磁控濺射法制備透明導(dǎo)電薄膜.

1、LOGOPreparation of Transparent Conductive Films via Magnetron Sputtering By: By: 王超王超 梁素珍梁素珍 柳守杰柳守杰 楊曉艷楊曉艷 宋亞珍宋亞珍Company LogoContentsIntroductionHistory of Magnetron Sputtering Basic Physical PrincipleMechanism of Thin Film GrowthPreparation of TCFCompany LogoMagnetron Sputtering , invented in 1970s

2、 , has become one of the most widely-used methods of thin film preparation . Due to its relatively high deposition rate and film quality , it has been successfully applied in numerous fields , such as integrated circuit process , specific functional coating materials and material modification. IComp

3、any LogovHard , wear resistant coatingsvLow friction coatingsvCorrosion resistant coatingsvDecorative coatingsvCoating with specific optical , or electrical propertiesUse of Magnetron SCompany LogoLathe ToolsTiAlN or TiAlN+WC film make it available for lathe tools to work in the temperature higher t

4、han 500oCCompany LogoOptical CCompany LogoDecorative CCompany Logov 1852,W.R. Grove used a tip of wire as the coating source and sputtered a deposit onto a highly polished silver surface. It is the first time that sputtering was studied.v 1930s, Penning developed an “electron trap” to confine electr

5、ons near a surface using a combination of electric and magnetic fields. v Early 1970s, conventional or balanced magnetron sputtering was introduced.v 1985, Window and Savvides develop the concept of “unbalanced magnetron sputtering”History of Magnetron SCompany LogoBasic Principle of Magnetron Sputt

6、eringXAFS Group , NSRLCompany LCompany LCompany LCompany LCompany LCompany LCompany LCompany LCompany LCompany LogoGlow DCompany LogoMagnetron sputtering works in the area of abnormal glow discharge. So the current density can be adjusted by changing the voltage. Company LogoPlasma Generated by Glow

7、 Discharge Company LogoPlasma Generated by Glow Discharge Company LogoRemoval of the Atom on the TCompany LogovTarget is bombarded by energetic ions generated in glow discharge plasma.vTarget atoms are removed and then condense on the substrate.vSecondary electrons are emitted and play an important

8、role in maintaining the plasma.Steps ICompany LogoBalanced and unbalanced Magnetron SCompany LogoMechanism of Thin Film GCompany Logo1Absorbed with exchanging energy2Absorbed, settle on the surface, and then desorbed 3Reflectedwithout exchanging energyACompany Logo)/exp(0RTEdare temperatuamic thermo

9、dynis constant gas ideal is desorption ofenergy activation theis atoms surface theoffrequency vibration theis ,/10TREdAverage Adsorption TCompany LogoSurface DiffusionThe absorbed atoms horizontal movement on the surface 2/ )exp(0kTEEaxDdAverage diffusion distance :diffusion ofenergy activation thei

10、s desorption ofenergy activation theis DdEECompany LogoNucleationResearches show the critical free energy barrier of nucelation becomes higher in high temperature. So high deposition temperature is preferred for monocrystalline film and low deposition temperature is preferred for polycrystalline fil

11、m. Company LogoGrowth of FilmVolmer-Weber ModeFrank-van der Merwe ModeStranski-Krastanov Mode Company LogoVolmer-Weber Modee.g. Au film on SCompany LogoFrank-van der Merwe Modee.g. Si film on SCompany LogoStranski-Krastanov Modee.g. Ag film on SCompany LogoTransparent conducting films (TCFs) have be

12、en fabricated from both inorganic and organic materials.Transparent Conductive FCompany LogoInorganic TCFs Inorganic films typically are made up of a layer of TCO (transparent conducting oxide), generally in the form of indium tin oxide (ITO), fluorine doped tin oxide (FTO), and doped zinc Company L

13、ogoOrganic TCFsOrganic films are being developed using carbon nanotube networks and graphene, which can be fabricated to be highly transparent in the infrared, along with polymer networks such as poly(3,4 ethlyenedioxythiophene) and its Company LogoUse of TCFsLCDTouch SCompany LogoPreparation of Ga

14、Doped ZnO TCF:DC reactive magnetron sputteringTarget Zn alloyed 4 at.% GaZn alloyed 4 at.% GaPressure of Vacuum Chamber 3 31010-3 -3 PaPaSputtering Gas High purityHigh purity Ar and OAr and O2 2 (11:1)(11:1)Total Deposited Pressure 1.0Pa1.0PaSubstrate-to-Target Distance 60 mm60 Company LogoRCompany

15、LogoXRDCompany LogoSEMCompany LogoRCompany LogoReference1 X. Bie, J.G. Lu *. Transparent conductive ZnO : Ga films prepared by DC reactive magnetron sputtering at low temperature J. Applied Surface Science 256 (2009) :289-2932 Highly transparent and conductive rare earth-doped ZnO thin films prepare

16、d by magnetron sputteringJ. Thin Solid Films 366 (2000) :63-683 Q.P. Wang *, X.J. Zhang, G.Q. Wang, S. H. Influence of excitation light wavelength on the photoluminescence properties for ZnO films prepared by magnetron sputtering J. Applied Surface Science 254 (2008) :510051044 P.J. Kelly*, R.D. Arn

17、ell. Magnetron sputtering: a review of recent developments and applicationsJ. Vacuum 56 (2000):159-1725 S. Mandal, R.K. Singha, A. Dhar, S.K. Ray. Optical and structural characteristics of ZnO thin films grown by rf magnetron sputtering. Materials Research BulletinJ 43 (2008) :244-2506 P. F. Carcia,a) R. S. McLean, M. H. Reilly.Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering ,APPLIED PHYSICS LETTERSJ 256(2009):1117-11197 Polcar T, Kubart T, Malainho E, et al. Na