半導(dǎo)體制造技術(shù)導(dǎo)論（第二版）蕭宏 第6章 光刻工藝

2023-07-041第6章光刻工藝本章主要內(nèi)容6.1光刻膠6.2光刻工藝6.3光刻技術(shù)的發(fā)展趨勢6.4本章小結(jié)集成電路工藝流程材料設(shè)計光刻板IC工廠測試封裝終測熱處理光刻刻蝕去

光刻膠離子注入去光刻膠金屬化化學(xué)機械研磨介質(zhì)沉積晶圓26.1

光刻膠3本節(jié)主要內(nèi)容光刻膠及其成份正膠和負(fù)膠化學(xué)增強式光刻膠光刻膠及其成份—光刻膠4Photoresist(光刻膠)Photo

sensitive

material(感光材料)Temporarily

coated(臨時覆蓋)on

wafer

surface

Transfer

design

image(轉(zhuǎn)移設(shè)計圖形)on

it

throughexposure(曝光)

sensitive

to

UV(Ultraviolet,紫外)light,insensito

yellow

light.光刻膠及其成份—光譜5Visible

spectru(m可見光譜)一般，人眼可以感知波長在400～760

nm之間的電磁波光刻膠及其成份—光刻膠的要求6Requirement

of

Photoresist(光刻膠的要求High

resolution(分辨率)Thinner

PR

film

has

higher

resolution

Thinner

PR

film,the

lower

the

etching

and

ionimplantation

resistance(抗蝕和離子注入性)High

etch

resistance(抗蝕性)Good

adhesion(黏附性)Wider

process

latitude(工藝寬容度)Higher

tolerance(容許)to

process

condition

chan光刻膠及其成份—光刻膠參數(shù)7Photoresist

Performance

Factor(性能參數(shù)Resolution(分辨率)Adhesion(黏附性)

Expose

rate(曝光率),Sensitivity(靈敏度)andExposure

Source(曝光光源)Process

latitude(工藝寬容度)Pinholes(氣孔)Particle

and

Contamination

Levels(粒子和污染物等級Step

Coverage(覆蓋性)Thermal

Flow(熱流動性)光刻膠及其成份—成份8Photoresist

Composition(光刻膠的成份)Polymer(聚合物)Sensitizers(感光劑)Solvents(溶劑)Additives(添加劑)Polymer(聚合物)Solid

organic(有機)materialTransfers

designed

pattern(圖案)to

wafer

surface

Changes

solubility(溶解度)due

to

photochemicalreaction(光化學(xué)反應(yīng))when

exposed

to

UV

light.Positive

polymer(正膠聚合物):酚甲醛或酚醛樹脂Negative

polymer(負(fù)膠聚合物):聚異戊二烯橡膠9光刻膠及其成份—聚合物Sensitizers(感光劑)

Controls

and/or

modifies(調(diào)整)photochemicalreaction(光化學(xué)反應(yīng))of

PR

during

exposure.Positive

sensitizer(正膠感光劑)10—damage

cross

linked(交聯(lián))structure

during

exposu—

from

insoluble

to

solubleNegative

sensitizer(負(fù)膠感光劑)form

cross

linked(交聯(lián))structure

during

exposurefrom

soluble

to

insoluble光刻膠及其成份—感光劑Solvent(溶劑)

Dissolves(溶解)polymers

and

sensitizers

intoliquid(溶液)

Allow

application(應(yīng)用)of

thin

PR

layers

byspinning(旋涂),0.5

~

3

mm.Positive

PR(正膠):醋酸鹽Negative

PR(負(fù)膠):二甲苯11光刻膠及其成份—溶劑Additives(添加劑)

Various

added

chemical(化學(xué)物)to

achievedesired

process

results,such

as

dyes(染料)

to

reduce

reflection(反射).12光刻膠及其成份—添加劑正膠和負(fù)膠13Negative

Photoresist(負(fù)膠)Becomes

insoluble(不可溶)after

exposure(曝光)

