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SemiconductorManufacturingTechnology
MichaelQuirk&JulianSerda
?October2001byPrenticeHall
Chapter13
Photolithography:SurfacePreparationtoSoftBake?2000byPrenticeHallSemiconductorManufacturingTechnologybyMichaelQuirkandJulianSerda
SemiconductorManufacturingTeObjectivesAfterstudyingthematerialinthischapter,youwillbeableto:1. Explainthebasicconceptsforphotolithography,includingprocessoverview,criticaldimensiongenerations,lightspectrum,resolutionandprocesslatitude.2. Discussthedifferencebetweennegativeandpositivelithography.3. Stateanddescribetheeightbasicstepstophotolithography.4. Explainhowthewafersurfaceispreparedforphotolithography.5. Describephotoresistanddiscussphotoresistphysicalproperties.6. Discussthechemistryandapplicationsofconventionali-linephotoresist.7. DescribethechemistryandbenefitsofdeepUV(DUV)resists,includingchemicallyamplifiedresists.8. Explainhowphotoresistisappliedinwafermanufacturing.9. Discussthepurposeofsoftbakeandhowitisaccomplishedinproduction.
ObjectivesAfterstudyingthemWaferFabricationProcessFlowImplantDiffusionTest/SortEtchPolishPhotoCompletedwaferUnpatternedwaferWaferstartThinFilmsWaferfabrication(front-end)UsedwithpermissionfromAdvancedMicroDevicesFigure13.1
WaferFabricationProcessFlowPatterningProcessPhotomaskReticleCriticalDimensionGenerationsLightSpectrumResolutionOverlayAccuracyProcessLatitudePhotolithographyConcepts
PatterningProcessPhotolithogrPhotomaskandReticleforMicrolithographyPhotographprovidedcourtesyofAdvancedMicroDevices4:1Reticle1:1MaskPhoto13.1
PhotomaskandReticleforMicrThreeDimensionalPatterninPhotoresistLinewidthSpaceThicknessSubstratePhotoresistFigure13.2
ThreeDimensionalPatterninPSectionoftheElectromagneticSpectrumVisibleRadiowavesMicro-wavesInfraredGammaraysUVX-raysf(Hz)1010101010101010101046810121416221820(m)420-2-4-6-8-14-10-1210101010101010101010365436405248193157ghiDUVDUVVUVl(nm)CommonUVwavelengthsusedinopticallithography.Figure13.3
SectionoftheElectromagneticImportantWavelengthsforPhotolithographyExposureTable13.1
ImportantWavelengthsforPhotImportanceofMaskOverlayAccuracyPMOSFETNMOSFETCrosssectionofCMOSinverterTopviewofCMOSinverterThemaskinglayersdeterminetheaccuracybywhichsubsequentprocessescanbeperformed.Thephotoresistmaskpatternpreparesindividuallayersforproperplacement,orientation,andsizeofstructurestobeetchedorimplanted.Smallsizesandlowtolerancesdonotprovidemuchroomforerror.Figure13.4
ImportanceofMaskOverlayAccPhotolithographyProcessesNegativeResistWaferimageisoppositeofmaskimageExposedresisthardensandisinsolubleDeveloperremovesunexposedresistPositiveResistMaskimageissameaswaferimageExposedresistsoftensandissolubleDeveloperremovesexposedresist
PhotolithographyProcessesNegaNegativeLithographyUltravioletlightIslandAreasexposedtolightbecomecrosslinkedandresistthedeveloperchemical.Resultingpatternaftertheresistisdeveloped.WindowExposedareaofphotoresistShadowonphotoresistChromeislandonglassmaskSiliconsubstratePhotoresistOxidePhotoresistOxideSiliconsubstrateFigure13.5
NegativeLithographyUltraviolePositiveLithographyFigure13.6
