電子科學(xué)與技術(shù)專(zhuān)業(yè)英語(yǔ)

1、精選優(yōu)質(zhì)文檔-傾情為你奉上1.1 Energy bands and carrier concentration1.1.1 semiconductor materials New words:Semiconductor n. 半導(dǎo)體; conductivity n. 導(dǎo)電性 ; Resistivity n. 電阻率 ; impurity n. 雜質(zhì); Bipolar transistor 雙極型晶體管 ; rectifier n. 整流器; Photodiode 光電二極管; device n. 裝置；策略；圖案; leakage currents 泄漏電流 magnetic adj. 有吸引力

2、的；有磁性的；Quartz n. 石英; aluminum n. 鋁; illumination n. 照明；光照度; silicon n. 硅；硅元素; gallium n. 化學(xué) 鎵 gallium nitride 氮化鎵；磷化鎵 germanium n.鍺（32號(hào)元素，符號(hào)Ge）;gallium arsenide 砷化鎵 ; arsenide n. 無(wú)化 砷化物; carbon n. 碳；復(fù)寫(xiě)紙adj. 碳的； boron n. 化硼; nitrogen n. 化氮; phosphorus n. 磷; sulfur vt. 用硫磺處理n. 硫磺；硫磺色; silicon dioxide

3、無(wú)化 二氧化硅Comprehension The conductivities of a semiconductor is generally sensitive to temperature, illumination, magnetic field, and minute amount of impurity atoms.半導(dǎo)體的導(dǎo)電性一般對(duì)溫度敏感、照明、磁場(chǎng)與少量的雜質(zhì)原子存在引起的。Germanium proved unsuitable in many application because germanium devices exhibited high leakage curre

4、nts at only moderately elevated temperatures.鍺被證明不適合許多應(yīng)用,因?yàn)殒N器件在只有輕度升高的溫度時(shí)展出很高的泄漏電流。1.1.2 Crystal StructureNew words: Diagonal n. 對(duì)角線；斜線adj. 斜的;Lattice n.格子；格架；晶格vt. 使成格子狀; unit cell 晶體 晶胞，晶體 單胞；晶體 單位晶格; reciprocal n. 數(shù) 倒數(shù)； adj.相互的；倒數(shù)的，彼此相反的cubic-crystal 立方晶體; lattice constant 晶格常數(shù)； 點(diǎn)陣常數(shù);body-centere

5、d cubic 體心立方; Face-centered cubic; diamond lattice 金剛石點(diǎn)陣 鉆石格子 金剛石晶格; tetrahedron n. 晶體 四面體;zinc blende lattice 閃鋅礦晶格; tungsten n. 化學(xué) 鎢;Cartesian coordinates 笛卡兒坐標(biāo) Equidistant adj. 等距的；距離相等的;Sodium n. 化學(xué) 鈉（11號(hào)元素，符號(hào) Na）; Miller indices 密勒指數(shù);ComprehensionThis structure also belongs to the cubic-crystal

6、 family and can be seen as two interpenetrating fcc sublattices with one sublattice displaced from the other by one quarter of the distance along a diagonal of the cube.該結(jié)構(gòu)也屬于立方晶體家庭和可以被看作是兩個(gè)面心立方晶格，其中一個(gè)子晶格沿另一個(gè)的對(duì)角線平移四分之一距離而構(gòu)成的立方。All atoms are identical in a diamond lattice, and each atom in the diamon

7、d lattice is surrounded by four equidistant nearest neighbors that lie at the corners of a tetrahedron.所有的原子都是相同的金剛石晶格,每一個(gè)原子在晶格中都有四個(gè)等距的最近鄰居,處在四面體的四個(gè)角上。Extracurricular ReadingA semiconductor is a material with electrical conductivity due to electron flow (as opposed to ionic conductivity) intermediat

8、e in magnitude between that of a conductor and an insulator. This means conductivity roughly in the range of 103 to 108 Siemens per centimeter. Semiconductor materials are the foundation of modern electronics, including radio, computers, telephones, and many other devices. Such devices include trans

