造成,LCD,對(duì)組後漏光,SUFT01:BM Thickness,控制角段差及,OD,CMO Confidential,R,G,B,Process,2300,3300,4300,BM,遮蔽漏光區(qū),增加對(duì)比,R,G,B,提供色度,ITO,提供電場(chǎng)所需之電極,MV,A/DJ ITO,提供廣視角,PS,支撐,TFT/CF,所需之,Cell Gap,CMO C

12、onfidential,R,G,B,Process,R,Layer,紅色光阻塗佈,1,紅色光阻塗佈,2,Pre-cleaner,Slit coater,Spin coater,BM pattern glass,清洗,紫外線曝光,顯影,去掉邊緣光阻,EBR (Edge Bead Rinse,Aligner,Developer,烘烤,Oven,真空乾燥,Vacuum Dryer,預(yù)烘烤,HP,與冷卻,CP,Pre-bake & Cool plate,X,X,X,Spinless,無(wú),CMO Confidential,R,G,B,Process,G,Layer,綠色光阻塗佈,1,綠色光阻塗佈,2,P

13、re-cleaner,Slit coater,Spin coater,R glass,清洗,紫外線曝光,顯影,去掉邊緣光阻,EBR (Edge Bead Rinse,Aligner,Developer,烘烤,Oven,真空乾燥,Vacuum Dryer,Pre-bake & Cool plate,X,X,預(yù)烘烤,HP,與冷卻,CP,X,Spinless,無(wú),CMO Confidential,R,G,B,Process,B,Layer,藍(lán)色光阻塗佈,1,藍(lán)色光阻塗佈,2,Pre-cleaner,Slit coater,Spin coater,R,G glass,清洗,紫外線曝光,顯影,去掉邊緣光

14、阻,EBR (Edge Bead Rinse,Aligner,Developer,烘烤,Oven,真空乾燥,Vacuum Dryer,Pre-bake & Cool plate,X,X,預(yù)烘烤,HP,與冷卻,CP,X,Spinless,無(wú),CMO Confidential,1,2,1. Pixel CD,2. Overlay,3,厚度,RGB,段差,500,600,700,800,400,20,40,60,80,100,透,過(guò),率,波 長(zhǎng) (nm,0.2,0.4,0.6,0.8,1.0,0.2,0.4,0.6,0.8,1.0,x,y,C,N,S,神,肅,4. RGB,色度量測(cè),3,R,G,B,

15、Inspection,CMO Confidential,ITO Process (5200,BM,遮蔽漏光區(qū),增加對(duì)比,RGB,提供色度,ITO,提供電場(chǎng)所需之電極,MV,A/DJ ITO,提供廣視角,PS,支撐,TFT/CF,所需之,Cell Gap,CMO Confidential,What is ITO ,ITO,I,ndium,T,in,O,xide,銦錫氧化物,90 wt. % In,2,O,3,10 wt.% SnO,2,CMO Confidential,Sputtering,濺鍍,的原理,於真空環(huán)境下,通入高電壓及,Ar/O2,混合氣體,產(chǎn)生,Ar,離子撞擊,ITO,靶材,形成銦

16、錫離子與,O,離子反應(yīng)成銦錫氧化物,ITO,濺鍍於產(chǎn)品上,Vacuum,Chamber,Substrate,Target,Plasma,Ar,e,Gas Inlet,Vacuum Pumps,2kV,CMO Confidential,ITO sputtering process,氧化銦錫膜濺鍍,ITO sputter,ITO pre-cleaner,水洗,清洗無(wú)機(jī)物,R,G,B,玻璃投入,ITO,玻璃,ITO glass,Defect Inspection,缺陷檢查機(jī),Micro 1, 4560,UV asher,清洗有機(jī)物,紫外線灰化,Repair,修補(bǔ),repair 1, 4578,CMO