photoresistsiliconsubstrateoxideoxidesiliconsubstratephotoresistUltravioletlightIslandAreasexposedtolightaredissolved.Resultingpatternaftertheresistisdeveloped.ShadowonphotoresistExposedareaofphotoresistChromeislandonglassmaskWindowSiliconsubstratePhotoresistOxidePhotoresistOxideSiliconsubstratePositiveLithographyFigure13.RelationshipBetweenMaskandResistDesiredphotoresiststructuretobeprintedonwaferWindowSubstrateIslandofphotoresistQuartzChromeIslandMaskpatternrequiredwhenusingnegativephotoresist(oppositeofintendedstructure)Maskpatternrequiredwhenusingpositivephotoresist(sameasintendedstructure)Figure13.7
RelationshipBetweenMaskandClearFieldandDarkFieldMasksSimulationofcontactholes(positiveresistlithography)Simulationofmetalinterconnectlines(positiveresistlithography)ClearFieldMaskDarkFieldMaskFigure13.8
ClearFieldandDarkFieldMasEightStepsofPhotolithographyTable13.2
EightStepsofPhotolithographEightStepsofPhotolithography8)Developinspect5)Post-exposurebake6)Develop7)HardbakeUVLightMask4)AlignmentandExposureResist2)Spincoat3)Softbake1)VaporprimeHMDSFigure13.9
EightStepsofPhotolithographPhotolithographyTrackSystemPhotocourtesyofAdvancedMicroDevices,TELTrackMarkVIIIPhoto13.2
PhotolithographyTrackSystemPVaporPrimeTheFirstStepofPhotolithography:PromotesGoodPhotoresist-to-WaferAdhesionPrimesWaferwithHexamethyldisilazane,HMDSFollowedbyDehydrationBakeEnsuresWaferSurfaceisCleanandDry
VaporPrimeTheFirstStepofPSpinCoatProcessSummary:WaferisheldontovacuumchuckDispense~5mlofphotoresistSlowspin~500rpmRampupto~3000to5000rpmQualitymeasures:timespeedthicknessuniformityparticlesanddefectsVacuumchuckSpindleconnectedtospinmotorTovacuumpumpPhotoresistdispenserFigure13.10
SpinCoatProcessSummary:VacuuSoftbakeCharacteristicsofSoftBake:ImprovesPhotoresist-to-WaferAdhesionPromotesResistUniformityonWaferImprovesLinewidthControlDuringEtchDrivesOffMostofSolventinPhotoresistTypicalBakeTemperaturesare90to100°CForAbout30SecondsOnaHotPlateFollowedbyCoolingSteponColdPlate
SoftbakeCharacteristicsofSoAlignmentandExposureProcessSummary:Transfersthemaskimagetotheresist-coatedwaferActivatesphoto-sensitivecomponentsofphotoresistQualitymeasures:linewidthresolutionoverlayaccuracyparticlesanddefectsUVlightsourceMaskResistFigure13.11
AlignmentandExposureProcessPost-ExposureBakeRequiredforDeepUVResistsTypicalTemperatures100to110°ConahotplateImmediatelyafterExposureHasBecomeaVirtualStandardforDUVandStandardResists
Post-ExposureBakeRequiredforPhotoresistDevelopmentProcessSummary:SolubleareasofphotoresistaredissolvedbydeveloperchemicalVisiblepatternsappearonwafer -windows -islandsQualitymeasures: -lineresolution -uniformity -particlesanddefectsVacuumchuckSpindleconnectedtospinmotorTovacuumpumpDevelopdispenserFigure13.12
PhotoresistDevelopmentProcessHardBakeAPost-DevelopmentThermalBakeEvaporateRemainingSolventImproveResist-to-WaferAdhesionHigherTemperature(120to140°C)thanSoftBake
HardBakeAPost-DevelopmentThDevelopInspectInspecttoVerifyaQualityPatternIdentifyQualityProblems(Defects)CharacterizethePerformanceofthePhotolithographyProcessPreventsPassingDefectstoOtherAreasEtchImplantReworkMisprocessedorDefectiveResist-coatedWafersTypicallyanAutomatedOperation
DevelopInspectInspecttoVeriVaporPrimeWaferCleaningDehydrationBakeWaferPrimingPrimingTechniquesPuddleDispenseandSpinSprayDispenseandSpinVaporPrimeandDehydrationBake