9、istors, solar cells, many kinds of diodes including the light-emitting diode, the silicon controlled rectifier, and digital and analog integrated circuits. Similarly, semiconductor solar photovoltaic panels directly convert light energy into electrical energy.半導(dǎo)體是一種物質(zhì),它由于電子流動(dòng)而產(chǎn)生的電導(dǎo)率(相對(duì)于離子電導(dǎo)率)在導(dǎo)體和絕緣體

10、之間的中間級(jí)。這意味著電導(dǎo)率大致范圍為103到 108西門(mén)子每厘米。半導(dǎo)體材料是現(xiàn)代的電子產(chǎn)品,其中包括收音機(jī),計(jì)算機(jī),電話,和許多其他的設(shè)備的基礎(chǔ)。這樣的設(shè)備包括晶體管、太陽(yáng)能電池、多種二極管包括發(fā)光二極管, 硅可控整流器、數(shù)字和模擬集成電路。同樣,半導(dǎo)體太陽(yáng)能光伏板直接轉(zhuǎn)換光能為電能。1.1.3 Valence BondsNew words:hole n. 洞，孔；洞穴，穴；突破口vt. 鑿洞vi. 鑿洞，穿孔; valence electron 價(jià)電子; covalent bonding 共價(jià)鍵；共價(jià)鍵結(jié)；共價(jià)結(jié)合; positive charge 物 正電荷; deficiency n

11、. 缺陷，缺點(diǎn)；缺乏；; fictitious adj. 虛構(gòu)的；假想的；編造的；假裝的; analogous adj. 類(lèi)似的；昆 同功的；可比擬的Comprehension Each electron spend most of their time between the two nuclei. However, both electrons spend most of their time between the two nuclei.每一個(gè)電子把大部分時(shí)間花在兩個(gè)細(xì)胞核之間。不管怎樣,兩位電子把大部分時(shí)間花在兩個(gè)細(xì)胞核之間的。GaAs has a slight ionic bondi

12、ng force that is an electrostatic attractive force between each Ga- ion and its for neighboring As+ ions, or between each As+ ion and its four neighboring Ga- ions.砷化鎵有輕微的離子鍵合力,是Ga -離子及其附近的As +離子之間的靜電吸引力,或者是每個(gè)Ga +離子及其四個(gè)鄰國(guó)Ga -離子之間的靜電吸引力。This deficiency may be filled by one of the neighboring electron

13、s, which results in a shift of the deficiency location, as from location A to location B.這個(gè)缺陷是由一個(gè)充滿相鄰的電子,有電子位置轉(zhuǎn)移如從地點(diǎn)A移到地點(diǎn)B而產(chǎn)生的缺陷。1.16 Intrinsic Carrier Concentration1.17 Donors and AcceptorsIntrinsic adj. 本質(zhì)的，固有的; impurities n. 雜質(zhì)（impurity的復(fù)數(shù)）; effective density of states 有態(tài)密度; incremental adj. 增加的，

14、增值的;donor 施者; acceptor 受者;extrinsic adj. 外在的；外來(lái)的；非固有的; mass action law 質(zhì)量作用定律；agitation n. 激動(dòng)；攪動(dòng)；煽動(dòng)；煩亂; excitation n. 激發(fā)，刺激；激勵(lì)；激動(dòng);integrating n. 集成化；綜合化v. 整合；積分；集成化（integrate的ing形式）;ComprehensionThis density n(E) is given by the product of density of allowed energy states per unit volume N(E) and by

15、 the probability of occupying that energy range F(E).這樣的密度n(E)是由能量狀態(tài)單位體積內(nèi)所允許的濃度N(E)和占領(lǐng)能量范圍的概率F(E)所得到的。The electron density in the conduction band is given by integrating N(E)F(E)dE from the bottom of the conduction band to the top of the conduction band.導(dǎo)帶的電子密度是通過(guò)整合了N(E)F(E)dE從導(dǎo)帶的底部到導(dǎo)帶的頂部。By contras

16、t most of those are occupied by electrons. Thus, the probability of an electron occupying one of these states in the valence band is nearly unity.與此形成鮮明對(duì)比的是他們大多數(shù)都是由電子所占用。因此,一個(gè)電子占領(lǐng)這些位置的其中一個(gè)的概率在價(jià)帶中幾乎是一致的。For shallow donors in silicon and gallium arsenide, there usually is enough thermal energy go supp

