NP88N055EHE-E1-AY中文資料

1、NP88N055EHE-E1-AY中文資料 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availabil

2、ity and additional information.DATA SHEETDocument No. D14148EJ8V0DS00 (8th edition)Date Published October 2021 NS Printed in JapanThe mark The revised points can be easily searched by copying an 1999, 2021, 2021 DESCRIPTIONThese products are N-channel MOS Field Effect Transistors designed for high c

3、urrent switching applications.ORDERING INFORMATIONPART NUMBERLEAD PLATINGPACKING PACKAGENP88N055EHE-E1-AY Note1, 2 NP88N055EHE-E2-AY Note1, 2TO-263 (MP-25ZJ) typ. 1.4 gNP88N055KHE-E1-AY Note1 NP88N055KHE-E2-AYNote1Pure Sn (Tin)Tape 800 p/reelTO-263 (MP-25ZK) typ. 1.5 gNP88N055CHE-S12-AZNote1, 2Sn-Ag

4、-CuTO-220 (MP-25) typ. 1.9 g NP88N055DHE-S12-AYNote1, 2TO-262 (MP-25 Fin Cut) typ. 1.8 g NP88N055MHE-S18-AY Note1 TO-220 (MP-25K) typ. 1.9 g NP88N055NHE-S18-AYNote1 Pure Sn (Tin) Tube 50 p/tubeTO-262 (MP-25SK) typ. 1.8 gNotes 1. Pb-free (This product does not contain Pb in the external electrode.)2.

5、 Not for new designFEATURES? Channel temperature 175 degree rated ? Super low on-state resistanceR DS(on) = 5.3 m MAX. (V GS = 10 V, I D = 44 A) ? Low input capacitance C iss = 7600 pF TYP. ? Built-in gate protection diode(TO-220) (TO-262)(TO-263)ABSOLUTE MAXIMUM RATINGS (T A = 25C)Drain to Source V

6、oltage (V GS = 0 V) V DSS 55 V Gate to Source Voltage (V DS = 0 V) V GSS20 V Drain Current (DC) (T C = 25C) Note1I D(DC)88 A Drain Current (Pulse) Note2I D(pulse)352 ATotal Power Dissipation (T A = 25C) P T1 1.8 W Total Power Dissipation (T C = 25C) P T2 288 WCChannel Temperature T ch 175Storage Tem

7、perature T stg?55 to +175 CSingle Avalanche Current Note3I AS 65/88A Single Avalanche Energy Note3E AS 422/15 mJ Notes 1. Calculated constant current according to MAX. allowable channel temperature.2. PW 10 s, Duty Cycle 1%3. Starting T ch = 25C, V DD = 28 V, R G = 25 , V GS = 20 0 V (See Figure4.)

8、THERMAL RESISTANCEChannel to Case Thermal Resistance R th(ch-C) 0.52 C/WChannel to Ambient Thermal Resistance R th(ch-A) 83.3 C/W2Data Sheet D14148EJ8V0DSData Sheet D14148EJ8V0DS3ELECTRICAL CHARACTERISTICS (T A = 25C)CHARACTERISTICS SYMBOLTEST CONDITIONSMIN. TYP. MAX.UNIT Zero Gate Voltage Drain Cur

9、rent I DSS V DS = 55 V, V GS = 0 V 10 A Gate Leakage CurrentI GSS V GS = 20 V, V DS = 0 V 10AGate to Source Threshold Voltage V GS(th) V DS = V GS , I D = 250 A 2.0 3.0 4.0 V Forward Transfer Admittance | y fs | V DS = 10 V, I D = 44 A 30 60SDrain to Source On-state Resistance R DS(on)V GS = 10 V, I

10、 D = 44 A 4.25.3m Input Capacitance C iss 7600 11400pFOutput CapacitanceC oss 11001700pFReverse Transfer Capacitance C rss V DS = 25 V, V GS = 0 V, f = 1 MHz480 870 pFTurn-on Delay Time t d(on) 42 93 nsRise Timet r 26 66 nsTurn-off Delay Time t d(off) 120 240 ns Fall Timet fV DD = 28 V, I D = 44 A,

11、V GS = 10 V, R G = 1 32 81 nsTotal Gate Charge Q G 130 200 nC Gate to Source Charge Q GS 31 nCGate to Drain Charge Q GD V DD = 44 V,V GS = 10 V, I D = 88 A49 nC Body Diode Forward Voltage V F(S-D)I F = 88 A, V GS = 0 V 1.0 VReverse Recovery Time t rr 62 ns Reverse Recovery ChargeQ rrI F = 88 A, V GS

12、 = 0 V, di/dt = 100 A/s120 nC TEST CIRCUIT 3 GATE CHARGEV GS = 20 0 TEST CIRCUIT 1 AVALANCHE CAPABILITYL DDTEST CIRCUIT 2 SWITCHING TIMEL DD= 1 s Duty Cycle 1% Data Sheet D14148EJ8V0DS4TYPICAL CHARACTERISTICS (T A = 25C)Figure2. TOTAL POWER DISSIPATION vs. CASE TEMPERATURET C - Case Temperature - CP