VaporPrimeWaferCleaningEffectofPoorResistAdhesionDuetoSurfaceContaminationFigure13.13
ResistliftoffEffectofPoorResistAdhesionHMDSPuddleDispenseandSpinPuddleformationSpinwafertoremoveexcessliquidFigure13.14
HMDSPuddleDispenseandSpinPHMDSHotPlateDehydrationBake
andVaporPrimeWaferExhaustHotplateChambercoverProcessSummary:DehydrationbakeinenclosedchamberwithexhaustHexamethyldisilazane(HMDS)Cleananddrywafersurface(hydrophobic)Temp~200to250CTime~60sec.Figure13.15
HMDSHotPlateDehydrationBakThePurposeofPhotoresistinWaferFabTotransferthemaskpatterntothephotoresistonthetoplayerofthewafersurfaceToprotecttheunderlyingmaterialduringsubsequentprocessinge.g.etchorionimplantation.
ThePurposeofPhotoresistinSuccessiveReductionsinCDsLeadtoProgressiveImprovementsinPhotoresistBetterimagedefinition(resolution).Betteradhesiontosemiconductorwafersurfaces.Betteruniformitycharacteristics.Increasedprocesslatitude(lesssensitivitytoprocessvariations).
SuccessiveReductionsinCDsLPhotoresistTypesofPhotoresistNegativeVersusPositivePhotoresistsPhotoresistPhysicalPropertiesConventionalI-LinePhotoresistsNegativeI-LinePhotoresistsPositiveI-LinePhotoresistsDeepUV(DUV)PhotoresistsPhotoresistDispensingMethodsSpinCoat
PhotoresistSpinCoatTypesofPhotoresistsTwoTypesofPhotoresistPositiveResistNegativeResistCDCapabilityConventionalResistDeepUVResistProcessApplicationsNon-criticalLayersCriticalLayers
TypesofPhotoresistsTwoTypesNegativeVersusPositiveResistsNegativeResistWaferimageisoppositeofmaskimageExposedresisthardensandisinsolubleDeveloperremovesunexposedresistPositiveResistMaskimageissameaswaferimageExposedresistsoftensandissolubleDeveloperremovesexposedresistResolutionIssuesClearFieldVersusDarkFieldMasks
NegativeVersusPositiveResisPhotoresistPhysicalCharacteristicsResolutionContrastSensitivityViscosityAdhesionEtchresistanceSurfacetensionStorageandhandlingContaminantsandparticles
PhotoresistPhysicalCharacterResistContrastPoorResistContrastSlopedwallsSwellingPoorcontrastResistFilmGoodResistContrastSharpwallsNoswellingGoodcontrastResistFilmFigure13.16
ResistContrastPoorResistConSurfaceTension Lowsurfacetension Highsurfacetension fromlowmolecular fromhighmolecular forces forcesFigure13.17
SurfaceTension LowsurfaceteComponentsofConventionalPhotoresistAdditives:chemicalsthatcontrolspecificaspectsofresistmaterialSolvent:givesresistitsflowcharacteristicsSensitizers:photosensitivecomponentoftheresistmaterialResin:mixofpolymersusedasbinder;givesresistmechanicalandchemicalpropertiesFigure13.18
ComponentsofConventionalPhoNegativeResistCross-LinkingAreasexposedtolightbecomecrosslinkedandresistthedeveloperchemical.Unexposedareasremainsolubletodeveloperchemical.Pre-exposure-photoresistPost-exposure-photoresistPost-develop-photoresistUVOxidePhotoresistSubstrateCrosslinksUnexposedExposedSolubleFigure13.19
NegativeResistCross-LinkingAPACasDissolutionInhibitor
inPositiveI-LineResistResistexposedtolightdissolvesinthedeveloperchemical.Unexposedresist,containingPACs,remaincrosslinkedandinsolubletodeveloperchemical.Pre-exposure+photoresistPost-exposure+photoresistPost-develop+photoresistUVOxidePhotoresistSubstrateSolubleresistExposedUnexposedPACFigure13.20
PACasDissolutionInhibitor