17、ly the energy ED to ionize all donor impurities at room temperature and thus provide an equal number of electrons in the conduction band.對(duì)于在硅和砷化鎵中的淺的施者,通常是足夠的熱能去提供了能量ED使施主雜質(zhì)在室溫下電離, 從而在導(dǎo)帶中提供相等數(shù)量的電子。1.2 Carrier Transport Phenomena1.2.1 Carrier DriftNew words:Equipartition n. 物化學(xué) 均分; impact ionization

18、物 碰撞電離;mean free path 物 平均自由程; collision n.（意見(jiàn)，看法）的抵觸，沖突;Saturation n. 飽和；色飽和度；浸透；磁化飽和; drift velocity 電子 漂移速度Succession n. 連續(xù)；繼位；輪栽 演替; sufficiently adv. 充分地；足夠地;Injection n. 注射；注射劑；充血；射入軌道;Superimposed adj. 地物 疊加的；上疊的；重疊的; Net n. 網(wǎng)；網(wǎng)絡(luò)；凈利；實(shí)價(jià)adj. 純粹的；凈余的vt. 得到；凈賺；用網(wǎng)捕vi. 編網(wǎng); scattering n. 散射；分散v. 散射；

19、散布；驅(qū)散（scatter的ing形式）adj. 分散的;mobility n. 移動(dòng)性；機(jī)動(dòng)性；電子 遷移率; ComprehensionThe thermal motion of an individual electron may be visualized as a succession of random scattering from collisions with lattice atoms, impurity atoms, and other scattering centers. 一個(gè)單獨(dú)電子的熱運(yùn)動(dòng)的可以想象成與晶格原子,雜質(zhì)原子,和其他散射中心碰撞而產(chǎn)生隨機(jī)散射。1.2.

20、2 Carrier Diffusion1.2.3 Carrier InjectionNew words:carrier injection 載體注入; spatial adj. 空間的；受空間條件限制的;excitation n. 激發(fā)，刺激；激勵(lì)；激動(dòng); overwhelm vt. 壓倒；淹沒(méi)；受打擊derivative n. 化學(xué) 衍生物，派生物adj. 派生的；引出的; gradient n. 數(shù)物 梯度；坡度；傾斜度adj. 傾斜的；步行的;bias n. 偏見(jiàn)；偏愛(ài)；斜紋；乖離率adj. 偏斜的vt. 使存偏見(jiàn)adv. 偏斜地; magnitude n. 大?。涣考?jí)；地震 震級(jí)；重要

21、；光度; ComprehensionThe diffusion current is proportional to the spatial derivative of the electron density. Diffusion current results from the random thermal motion of carriers in a concentration gradient.擴(kuò)散電流與電子密度空間導(dǎo)數(shù)成正比的。擴(kuò)散電流產(chǎn)生于隨機(jī)熱運(yùn)動(dòng)中載流子的濃度梯度。If the photon energy hr of the light is greater than the

22、 bandgap energy Eg of the semiconductor, where h is the Planck constant and v is the optical frequency, the photon is absorbed by semiconductor and an electron-hole pair is generated.如果光的光子能量hr比半導(dǎo)體的帶隙能量大,其中h是普朗克常數(shù)和v是光學(xué)頻率，光子被半導(dǎo)體吸收同時(shí)一個(gè)空穴對(duì)產(chǎn)生的。Extracurricular ReadingThe width of the bandgap in a semicon

23、ductor is small enough to allow for electrons to "jump" from the valence band into the conduction band and reciprocally. In addition, electrons can also "jump" from the conduction or valence band into permitted energy levels located inside the bandgap. These levels arise from the

24、 presence of trace impurity elements or crystalline defects. If, for instance, an electron jumps from the valence band into the conduction band, it becomes free to move in the crystal. At the same time, a free hole is created in the valence band, which is free to move as well. Such an event is calle

25、d "carrier pair generation" or, more simply, "generation". An electron can also "fall" from the conduction band into the valence band. In this process called "recombination“ both a free electron and a free hole are lost. More complex generation/recombination proces