When

developed(顯影),the

unexposed(未曝光)partdissolved(溶解).CheaperPositive

Photoresist(正膠)Becomes

soluble

after

exposureWhen

developed,

the

exposed

parts

dissolvedBetter

resolution(分辨率)正膠和負(fù)膠14(顯影)(紫外光)(曝光)(光刻膠)正膠和負(fù)膠—負(fù)膠的缺點15Disadvantages

of

Negative

Photoresist

Polymer(聚合物)absorbs(吸收)the

developmentsolvent(顯影劑)——xylene(二甲苯)Poor

resolution(分辨率)due

to

PR

swelling(膨脹)

Environmental

and

safety

issues(問題)due

to

themain

solvents

xylene(二甲苯).Comparison

of

Photoresists(光刻膠)正膠和負(fù)膠—負(fù)膠的缺點16正膠和負(fù)膠—疑問17QuestionQ:Positive

photoresist(正膠)can

achieve(獲得)much higher

resolution(分辨率)than

negative

photoresi why

didn’t

people

use

it

before

the

1980s???A:Positive

photoresist(正膠)is

much

more

expensive therefore

negative

photoresist(負(fù)膠)was

used

unti it

had

to

be

replaced

when

the

minimum

feature

size (特征尺寸)was

shrunk(縮小)to

smaller

than

3

mm.化學(xué)增強式光刻膠18ChemicallyAmplifiedPhotoresistsDeep

ultraviolet

(DUV),

248

nm

or

193

nmLight

source:excimer

lasers(準(zhǔn)分子激光)

Light

intensity(光強)is

lower

than

G-line(436

nm)aI-line(365

nm)from

high-pressure

mercury

lamp(汞燈Need

different

kind

of

photoresist化學(xué)增強式光刻膠ChemicallyAmplifiedPhotoresists

Catalysis

effect(

化作用)is

used

to

increase

theeffective

sensitivity(有效靈敏度)of

the

photoresi

A

photo-acid(光酸)is

created

in

PR

when

it

exposes

tDUV

light(深紫外光)

During

PEB(Post

Exposure

Bake,曝光后烘烤),photo-acid

diffusion

causes

amplification

in

a

catalytic

rAcid

removes

protection

groups(保護(hù)基)Exposed

part

will

be

removed

by

developer(顯影液)19化學(xué)增強式光刻膠ChemicallyAmplifiedPhotoresist(保護(hù)基團)20(保護(hù)基團)2023-07-0421第6章光刻工藝本章主要內(nèi)容6.1光刻膠6.2光刻工藝6.3光刻技術(shù)的發(fā)展趨勢6.4本章小結(jié)6.2

光刻工藝22本節(jié)主要內(nèi)容晶圓清洗和預(yù)處理光刻膠涂敷和軟烘對準(zhǔn)與曝光曝光后烘烤、顯影和硬烘圖形檢測晶圓軌道-步進(jìn)機配套系統(tǒng)6.2

光刻工藝Alignment

and

exposurePost

exposure

bakeDevelopmentHard

bakePattern

inspectionDevelopmentBasic

Steps(基本步驟)Wafer

cleanPre-bake

and

primer

coating

PR

coatingPhotoresist

spin

coatingTrack-stepper?

Soft

bakeintegratedsystem23246.2

光刻工藝(黃光區(qū))(剝離光刻膠)(刻蝕)(離子注入)(檢查)(合格)(不合格)(表面處理)(涂敷光刻膠)(軟烘)(對準(zhǔn)&曝光)(曝光后烘烤)(硬烘)(顯影)6.2