GoodContrastCharacteristicsofPositiveI-linePhotoresistPositivePhotoresist:SharpwallsNoswellingGoodcontrastFilmResistFigure13.21
GoodContrastCharacteristicsDUVEmissionSpectrum*Intensityofmercurylampistoolowat248nmtobeusableinDUVphotolithographyapplications.Excimerlasers,suchasshownontheleftprovidemoreenergyforagivenDUVwavelength.MercurylampspectrumusedwithpermissionfromUSHIOSpecialtyLightingProductsFigure13.22
100806040200248nmRelativeIntensity(%)KrFlaseremissionspectrumEmissionspectrumofhigh-intensitymercurylamp120100806040200200 300 400 500 600Wavelength(nm)RelativeIntensity(%)g-line436nmi-line365nmh-line405nmDUV*248nmDUVEmissionSpectrum*IntensiChemicallyAmplified(CA)DUVResistResistexposedtolightdissolvesinthedeveloperchemical.UnexposedresistremainscrosslinkedandPAGsareinactive.Pre-exposure+CAphotoresistPost-exposure+CAphotoresistPost-develop+CAphotoresistUVOxidePhotoresistSubstrateUnchangedExposedUnexposedAcid-catalyzedreaction(duringPEB)PAGPAGPAGPAGH+PAGPAGPAGH+H+PAGPAGFigure13.23
ChemicallyAmplified(CA)DUVExposureStepsforChemically-AmplifiedDUVResistTable13.5
ExposureStepsforChemically-StepsofPhotoresistSpinCoating3)Spin-off4)Solventevaporation1)Resistdispense2)Spin-upFigure13.24
StepsofPhotoresistSpinCoatWaferTransferSystemLoadstationTransferstationVaporprimeResistcoatDevelopandrinseEdge-beadremovalSoftbakeCoolplateCoolplateHardbakeWaferstepper(Alignment/Exposuresystem)AutomatedWaferTrackforPhotolithographyFigure13.25
WaferTransferSystemLoadstatPhotoresistDispenseNozzleZYXqResistdispensernozzleBottomsideEBRVacuumVacuumchuckSpinmotorWaferExhaustDrainResistflowStainlesssteelbowlAirflowAirflowNozzlepositioncanbeadjustedinfourdirections.Figure13.26
PhotoresistDispenseNozzleZYXResistSpinSpeedCurveUsedwithpermissionfromJSRMicroelectronics,Inc.Figure13.27
800007000060000500004000030000200001000001000 2000 3000 4000 5000 6000 7000SpinSpeed(RPM)SpinSpeedCurveofIX300ResistThickness(?)21cP110cP70cPResistSpinSpeedCurveUsedwiSoftBakeonVacuumHotPlatePurposeofSoftBake:PartialevaporationofphotoresistsolventsImprovesadhesionImprovesuniformityImprovesetchresistanceImproveslinewidthcontrolOptimizeslightabsorbancecharacteristicsofphotoresistHotplateWaferSolventexhaustChambercoverFigure13.28
SoftBakeonVacuumHotPlatePSemiconductorManufacturingTechnology
MichaelQuirk&JulianSerda
?October2001byPrenticeHall
Chapter13
Photolithography:SurfacePreparationtoSoftBake?2000byPrenticeHallSemiconductorManufacturingTechnologybyMichaelQuirkandJulianSerda
SemiconductorManufacturingTeObjectivesAfterstudyingthematerialinthischapter,youwillbeableto:1. Explainthebasicconceptsforphotolithography,includingprocessoverview,criticaldimensiongenerations,lightspectrum,resolutionandprocesslatitude.2. Discussthedifferencebetweennegativeandpositivelithography.3. Stateanddescribetheeightbasicstepstophotolithography.4. Explainhowthewafersurfaceispreparedforphotolithography.5. Describephotoresistanddiscussphotoresistphysicalproperties.6. Discussthechemistryandapplicationsofconventionali-linephotoresist.7. DescribethechemistryandbenefitsofdeepUV(DUV)resists,includingchemicallyamplifiedresists.8. Explainhowphotoresistisappliedinwafermanufacturing.9. Discussthepurposeofsoftbakeandhowitisaccomplishedinproduction.