13、 T - T o t a l P o w e r D i s s i p a t i o n - W0025507510012515017520035030025020215010050Figure1. DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREAd T - Pe r c e n t a g e of R a t e d P o w e r - %0025507510012515017520020406080100 Figure4. SINGLE AVALANCHE ENERGY DERATING FACTORStarting T ch

14、 - Starting Channel Temperature - C S i n g l e P u l s e A v a l a n c h e E n e r g y - m J 400800500300202100T C - Case Temperature - CPW - Pulse Width - sFigure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTHr t h (t ) - T r a n s i e n t T h e r m a l R e s i s t a n c e - C /W100.010.111001000

15、1 m10 m100 m1101001 00010100Single Pulse T C = 25CFigure3. FORWARD BIAS SAFE OPERATING AREA V DS - Drain to Source Voltage - V I D - D r a i n C u r r e n t - A1011000.11000 Data Sheet D14148EJ8V0DS5 Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Figure10. DRAIN TO SOURCE ON

16、-STATE RESISTANCE vs. DRAIN CURRENTFigure11. GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE T ch - Channel Temperature - CV G S (t h ) - G a t e t o S o u r c e T h r e s h o l d V o l t a g e - V1.0V DS = V GS I D = 250 A2.03.04.0?50050100150 I D - Drain Current - A| y f s | - F o r w a r

17、 d T r a n s f e r A d m i t t a n c e - SV GS - Gate to Source Voltage - VR D S (o n ) - D r a i n t o S o u r c e O n -s t a t e R e s i s t a n c e - m 01010051I D - Drain Current - A R D S (o n ) - D r a i n t o S o u r c e O n -s t a t e R e s i s t a n c e - m 5 Figure6. FORWARD TRANSFER CHARA

18、CTERISTICS I D - D r a i n C u r r e n t - A10.10.0110100Figure7. DRAIN CURRENT vs.DRAIN TO SOURCE VOLTAGEV DS - Drain to Source Voltage - VI D - D r a i n C u r r e n t - A Data Sheet D14148EJ8V0DS6 Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURER D S (o n ) - D r a i n t o S

19、o u r c e O n -s t a t e R e s i s t a n c e - m Figure13. SOURCE TO DRAIN DIODE FORWARD VOLTAGEC i s s , C o s s , C r s s - C a p a c i t a n c e - p F100100010000100000V G S - G a t e t o S o u r c e V o l t a g e - VI F - Diode Forward Current - At r r - R e v e r s e R e c o v e r y T i m e - n

20、 s110Q G - Gate Charge - nC2 410001006810 Data Sheet D14148EJ8V0DS7PACKAGE DRAWINGS (Unit: mm) Note NoteNote Note Not for new designData Sheet D14148EJ8V0DS8 EQUIVALENT CIRCUITBody DiodeDiodeDrain Remark The diode connected between the gate and source of the transistor serves as a protector against

21、ESD.When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.Data Sheet D14148EJ8V0DS9TAPE INFORMATIONThere are two types (-E1, -E2) of taping depending on the direction of the device.Reel side MARK

22、ING INFORMATIONLot codePb-free plating marking Abbreviation of part number RECOMMENDED SOLDERING CONDITIONSThese products should be soldered and mounted under the following recommended conditions.For soldering methods and conditions other than those recommended below, please contact an NEC Electroni

23、cs sales representative.For technical information, see the following website.Semiconductor Device Mount Manual (Soldering Method Soldering ConditionsRecommended Condition SymbolInfrared reflow MP-25ZJ, MP-25ZKMaximum temperature (Packages surface temperature): 260C or below Time at maximum temperatu

24、re: 10 seconds or less Time of temperature higher than 220C: 60 seconds or less Preheating time at 160 to 180C: 60 to 120 seconds Maximum number of reflow processes: 3 timesMaximum chlorine content of rosin flux (percentage mass): 0.2% or lessIR60-00-3 Wave solderingMP-25, MP-25K, MP-25SK, MP-25 Fin

25、 Cut Maximum temperature (Solder temperature): 260C or below Time: 10 seconds or lessMaximum chlorine content of rosin flux: 0.2% (wt.) or less THDWS Partial heating MP-25ZJ, MP-25ZK, MP-25K, MP-25SK Maximum temperature (Pin temperature): 350C or below Time (per side of the device): 3 seconds or les

26、sMaximum chlorine content of rosin flux: 0.2% (wt.) or less P350 Partial heating MP-25, MP-25 Fin CutMaximum temperature (Pin temperature): 300C or below Time (per side of the device): 3 seconds or lessMaximum chlorine content of rosin flux: 0.2% (wt.) or lessP300 Caution Do not use different solder

27、ing methods together (except for partial heating). The information in this document is current as of October, 2021. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date

28、specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.No part of this document may be copied or reproduced in any form or by any means without the

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