光刻工藝Wafer

CleanPre-bake

and

Primer

VaporPhotoresist

CoatingSoft

Bake256.2

光刻工藝Post

Exposure

BakeAlignment

and

Exposure

Alignment

and

ExposureDevelopment,

Hard

Bake,Pattern

Inspection26晶圓清洗和預(yù)處理—清洗27Wafer

Clean(晶圓清洗)Remove

contaminants(污染物)Remove

particulate(微粒)Reduce

pinholes(針孔)and

other

defectsImprove

photoresist

adhesion(黏附性)晶圓清洗和預(yù)處理—清洗28Older

ways(以前的方法)High-pressure

nitrogen(氮氣)blow-off(吹除)Rotating

brush

scrubber(旋轉(zhuǎn)刷洗機)High-pressure

water

stream(水蒸氣)Standard

way(標(biāo)準(zhǔn)方法),its

basic

stepsChemical

clean(化學(xué)清洗)Rinse(沖洗)by

using

DI

water(去離子水)Dry(甩干)Wafer

Clean

Process(晶圓清洗工藝)晶圓清洗和預(yù)處理—清洗29Chemical

CleanRinseDry化學(xué)清洗沖洗甩干晶圓清洗和預(yù)處理—預(yù)處理30Prebake(前烘)Dehydration(脫水)bakeRemove

moisture(水分)from

wafer

surfacePromote(改進(jìn))adhesion

between

PR

and

surfaceUsually

around

150

~

200

℃,

1

~

2

minPrimer

Coating(底漆涂敷)Promotes

adhesion(黏附性)of

PR

to

wafer

surfaceWildly

used:六甲基二戊烷(HMDS)

HMDS

vapor(蒸汽)coating

prior

to(先于)PR

spincoating(旋轉(zhuǎn)涂敷)Usually

performed

in-situ(臨場反應(yīng))with

pre-bakChill

plate(冷卻板)to

cool

down

wafer

before

PRcoating(光刻膠涂敷)31晶圓清洗和預(yù)處理—預(yù)處理32(脫水烘烤)(底漆蒸汽涂敷)Pre-bake

and

Primer

Vapor

Coating(前烘和底漆蒸汽涂敷)(預(yù)處理反應(yīng)室)