ObjectivesAfterstudyingthemWaferFabricationProcessFlowImplantDiffusionTest/SortEtchPolishPhotoCompletedwaferUnpatternedwaferWaferstartThinFilmsWaferfabrication(front-end)UsedwithpermissionfromAdvancedMicroDevicesFigure13.1
WaferFabricationProcessFlowPatterningProcessPhotomaskReticleCriticalDimensionGenerationsLightSpectrumResolutionOverlayAccuracyProcessLatitudePhotolithographyConcepts
PatterningProcessPhotolithogrPhotomaskandReticleforMicrolithographyPhotographprovidedcourtesyofAdvancedMicroDevices4:1Reticle1:1MaskPhoto13.1
PhotomaskandReticleforMicrThreeDimensionalPatterninPhotoresistLinewidthSpaceThicknessSubstratePhotoresistFigure13.2
ThreeDimensionalPatterninPSectionoftheElectromagneticSpectrumVisibleRadiowavesMicro-wavesInfraredGammaraysUVX-raysf(Hz)1010101010101010101046810121416221820(m)420-2-4-6-8-14-10-1210101010101010101010365436405248193157ghiDUVDUVVUVl(nm)CommonUVwavelengthsusedinopticallithography.Figure13.3
SectionoftheElectromagneticImportantWavelengthsforPhotolithographyExposureTable13.1
ImportantWavelengthsforPhotImportanceofMaskOverlayAccuracyPMOSFETNMOSFETCrosssectionofCMOSinverterTopviewofCMOSinverterThemaskinglayersdeterminetheaccuracybywhichsubsequentprocessescanbeperformed.Thephotoresistmaskpatternpreparesindividuallayersforproperplacement,orientation,andsizeofstructurestobeetchedorimplanted.Smallsizesandlowtolerancesdonotprovidemuchroomforerror.Figure13.4
ImportanceofMaskOverlayAccPhotolithographyProcessesNegativeResistWaferimageisoppositeofmaskimageExposedresisthardensandisinsolubleDeveloperremovesunexposedresistPositiveResistMaskimageissameaswaferimageExposedresistsoftensandissolubleDeveloperremovesexposedresist
PhotolithographyProcessesNegaNegativeLithographyUltravioletlightIslandAreasexposedtolightbecomecrosslinkedandresistthedeveloperchemical.Resultingpatternaftertheresistisdeveloped.WindowExposedareaofphotoresistShadowonphotoresistChromeislandonglassmaskSiliconsubstratePhotoresistOxidePhotoresistOxideSiliconsubstrateFigure13.5
NegativeLithographyUltraviolePositiveLithographyFigure13.6
photoresistsiliconsubstrateoxideoxidesiliconsubstratephotoresistUltravioletlightIslandAreasexposedtolightaredissolved.Resultingpatternaftertheresistisdeveloped.ShadowonphotoresistExposedareaofphotoresistChromeislandonglassmaskWindowSiliconsubstratePhotoresistOxidePhotoresistOxideSiliconsubstratePositiveLithographyFigure13.RelationshipBetweenMaskandResistDesiredphotoresiststructuretobeprintedonwaferWindowSubstrateIslandofphotoresistQuartzChromeIslandMaskpatternrequiredwhenusingnegativephotoresist(oppositeofintendedstructure)Maskpatternrequiredwhenusingpositivephotoresist(sameasintendedstructure)Figure13.7
RelationshipBetweenMaskandClearFieldandDarkFieldMasksSimulationofcontactholes(positiveresistlithography)Simulationofmetalinterconnectlines(positiveresistlithography)ClearFieldMaskDarkFieldMaskFigure13.8
ClearFieldandDarkFieldMasEightStepsofPhotolithographyTable13.2
