TFTLCD工藝制程簡介

1、1會計學TFTLCD工藝制程簡介工藝制程簡介周剛09-4-19編寫ContentsArray process Module ProcessCell Process TFT LCD 客戶導向，團結協(xié)作 精益生產(chǎn)，精益管理q Team workTFT-LCDCOGRecipeOICSTKODFADIq TFT-LCD ENGLISH一一：Array Process q Organizationq Array Layout TFT ARRAY PROCESSCCITO pixel electrodeCross -section C-CSelect lineData lineStorage capac

2、itorCCITO pixel electrodeCross -section C-CSelect lineData lineStorage capacitora-Si TFTTFT Structure Deposit and pattern gate metal Functions: Gate of TFT Select lines Bottom electrode of storage capacitor Metal options: Ti/Al/Ti Al/Mo Cr MoCCCross-section CCa-Si TFT array process step 1 Deposition

3、 of SiN/a-Si/n+ by PECVD, patterning of a-Si SiN is gate dielectric and storage capacitor dielectric Selective etch of a-Si SiN is not etchedCCSiNa-Si/n+a-Si TFT array process step 3 Deposition and patterning of source/drain metal Functions: Source and drain metal Data line metal Metal options Ti/Al

4、/Ti or Ti/Al Cr Mo or Mo/Al Back etch of n+ a-Si from channel areaCC Deposition and patterning of passivation SiN by PECVD Function: Passivate TFTCCa-Si TFT array process step 5 Deposition and patterning of ITO Function: Pixel electrode Top electrode of storage capacitorCCITO pixel electrodeCross-se

5、ction C-CSelect lineData lineStorage capacitorCCITO pixel electrodeCross-section C-CSelect lineData lineStorage capacitora-Si TFT TFT ARRAY PROCESS_PVD/CVDUsed for ITO (Indium Tin Oxide transparent conductor) and for metals (Al, Mo, Cr, etc.)Schematic diagram of DC powered sputter deposition equipme

6、nt(glow discharge)ground-V (DC)VacuumCathode shield-100-1000VPVD原理ACLSLoadlockT/CP/CP/CP/CP/CP/CPECVD (即等離子體增強化學氣相沉積即等離子體增強化學氣相沉積) 工作原理工作原理:采用等離子輔助對化合物進行催化分解采用等離子輔助對化合物進行催化分解目的目的: 利用等離子體輔助活化反應氣體利用等離子體輔助活化反應氣體,降低反應溫度降低反應溫度,改善薄膜質量改善薄膜質量LayerFeed gasMaterialTempFunction3 LayerSiH4, N2, NH3A-SiNx320350G

7、ate insulator SiH4, H2a-SiSemiconductorSiH4, PH3, H2n+ a-SiContact layer at source and drain1 LayerSiH4, N2, NH3A-SiNx270290 passivation溫度氣體流量比 (Si:H,N:H,Si:N)RFPressure Spacing (上下電極間距)影響成膜工藝的主要參數(shù)周剛09-4-19編寫 M/A EUVMAINT EXT/COL4U/CU/CU/CU/C C/SSCRHP3HP3HP1HP3HP1COL1COL1 M/A DP DEVELOPEREXTPSPSEXT

8、M/A HP2HP2I/FBUFCOL3TITLER/EE EXTEXTHP2COL2EXTPSPSPSPSOUTINOUTINOUT30600mm6000mmHeight:2450mm5585mm TFT ARRAY PROCESS_PHOTOSLIT COATEREXPOSURECANON MPA6000 JUMPstageNozzleSlit Coater & DPDPMPA6000 Exposure unitArrayCFTP & OL MarkOLTP TFT ARRAY PROCESS_WET TFT ARRAY PROCESS_DRYCassette statio

9、nL/LT/CP/CP/CP/CP/CDET原理利用Plasma將反應氣體解離，ion轟擊與radicals反應將Film移除，真空下進行RIE：指的是：指的是Reactive ion etching，即反應離子刻蝕，即反應離子刻蝕 目的 蝕刻終點檢測。原理利用從蝕刻中開始到結束為止特定的波長的光強度的變化，檢測出蝕刻的最合適的終點。plasma13.56 MHz検出器Optical fiberArray Tester將TFT Array Panel進行測試，如果有短路（SHORT),或是短路(OPEN),就將坐標點記錄下來，傳給Laser Repair（激光修復機）修復之1.測量元件導通電流

10、測量元件導通電流,ION2.測量元件截止電流測量元件截止電流,IOFF3.測量切入測量切入(CUT IN)電壓電壓VT4.測量電壓電流曲線測量電壓電流曲線TV CURVE電壓電壓V電流電流I切入電壓切入電壓IOFFIONTEGTAKE A BREAKTAKE A BREAKQUESTION AND ANSWER周剛09-4-19編寫二二：Cell ProcessCFCFTFTTFTPI LinePI LineRubbing LineRubbing LineCFCFTFTTFTODF LineODF LineCELLCELLCFCFTFTTFTCELL工藝流程APR: Asahi Photose

11、nsitive ResinPI CoaterPI Coater要求特性RubbingRubbing 動作動作Spacer SprayShort DispenserSeal DispenserLC DispenserUV CUREAssemblyODF制成12ScriberZero level detect工作臺運動方向及速度切割過程1 1. .2 2. .3 3. .4 4. .5 5. .6 6. .E-C-PLength Length GrindingGrindingWidth Width GrindingGrindingInInOutOutEdge Grind (Skip)Cleaner

12、POL Attach側面動作示意正面動作示意POL 周剛09-4-19編寫三三：Module ProcessMODULE工藝流程圖工藝流程圖ACFFOG UV LINKCOGIC 邦定鏡檢AOI檢測FOGACF 粘貼FOG 邦定鏡檢電測1封膠膠帶粘貼補強UV固化組裝副屏電測背光源檢測背光源組裝主副屏焊接背光源焊接主副屏組裝外框組裝外框焊接觸摸屏組裝觸摸屏焊接保護膠帶粘貼最終電測老化老化包裝包裝出貨出貨 JUMPModule Process FlowDriver Connection to GlassChip on Film (COF) or Chip on Glass (COG)ACFCOGC

13、OG ProcessFPCFPC ProcessUVAging Conditions:50 deg. C2 hrsAging周剛09-4-19編寫ContentsArray process Module ProcessCell Process q Array Layout TFT ARRAY PROCESSCCITO pixel electrodeCross -section C-CSelect lineData lineStorage capacitorCCITO pixel electrodeCross -section C-CSelect lineData lineStorage capacitora-Si TFTTFT Structure Deposit and pattern gate metal Functions: Gate of TFT Select lines Bottom electrode of storage capacitor Metal options: Ti/Al/