26、ses can occur as well, in which permitted energy states within the bandgap are involved. 帶隙的寬度在半導(dǎo)體足夠小,以便電子從價(jià)帶“跳”進(jìn)導(dǎo)帶和參考。此外,電子也可以從傳導(dǎo)或價(jià)帶“跳”進(jìn)坐落在帶隙的允許能級(jí)。這些層面引起的微量雜質(zhì)元素的存在或晶體的缺陷。例如,如果一個(gè)電子從價(jià)帶跳進(jìn)導(dǎo)帶,它在晶體中就會(huì)變得自由移動(dòng)。與此同時(shí),一個(gè)自由的空穴在價(jià)帶中創(chuàng)造,這是自由移動(dòng)。這樣的一個(gè)活動(dòng)被稱為“載體對(duì)一代”,或者更簡(jiǎn)單地說(shuō),“世代”。一個(gè)電子可以從導(dǎo)帶“下落”到價(jià)帶。在這個(gè)過(guò)程叫做“復(fù)合”一個(gè)自由的電子和一次自由的

27、空穴消失了。在允許能量狀態(tài)的帶隙內(nèi)參與的情況下,同樣會(huì)更復(fù)雜的生成/重組過(guò)程發(fā)生。1.3 PN JunctionNew words:carrier injection 載體注入; quantitative adj. 定量的；量的，數(shù)量的;amplification n. 電子 放大（率）；擴(kuò)大；詳述; steady state 物 定態(tài)；恒穩(wěn)態(tài);transient state 瞬態(tài)；過(guò)渡狀態(tài); qualitative adj.定性的；質(zhì)的，性質(zhì)上的; bias n. 偏見(jiàn)；偏愛(ài)；斜紋；乖離率adj. 偏斜的vt. 使存偏見(jiàn)adv. 偏斜地; magnitude n. 大??；量級(jí)；地震 震級(jí)；重

28、要；光度; overwhelm vt. 壓倒；淹沒(méi)；受打擊; potential barrier 物 勢(shì)壘；電子 位壘; voltmeter n. 電 伏特計(jì)，電壓計(jì)ComprehensionThe contact potential appearing across W is a built-in potential, in that it is necessary to the maintenance of equilibrium at the junction; it does not imply any external potential.接觸潛在的出現(xiàn)在W是一個(gè)內(nèi)置的潛力,在于它對(duì)

29、維持平衡的交匯處是必要的,它不含有任何外部的潛力。However, we could predict the lack of spatial variation of the Fermi level from thermodynamic arguments. Any gradient in the quasi-Fermi level implies a net current.然而,我們可以從熱力學(xué)參數(shù)費(fèi)米能級(jí)預(yù)測(cè)空間變異性的缺乏。準(zhǔn)費(fèi)米能級(jí)的任何梯度蘊(yùn)含著凈電流。Chapter 2 Semiconductor Device2.1 Bipolar Junction Transistor2.2

30、The MOSFET2.3 Microwave and Photonic Devices2.4 Summary2.1 Bipolar Junction TransistorNew words: endeavor n. vi. vt. 努力；盡力（等于endeavour）努力；conceive vi. 懷孕；設(shè)想；考慮vt. 懷孕；構(gòu)思；以為；持有; postulating vt. 假定；要求；視為理所當(dāng)然n. 基本條件；假定;unfolding n. 演變；生化 伸展；生物物理 解折疊v. 展開(kāi)（unfold的ing形式）; Prime n. 初期； adj. 主要的；最好的；基本的vt. 使

31、準(zhǔn)備好；填裝adv. 極好地vi. 作準(zhǔn)備; Primitive n. 原始人adj. 原始的，簡(jiǎn)單的，粗糙的; artistic adj. 藝術(shù)的；風(fēng)雅的；有美感的;supervisor n. 監(jiān)督人，管理人；檢查員; instinct n. 本能，直覺(jué)；天性adj. 充滿著的;analog n.模擬；類(lèi)似物adj.模擬的；有長(zhǎng)短針的; analytical adj. 分析的；解析的；善于分析的;genuine adj. 真實(shí)的，真正的；誠(chéng)懇的; adjective n. 形容詞adj. 形容詞的；從屬的; inferior n. 下級(jí)；次品adj. 差的；自卑的；下級(jí)的，下等的; acro