EightStepsofPhotolithographEightStepsofPhotolithography8)Developinspect5)Post-exposurebake6)Develop7)HardbakeUVLightMask4)AlignmentandExposureResist2)Spincoat3)Softbake1)VaporprimeHMDSFigure13.9
EightStepsofPhotolithographPhotolithographyTrackSystemPhotocourtesyofAdvancedMicroDevices,TELTrackMarkVIIIPhoto13.2
PhotolithographyTrackSystemPVaporPrimeTheFirstStepofPhotolithography:PromotesGoodPhotoresist-to-WaferAdhesionPrimesWaferwithHexamethyldisilazane,HMDSFollowedbyDehydrationBakeEnsuresWaferSurfaceisCleanandDry
VaporPrimeTheFirstStepofPSpinCoatProcessSummary:WaferisheldontovacuumchuckDispense~5mlofphotoresistSlowspin~500rpmRampupto~3000to5000rpmQualitymeasures:timespeedthicknessuniformityparticlesanddefectsVacuumchuckSpindleconnectedtospinmotorTovacuumpumpPhotoresistdispenserFigure13.10
SpinCoatProcessSummary:VacuuSoftbakeCharacteristicsofSoftBake:ImprovesPhotoresist-to-WaferAdhesionPromotesResistUniformityonWaferImprovesLinewidthControlDuringEtchDrivesOffMostofSolventinPhotoresistTypicalBakeTemperaturesare90to100°CForAbout30SecondsOnaHotPlateFollowedbyCoolingSteponColdPlate
SoftbakeCharacteristicsofSoAlignmentandExposureProcessSummary:Transfersthemaskimagetotheresist-coatedwaferActivatesphoto-sensitivecomponentsofphotoresistQualitymeasures:linewidthresolutionoverlayaccuracyparticlesanddefectsUVlightsourceMaskResistFigure13.11
AlignmentandExposureProcessPost-ExposureBakeRequiredforDeepUVResistsTypicalTemperatures100to110°ConahotplateImmediatelyafterExposureHasBecomeaVirtualStandardforDUVandStandardResists
Post-ExposureBakeRequiredforPhotoresistDevelopmentProcessSummary:SolubleareasofphotoresistaredissolvedbydeveloperchemicalVisiblepatternsappearonwafer -windows -islandsQualitymeasures: -lineresolution -uniformity -particlesanddefectsVacuumchuckSpindleconnectedtospinmotorTovacuumpumpDevelopdispenserFigure13.12
PhotoresistDevelopmentProcessHardBakeAPost-DevelopmentThermalBakeEvaporateRemainingSolventImproveResist-to-WaferAdhesionHigherTemperature(120to140°C)thanSoftBake
HardBakeAPost-DevelopmentThDevelopInspectInspecttoVerifyaQualityPatternIdentifyQualityProblems(Defects)CharacterizethePerformanceofthePhotolithographyProcessPreventsPassingDefectstoOtherAreasEtchImplantReworkMisprocessedorDefectiveResist-coatedWafersTypicallyanAutomatedOperation
DevelopInspectInspecttoVeriVaporPrimeWaferCleaningDehydrationBakeWaferPrimingPrimingTechniquesPuddleDispenseandSpinSprayDispenseandSpinVaporPrimeandDehydrationBake
VaporPrimeWaferCleaningEffectofPoorResistAdhesionDuetoSurfaceContaminationFigure13.13
ResistliftoffEffectofPoorResistAdhesionHMDSPuddleDispenseandSpinPuddleformationSpinwafertoremoveexcessliquidFigure13.14
HMDSPuddleDispenseandSpinPHMDSHotPlateDehydrationBake
andVaporPrimeWaferExhaustHotplateChambercoverProcessSummary:DehydrationbakeinenclosedchamberwithexhaustHexamethyldisilazane(HMDS)Cleananddrywafersurface(hydrophobic)Temp~200to250CTime~60sec.Figure13.15
HMDSHotPlateDehydrationBakThePurposeofPhotoresistinWaferFabTotransferthemaskpatterntothephotoresistonthetoplayerofthewafersurfaceToprotecttheunderlyingmaterialduringsubsequentprocessinge.g.etchorionimplantation.