(底漆層)晶圓清洗和預(yù)處理—預(yù)處理Wafer

Cooling(水冷)Wafer

need

to

cool

downWater-cooled

chill

plate(水冷式冷卻平臺)Temperature

can

affect

PR

viscosity(黏滯性)—

Affect

PR

spin

coating

thickness33晶圓清洗和預(yù)處理—預(yù)處理光刻膠涂敷和軟烘—自旋涂敷34Spin

Coating(自旋涂敷)Wafer

sit

on

a

vacuum

chuck(真空吸盤)Rotate(旋轉(zhuǎn))at

high

speedLiquid(液體)photoresist

applied

at

center

of

wafePhotoresist

spread(鋪開)by

centrifugal

force(離心Evenly(均勻地)coat

on

wafer

surface光刻膠涂敷和軟烘—自旋涂敷35Viscosity(粘滯性)Fluids(液體)stick

on

the

solid

surfaceAffect

PR

thickness

in

spin

coating(旋轉(zhuǎn)涂敷)Related

to

PR

type

and

temperatureNeed

high

spin

rate(轉(zhuǎn)速)for

uniform(均勻)coatin光刻膠涂敷和軟烘—自旋涂敷Relationship

of

Photoresist

ThicknesstoSpin

Rate(轉(zhuǎn)速)and

Viscosity(粘滯性)cst:centistokes,厘3637光刻膠涂敷和軟烘—自旋涂敷Photoresist

Spin

Coater(光刻膠旋涂機)EdgeBeadRemoval(水套管)(卡盤)(排氣)(排水)(真空)38光刻膠涂敷和軟烘—自旋涂敷TimeDynamic

Spin

Rate(動態(tài)轉(zhuǎn)速)7000

r/minmic

Spin

Rate500

r/min光刻膠涂敷和軟烘—自旋涂敷(卡盤)(軸)39Photoresist

Applying(涂光刻膠)(光刻膠配料機噴嘴)光刻膠涂敷和軟烘—自旋涂敷Photoresist

Suck

Back(光刻膠吸回)40光刻膠涂敷和軟烘—自旋涂敷Photoresist

Spin

Coating(光刻膠自旋涂敷41光刻膠涂敷和軟烘—自旋涂敷Photoresist

Spin

Coating(光刻膠自旋涂敷42光刻膠涂敷和軟烘—自旋涂敷Photoresist

Spin

Coating(光刻膠自旋涂敷43光刻膠涂敷和軟烘—自旋涂敷44Edge

Bead

Removal(EBR,邊緣球狀物移除)PR

spread(散布)to

the

edges(邊緣)and

backside

PR

could

flakes

off(脫落)during

mechanicalhandling(機械處理)and

causes

particles(微粒)Front

and

back

chemical(化學(xué))EBRFront

optical(光學(xué))EBR光刻膠涂敷和軟烘—自旋涂敷Edge

Bead

Removal(EBR,邊緣球狀物移除)45(溶劑)光刻膠涂敷和軟烘—自旋涂敷Edge

Bead

Removal(EBR,邊緣球狀物移除)46(溶劑)光刻膠涂敷和軟烘—自旋涂敷Ready

For

Soft

Bake(準(zhǔn)備軟烘)47光刻膠涂敷和軟烘—自旋涂敷48Optical

Edge

Bead

Removal(光學(xué)式EBR)

After

alignment

and

exposure(對準(zhǔn)和曝光),

before

development(顯影)Wafer

edge

expose

(WEE)

Exposed

photoresist

at

edge

dissolves(溶解)

during

development(顯影)光刻膠涂敷和軟烘—自旋涂敷Optical

Edge

Bead

Removal(光學(xué)式EBR)49光刻膠涂敷和軟烘—自旋涂敷50Developer

Spin

Off(顯影劑甩離)光刻膠涂敷和軟烘—軟烘51Soft

Bake(軟烘)Evaporating(蒸發(fā))most

of

solvents(溶劑)in

PRincrease

the

adhesion(增加黏附性)After

soft

bake,thickness(厚度)is

reduce

by

10~20Over

bake:less

photo-sensitivity(光靈敏度)Under

bake:

affect

adhesion

and

exposure光刻膠涂敷和軟烘—軟烘52Soft

BakeHot

plates(加熱平板)Convection

oven(對流烤箱)Infrared

oven(紅外線烤箱)Microwave

oven(微波烤箱)光刻膠涂敷和軟烘—軟烘Baking

Systems(烘烤系統(tǒng))53光刻膠涂敷和軟烘—軟烘Hot

PlatesWidely

used

in

the

industryBack

side

heating,no

surface“crust(硬皮)”In-line(嵌入)track

system(軌道系統(tǒng))54光刻膠涂敷和軟烘—軟烘55Wafer

CoolingNeed

to

cool

down

to

ambient

temperature(室溫)Water-cooled

chill

plateFor

12

inch

(300

mm)

wafer,

1

℃change

causes0.75

mm

difference

in

diameter(直徑)對準(zhǔn)與曝光56Alignment

and

ExposureMost

critical(關(guān)鍵的)process

for

IC

fabricationMost

expensive

tool

(stepper)

in

an

IC

fab.Most

challenging(具有挑戰(zhàn)的)technology

Determines(決定)the

minimum

feature

size(特征尺寸)Currently

14

nm

and

pushing

to

7

nm對準(zhǔn)與曝光57Alignment

and

Exposure

Tools(工具)Contact

printer(接觸式曝光機)Proximity

printer(接近式曝光機)Projection

printer(投影式曝光機)Stepper(步進(jìn)機)對準(zhǔn)與曝光—接觸式曝光機58Contact

PrinterSimple

equipmentUse

before

mid-70sResolution(分辨率):capable

for

sub-microDirect

mask-wafer

contact,Particles(微粒Limited

mask

lifetime(有限的光刻板壽命)Contact

Printing59對準(zhǔn)與曝光—接觸式曝光機Proximity

Printer~

10

mm

from

wafer

surfaceNo

direct

contactLonger

mask

lifetimeResolution:

>

2

mm60對準(zhǔn)與曝光—接近式曝光機Proximity

Printing61對準(zhǔn)與曝光—接近式曝光機Projection

PrinterWorks

like

an

overhead

projector(投影機)Mask

to

wafer,

1:1Resolution

to

about

1

mm62對準(zhǔn)與曝光—投影式曝光機Projection

System(投影系統(tǒng))63對準(zhǔn)與曝光—投影式曝光機(透鏡)Scanning

Projection

System(掃描投影系統(tǒng))(狹縫)64對準(zhǔn)與曝光—投影式曝光機(透鏡)(透鏡)(光刻板和晶圓同步移動)Stepper

Most

popular

used

photolithography(光刻)tool

in

tadvanced(先進(jìn)的)IC

fabs(工廠)

Reduction

of

image(縮小圖像)gives

high

resolution(高分辨率)0.25

mm

and

beyondVery

expensive65對準(zhǔn)與曝光—步進(jìn)式曝光機Step-&-Repeat

Alignment/Exposure66(投影透鏡)(倍縮光刻板)對準(zhǔn)與曝光—步進(jìn)式曝光機Step&Repeat

Alignment

System67對準(zhǔn)與曝光—步進(jìn)式曝光機Q

&

AQ:Why

does

the

4:1

shrink

ratio(縮小比例)is more

popular

than

the

10:1

shrink

ratio?A:10:1

image

shrink

has

better

resolution(分辨率)

than

4:1

image

shrink.However,it

only

exposes(曝光)16%of

the

area,which

means

total

exposuretime(曝光)will

be

largely

increased.68對準(zhǔn)與曝光—接近式曝光機Exposure

Light

Source(曝光光源)Short

wavelength(短波長)High

intensity(高亮度)Stable(穩(wěn)定)High-pressure

mercury

lamp(高壓汞燈)Excimer

laser(準(zhǔn)分子激光)69對準(zhǔn)與曝光—曝光光源Spectrum(光譜)of

the

Mercury

Lamp70對準(zhǔn)與曝光—曝光光源Photolithography

Light

Sources(光刻光源對準(zhǔn)與曝光—曝光光源71Exposure

Control

Exposure

controlled

by

production

of

lightintensity(光強度)and

exposure

time(曝光時間)Intensity

controlled

by

electrical

power(電功率)Adjustable

light

intensityRoutine

light

intensity

calibration(經(jīng)常光強校72對準(zhǔn)與曝光—曝光控制曝光后烘烤、顯影和硬烘—后烘73Standing

Wave

Intensity(駐波強度)Standing

Wave

Effect(駐波效應(yīng))on

PR曝光后烘烤、顯影和硬烘—后烘74Post

Exposure

Bake(PEB)MinimizesStanding

Wave

Effect(駐波效應(yīng))曝光后烘烤、顯影和硬烘—后烘75Post

Exposure

BakePhotoresist

glass

transition

temperature(轉(zhuǎn)化溫度

Baking

temperature(烘烤溫度)higher

than

Tg,thermal

movement

of

photoresist

molecules(分子),

rearrangement(重新分布)of

the

overexposed

andunderexposed

PR

molecules

Smooth

PR

sidewall(側(cè)墻)and

improve

resolution(分辨率)76曝光后烘烤、顯影和硬烘—后烘Post

Exposure

Bake

PEB

normally

uses

hot

plate(熱平臺)at

110

to130℃for

about

1

minute.

For

the

same

kind

of

PR,PEB

usually

requires

ahigher

temperature

than

soft

bake(軟烘).

Insufficient(不充分的)PEB

will

not

completelyeliminate(消除)the

standing

wave

pattern

Over-baking(過度烘烤)will

cause

polymerization(聚合)and

affects

photoresist

development(顯影)77曝光后烘烤、顯影和硬烘—后烘曝光后烘烤、顯影和硬烘—顯影78Development(顯影)