17、 Confidential,ITO Inspection,1. RGB,色度量測(cè),2. Rs,電阻值,量測(cè),3,光穿透率量測(cè),4. ITO,膜厚量測(cè),5. T/P,量測(cè),500,600,700,800,400,20,40,60,80,100,透,過(guò),率,波 長(zhǎng) (nm,0.2,0.4,0.6,0.8,1.0,0.2,0.4,0.6,0.8,1.0,x,y,C,N,S,神,肅,ITO,CMO Confidential,MV,A Process (6300,BM,遮蔽漏光區(qū),增加對(duì)比,RGB,提供色度,ITO,提供電場(chǎng)所需之電極,MV,A/DJ ITO,提供廣視角,PS,支撐,TFT/CF,所需之

18、,Cell Gap,CMO Confidential,何謂廣視角,TN type,Super MV,A,CMO Confidential,MV,A Process,Multi-domain Vertical Alignment,X,Spinless,無(wú),正光阻塗佈,1,正光阻塗佈,2,Pre-cleaner,Slit coater,Spin coater,ITO glass,清洗,紫外線曝光,顯影,去掉邊緣光阻,EBR (Edge Bead Rinse,Aligner,Developer,烘烤,Oven,真空乾燥,Vacuum Dryer,Pre-bake & Cool plate,X,X,預(yù)

19、烘烤,HP,與冷卻,CP,CMO Confidential,MV,A Inspection,1,厚度量測(cè),2. Pixel CD,量測(cè),3. Overlay,4. Macro,膜厚,CMO Confidential,PS Process (7300,BM,遮蔽漏光區(qū),增加對(duì)比,RGB,提供色度,ITO,提供電場(chǎng)所需之電極,MV,A/DJ ITO,提供廣視角,PS,支撐,TFT/CF,所需之,Cell Gap,間距,PS,CF,TFT,CMO Confidential,PS Process,PS,光阻塗佈,1,PS,光阻塗佈,2,Pre-cleaner,Slit coater,Spin coat

20、er,glass,清洗,紫外線曝光,顯影,去掉邊緣光阻,EBR (Edge Bead Rinse,Aligner,Developer,烘烤,Oven,真空乾燥,Vacuum Dryer,Pre-bake & Cool plate,預(yù)烘烤與冷卻,X,X,X,Spinless,無(wú),CMO Confidential,PS Inspection,1,厚度量測(cè),2. Pixel CD,量測(cè),3. Overlay,4. Macro,膜厚,CMO Confidential,最終檢查,Final Inspection,Macro,inspection,巨觀檢查,AOI Pre-cleaner,光學(xué)檢查前清洗,

21、AOI,Auto -Opto Inspection,光學(xué)檢查,Micro 2, 7560,Micro review,拍照判,Code,Judgement & Sorting,判定與品質(zhì)分類,出貨,Shipping,非,MVA,產(chǎn)品,MVA,產(chǎn)品,Repair,修補(bǔ),repair 2, 7578,CMO Confidential,Macro Inspection,判定方法,日光燈箱,鈉,燈,檯,燈,綠,燈,鹵,素,燈,反射,透過(guò),反射,透過(guò),反射,透過(guò),反射,透過(guò),反射,透過(guò),Alignment Mark Defect,Mura,EBR Residue,髒,污,透過(guò)暗點(diǎn),透過(guò)亮點(diǎn),玻璃缺陷,殘,

22、膜,刮,傷,RGB Coin Mura,DD Coin Mura,PS Coin Mura,Discolor,Coludy Mura,註,表示主要檢驗(yàn)與判定方式,表示輔助檢驗(yàn)方式,CMO Confidential,Micro Inspection,判定方法,Defect code,設(shè)定為三碼,分述如下,第一碼,群組區(qū)分,2,Inline Macro,3,Inline AOI,4,Measurement NG,5,Micro review NG,6,Macro NG,7,Ink Repair,8,Micro review repair,CMO Confidential,Micro Inspection,判定方法,第三碼,Defect,類別,第二碼,層別,1,BM-Layer,2,R-Layer,3,