ThePurposeofPhotoresistinSuccessiveReductionsinCDsLeadtoProgressiveImprovementsinPhotoresistBetterimagedefinition(resolution).Betteradhesiontosemiconductorwafersurfaces.Betteruniformitycharacteristics.Increasedprocesslatitude(lesssensitivitytoprocessvariations).
SuccessiveReductionsinCDsLPhotoresistTypesofPhotoresistNegativeVersusPositivePhotoresistsPhotoresistPhysicalPropertiesConventionalI-LinePhotoresistsNegativeI-LinePhotoresistsPositiveI-LinePhotoresistsDeepUV(DUV)PhotoresistsPhotoresistDispensingMethodsSpinCoat
PhotoresistSpinCoatTypesofPhotoresistsTwoTypesofPhotoresistPositiveResistNegativeResistCDCapabilityConventionalResistDeepUVResistProcessApplicationsNon-criticalLayersCriticalLayers
TypesofPhotoresistsTwoTypesNegativeVersusPositiveResistsNegativeResistWaferimageisoppositeofmaskimageExposedresisthardensandisinsolubleDeveloperremovesunexposedresistPositiveResistMaskimageissameaswaferimageExposedresistsoftensandissolubleDeveloperremovesexposedresistResolutionIssuesClearFieldVersusDarkFieldMasks
NegativeVersusPositiveResisPhotoresistPhysicalCharacteristicsResolutionContrastSensitivityViscosityAdhesionEtchresistanceSurfacetensionStorageandhandlingContaminantsandparticles
PhotoresistPhysicalCharacterResistContrastPoorResistContrastSlopedwallsSwellingPoorcontrastResistFilmGoodResistContrastSharpwallsNoswellingGoodcontrastResistFilmFigure13.16
ResistContrastPoorResistConSurfaceTension Lowsurfacetension Highsurfacetension fromlowmolecular fromhighmolecular forces forcesFigure13.17
SurfaceTension LowsurfaceteComponentsofConventionalPhotoresistAdditives:chemicalsthatcontrolspecificaspectsofresistmaterialSolvent:givesresistitsflowcharacteristicsSensitizers:photosensitivecomponentoftheresistmaterialResin:mixofpolymersusedasbinder;givesresistmechanicalandchemicalpropertiesFigure13.18
ComponentsofConventionalPhoNegativeResistCross-LinkingAreasexposedtolightbecomecrosslinkedandresistthedeveloperchemical.Unexposedareasremainsolubletodeveloperchemical.Pre-exposure-photoresistPost-exposure-photoresistPost-develop-photoresistUVOxidePhotoresistSubstrateCrosslinksUnexposedExposedSolubleFigure13.19
NegativeResistCross-LinkingAPACasDissolutionInhibitor
inPositiveI-LineResistResistexposedtolightdissolvesinthedeveloperchemical.Unexposedresist,containingPACs,remaincrosslinkedandinsolubletodeveloperchemical.Pre-exposure+photoresistPost-exposure+photoresistPost-develop+photoresistUVOxide
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