Developer

solvent(顯影溶劑)dissolves(溶解)thesoftened

part(軟化部分)of

photoresistTransfer

the

pattern(轉(zhuǎn)移圖形)from

mask

or

reticto

photoresistThree

basic

steps:DevelopmentRinse(沖洗)Dry曝光后烘烤、顯影和硬烘—顯影79Schematic

of

a

Spin

Developer(自旋顯影)曝光后烘烤、顯影和硬烘—顯影80Applying

Development

Solution曝光后烘烤、顯影和硬烘—顯影81Development

Solution

Spin

Off(甩掉)曝光后烘烤、顯影和硬烘—顯影82DI

Water

Rinse(去離子水沖洗)83曝光后烘烤、顯影和硬烘—顯影Spin

Dry(甩干)曝光后烘烤、顯影和硬烘—顯影84Ready

For

Next

Step曝光后烘烤、顯影和硬烘—顯影85Developer

Solution(顯影液)曝光后烘烤、顯影和硬烘—顯影(顯影液)86(氫氧化四甲基氨)(二甲苯)(甩干)(去離子水)(乙酸丁酯)87Development

Profiles(顯影圖像)(正常顯影)(不完全顯影)(過度顯影)(顯影不足)曝光后烘烤、顯影和硬烘—顯影Hard

Bake(硬烘)Evaporating(蒸發(fā))all

solvents(溶劑)in

PRImproving

etch

and

implantation

resistance(抵抗能Improve

PR

adhesion(粘附性)with

surfacePR

flow(流動)to

fill

pinhole(填針孔)Hot

plate(熱平板),100

~

130℃,1

~

2

min88曝光后烘烤、顯影和硬烘—硬烘PR

Pinhole

Fill

by

Thermal

Flow曝光后烘烤、顯影和硬烘—硬烘89Photoresist

Flow(光刻膠流動)曝光后烘烤、顯影和硬烘—硬烘90圖形檢測91Pattern

Inspection(圖形檢測)Fail(不合格)inspection,stripped

PR

and

reworkPhotoresist

pattern

is

temporary(臨時的)Etch

or

ion

implantation

pattern

is

permanent(永久Scanning

electron

microscope(SEM)(掃描電子顯微鏡)Optical

microscope(光學(xué)顯微鏡)散射檢測儀CD-SEM,Critical

Dimension(關(guān)鍵尺寸)圖形檢測92Electron

Microscope(電子顯微鏡)在側(cè)墻和平板表面會有更少的二次電子在棱角處有更多的二次電子圖形檢測93Q

&

AQ:Can

optical

microscope(光學(xué)顯微鏡)be

used for

the

0.25

mm

feature

inspection(特征檢查)?A:No.Because

the

feature

size(0.25

mm=250

nm)is smaller

than

the

wavelength(波長)of

the

visible

lig (可見光),which

is

from

390

nm(violet,紫光)to750

nm(red,紅光).94圖形檢測Pattern

InspectionAlignment(對準(zhǔn))run-out,

run-inreticle

rotation(倍縮光刻板旋轉(zhuǎn)),wafer

rotatimisplacement(偏移)in

X-direction

and

Y-directionCritical

dimension

(CD)Surface

irregularities(不規(guī)整)scratches(劃痕),pinholes(針孔),—stains(污點),contamination(污染物),etc.圖形檢測Misalignment

Cases(對準(zhǔn)誤差情形)95圖形檢測Critical

Dimension(傾斜邊緣)96(關(guān)鍵尺寸損失)晶圓軌道-步進(jìn)機配套系統(tǒng)97(預(yù)處理反應(yīng)室)(自旋涂機)(冷卻平臺)(步進(jìn)機)(加熱平臺)(顯影)堆疊式晶圓軌道機示意圖(顯影)98(自旋涂機)(加熱平臺)(冷卻平臺)(預(yù)處理反應(yīng)室)2023-07-0499第6章光刻工藝本章主要內(nèi)容6.1光刻膠6.2光刻工藝6.3光刻技術(shù)的發(fā)展趨勢6.4本章小結(jié)6.3

光刻技術(shù)的發(fā)展趨勢100本節(jié)主要內(nèi)容分辨率與景深曝光光源分辨率增強技術(shù)浸入式光刻技術(shù)雙重、三重和多重圖形化技術(shù)分辨率與景深—衍射Light