32、nym n. 首字母縮略詞;insofar as在的范圍內(nèi)；到程度; embodiment n. 體現(xiàn)；化身；具體化; proliferate. 增殖；擴(kuò)散；激增vt. 使激增;constantly adv. 不斷地；時(shí)常地; complementary adj. 補(bǔ)足的，補(bǔ)充的; dissipation n. 浪費(fèi)；消散；物 損耗; vehicle n. 車(chē)輛 車(chē)輛；工具；交通工具；傳播媒介ComprehensionHe was endeavoring, with sound engineering instinct, to conceive of a one-dimensional ana

33、log of the point-contact device as a way of opening the door to analytical investigation of its operation.他正在努力，以音響師的本能，以一個(gè)點(diǎn)接觸器的一維模擬設(shè)想作為一個(gè)開(kāi)放的大門(mén)去分析調(diào)查它的運(yùn)算。Reduced to practice in 1951, it had for all practical purposes shouldered the point-contact device aside by the mid-1950s.在1951年減少實(shí)踐中，它實(shí)際上肩負(fù)著20世紀(jì)50

34、年代中期的點(diǎn)接觸的設(shè)備預(yù)留The unfolding story of solid-state electronics can be told rather completely in terms of evolving fabrication technology, constantly expanding the number of options available to the device and integrated circuit designer.固態(tài)電子學(xué)的展開(kāi)的故事可以講述,而完全地依據(jù)進(jìn)化的制造工藝,不斷擴(kuò)大設(shè)備和集成電路設(shè)計(jì)的大量可供選擇。In integrated c

35、ircuit today, the combination of silicon NPN and PNP devices is a growing practice because the resulting complementary circuits have important power-dissipation and performance advantages.在集成電路的今天,硅的NPN和PNP器件結(jié)合是發(fā)展的應(yīng)用,因?yàn)楫a(chǎn)生的互補(bǔ)電路,具有重要的能量消耗和性能優(yōu)點(diǎn)。2.1.1 Structure and TechnologyNew words:Parallelepiped n.

36、平行六面體; metallurgical adj. 冶金的；冶金學(xué)的; Pedestal n. 基架，基座；基礎(chǔ)vt. 擱在臺(tái)上；支持 analogous adj. 類(lèi)似的；可比擬的; Ambiguity n. 含糊；不明確；曖昧；模棱兩可的話; retain vt. 保持；雇；記住; Resemblance n. 相似；相似之處；相似物；肖像; prototypical adj. 原型的；典型的; Parasitic adj. 寄生的（等于parasitical）; Vestigial adj. 退化的；殘余的；發(fā)育不全的;parallel n. 平行線；對(duì)比adj. 平行的；類(lèi)似的，相同的

37、vt. 使與平行; Grooves n. 細(xì)槽，凹槽（groove的復(fù)數(shù)）; simultaneously 同時(shí)發(fā)生地 remnant n. 剩余adj. 剩余的; Mount n. 山峰；底座；乘騎用馬vt. 增加；爬上vi. 爬；上升; ComprehensionNonetheless, in a large number of devices having the newer structure, the currents through the junctions retain an essentially one-dimensional character, with importa

38、nt current fractions and current components being normal to the junction.然而,在大量的設(shè)備有更新的結(jié)構(gòu)、電流通過(guò)結(jié)點(diǎn)保持一個(gè)本質(zhì)上一維的特性,具有重要的電流分量和電流主份垂直于結(jié)點(diǎn)。Any electrical resistance to the passage of current through this thick region is a parasitic feature of the device that one would prefer to avoid.對(duì)于電流通過(guò)這根粗區(qū)域的通道的任何電阻是這個(gè)器件更愿

39、意避免的一個(gè)寄生的特性。2.1.2 Biases and Terminal CurrentsNew words:acknowledge; disturbance; inevitable; inherent; subsume; qualitative; realism; geometric; magnitude; worthwhile; adhere;ComprehensionThis useful combination of properties has made the common-emitter configuration the most widely used of the several possibilities, a term acknowledging that the emitter terminal is commo