Diffraction(衍射)Without

Lens(透(衍射光)101(投影光強)Diffraction

Reduction(降低衍射)Short

wavelength(波長)waves

have

less

diffractionOptical

lens(光學(xué)透鏡)can

collect(收集)diffractlight

and

enhance(增強)the

image(成像)102分辨率與景深—衍射103分辨率與景深—衍射(透鏡收集的衍射光)Light

Diffraction(衍射)With

Lens(透鏡(雜散折射光)(透鏡聚焦后得到更少的衍射光)(理想的光強圖形)Resolution(分辨率)R

(resolution):the

achievable(可獲得的),repeatable(重

minimum

feature

size(最小特征尺寸)K1:the

system

constant(系統(tǒng)常數(shù))l

:the

wavelength

of

the

light(光的波長)NA

:the

Numerical

Aperture(數(shù)值孔徑),capability

of

lens collect

diffraction

light(收集衍射光)分辨率與景深—分辨率104分辨率與景深—分辨率Numerical

Aperture(數(shù)值孔徑)NA

=

2r0/Dr0:radius

of

the

lens(透鏡的半徑)D:the

distance

of

the

object(目標(biāo)物)from

the

len105Exercise

1,

K1

=

0.50.360.300.210.16106分辨率與景深—分辨率To

Improve

Resolution(改進(jìn)分辨率)Increase

NA

Larger

lens(更大的透鏡),could

be

too

expensivand

unpractical(不現(xiàn)實)

Reduce

DOF(減小景深)and

cause

fabricationdifficulties(制造困難)Reduce

lUV

to

DUV,

to

EUV,

and

to

X-RayNeed

develop

light

source,

PR

and

equipmentReduce

K1Phase

shift

mask(相位移掩膜)107分辨率與景深—分辨率Wavelength(波長)and

Frequency(頻率)ofElectromagnetic

Wave(電磁波)分辨率與景深—分辨率108分辨率與景深—景深Depth

Of

Focus

(DOF,景深)DOF:The

range(范圍)that

light

is

in

focus(焦點 對準(zhǔn))and

can

achieve(獲得)good

resolution (好的分辨率)of

projected

image(投影圖像)109Depth

Of

Focus

(DOF,景深)110分辨率與景深—景深Exercise

2,

K2

=

0.50.300.250.170.13111分辨率與景深—景深Depth

Of

Focus

(DOF,景深)Smaller

NA,

larger

DOFPrefer

reduce

l

than

increase

NA

to

improve

resolutio112分辨率與景深—景深曝光光源—I線和深紫外線113I-line

and

DUV(Deep

Ultra

Violet)Mercury(汞燈)I-line,365

nmCommonly

used

in

0.35

mm

lithography(光刻)DUV

KrF

excimer

laser(準(zhǔn)分子激光),248

nm0.25

mm,0.18

mm

and

0.13

mm

lithography(光刻)DUV

ArF

excimer

laser,

193

nm<

0.13

mmDUV

F2

excimer

laser,

157

nmStill

in

R&D,

<

0.10

mm

application曝光光源—極紫外線114EUV(Extreme

Ultra

Violet)EUV,

13.5

nm—7

nm

/10

nm

application

in

the

future

臺積電和阿斯麥（ASML）聯(lián)手將EUV設(shè)備的每日產(chǎn)能提升到了1022片晶圓EUV光刻技術(shù)難題—光源：激光等離子體光源和放電等離子體光源—掩模版：反射技術(shù)，多層Mo/Si薄膜，1個原子誤差曝光光源—極紫外線115EUV

SystemEUV光源；鍍有多層膜的集光器和反射鏡；裝載反射掩膜的掩膜臺；反射式投影物鏡；裝有硅片的掃描工件臺。曝光光源—極紫外線EUV

Mask石英襯底緩沖層吸收層(TaBN)抗光反射涂層

(TaBON)Mo/Si116曝光光源—X光X-ray

lithography(X光光刻)(鈹)117曝光光源—X光Optical

Mask

and

X-ray

Mask