半導(dǎo)體中英對(duì)照.doc

倒序?yàn)g覽0| Acceptor - An element, such as boron, indium, and gallium used to create a free hole in a semiconductor. The acceptor atoms are required to have one less valence electron than the semiconductor. 受主 - 一種用來(lái)在半導(dǎo)體中形成空穴的元素，比如硼、銦和鎵。受主原子必須比半導(dǎo)體元素少一價(jià)電子 Alignment Precision - Displacement of patterns that occurs during the photolithography process. . u! F. W ! b# j4 q 套準(zhǔn)精度 - 在光刻工藝中轉(zhuǎn)移圖形的精度。 2 v I; S4 U, T* r d9 H3 b! c Anisotropic - A process of etching that has very little or no undercutting , i( N: Z7 u; 3 z 各向異性 - 在蝕刻過(guò)程中，只做少量或不做側(cè)向凹刻。 : 3 v& P1 s1 3 z. ; ? Area Contamination - Any foreign particles or material that are found on the surface of a wafer. This is viewed as discolored or smudged, and it is the result of stains, fingerprints, water spots, etc. + 7 c* p x H3 B0 m; r 沾污區(qū)域 - 任何在晶圓片表面的外來(lái)粒子或物質(zhì)。由沾污、手印和水滴產(chǎn)生的污染。 ) 6 f: K* N7 I8 r; W$ t m* P Azimuth, in Ellipsometry - The angle measured between the plane of incidence and the major axis of the ellipse. 橢圓方位角 - 測(cè)量入射面和主晶軸之間的角度。 Backside - The bottom surface of a silicon wafer. (Note: This term is not preferred; instead, use back surface.) 背面 - 晶圓片的底部表面。（注：不推薦該術(shù)語(yǔ)，建議使用“背部表面”） 7 h4 p; ? D! j0 H( I0 X- x Base Silicon Layer - The silicon wafer that is located underneath the insulator layer, which supports the silicon film on top of the wafer. 底部硅層 - 在絕緣層下部的晶圓片，是頂部硅層的基礎(chǔ)。 Bipolar - Transistors that are able to use both holes and electrons as charge carriers. 雙極晶體管 - 能夠采用空穴和電子傳導(dǎo)電荷的晶體管。 - ? x5 Q5 x& d! A* P% y Bonded Wafers - Two silicon wafers that have been bonded together by silicon dioxide, which acts as an insulating layer. ; o! k) , + i( V# Z- Y 綁定晶圓片 - 兩個(gè)晶圓片通過(guò)二氧化硅層結(jié)合到一起，作為絕緣層。 Bonding Interface - The area where the bonding of two wafers occurs. 綁定面 - 兩個(gè)晶圓片結(jié)合的接觸區(qū)。 : c& H! o, # 4 Q Buried Layer - A path of low resistance for a current moving in a device. Many of these dopants are antimony and arsenic. 0 / J% K% G, A, B6 b, t, c. I* w 埋層 - 為了電路電流流動(dòng)而形成的低電阻路徑，攙雜劑是銻和砷。 Buried Oxide Layer (BOX) - The layer that insulates between the two wafers. 氧化埋層(BOX) - 在兩個(gè)晶圓片間的絕緣層。 Carrier - Valence holes and conduction electrons that are capable of carrying a charge through a solid surface in a silicon wafer. 6 p% i. k S- N2 I 載流子 - 晶圓片中用來(lái)傳導(dǎo)電流的空穴或電子。 . k1 Y# W# % ?5 v5 Chemical-Mechanical Polish (CMP) - A process of flattening and polishing wafers that utilizes both chemical removal and mechanical buffing. It is used during the fabrication process. 化學(xué)-機(jī)械拋光(CMP) - 平整和拋光晶圓片的工藝，采用化學(xué)移除和機(jī)械拋光兩種方式。此工藝在前道工藝中使用。 Chuck Mark - A mark found on either surface of a wafer, caused by either a robotic end effector, a chuck, or a wand. - k7 v: H1 s q, t$ t0 u 卡盤痕跡 - 在晶圓片任意表面發(fā)現(xiàn)的由機(jī)械手、卡盤或托盤造成的痕跡。 Cleavage Plane - A fracture plane that is preferred. # d; r7 3 x8 / u& 6 n 解理面 - 破裂面 * N+ r& s$ R1 t0 J. w Crack - A mark found on a wafer that is greater than 0.25 mm in length. & B A3 c E6 j; u 裂紋 - 長(zhǎng)度大于0.25毫米的晶圓片表面微痕。 ( z( c2 T( y4 : | Crater - Visible under diffused illumination, a surface imperfection on a wafer that can be distinguished individually. 4 D# R Z; e9 p6 - ? 微坑 - 在擴(kuò)散照明下可見的，晶圓片表面可區(qū)分的缺陷。 Conductivity (electrical) - A measurement of how easily charge carriers can flow throughout a material. 傳導(dǎo)性（電學(xué)方面） - 一種關(guān)于載流子通過(guò)物質(zhì)難易度的測(cè)量指標(biāo) 。 7 T x4 k p8 j7 R/ e Conductivity Type - The type of charge carriers in a wafer, such as “N-type” and “P-type”. t* V4 J: / , W0 e+ L, L 導(dǎo)電類型 - 晶圓片中載流子的類型，N型和P型。 Contaminant, Particulate (see light point defect) 污染微粒 （參見光點(diǎn)缺陷） / E1 & F# _) O1 ; t- C% V8 J, I Contamination Area - An area that contains particles that can negatively affect the characteristics of a silicon wafer. * 1 |7 i # 4 h& j. k 沾污區(qū)域 - 部分晶圓片區(qū)域被顆粒沾污，造成不利特性影響。 Contamination Particulate - Particles found on the surface of a silicon wafer. 沾污顆粒 - 晶圓片表面上的顆粒。 ( o8 J# d+ E. V* u Crystal Defect - Parts of the crystal that contain vacancies and dislocations that can have an impact on a circuits electrical performance. 晶體缺陷 - 部分晶體包含的、會(huì)影響電路性能的空隙和層錯(cuò)。 Crystal Indices (see Miller indices) l6 a 3 ; q9 G& g0 s7 W 晶體指數(shù) （參見米勒指數(shù)） . . H1 U/ j e% r Depletion Layer - A region on a wafer that contains an electrical field that sweeps out charge carriers. 耗盡層 - 晶圓片上的電場(chǎng)區(qū)域，此區(qū)域排除載流子。 Dimple - A concave depression found on the surface of a wafer that is visible to the eye under the correct lighting conditions. ! Y+ C5 c( I/ F$ L: Y( v 表面起伏 - 在合適的光線下通過(guò)肉眼可以發(fā)現(xiàn)的晶圓片表面凹陷。 8 f& u7 u) Y6 n8 M$ A U; y Donor - A contaminate that has donated extra “free” electrons, thus making a wafer “N-Type”. . w/ n5 _+ C8 T* ?( P 施主 - 可提供“自由”電子的攙雜物，使晶圓片呈現(xiàn)為N型。 M, A% F! - U! x9 Z4 m Dopant - An element that contributes an electron or a hole to the conduction process, thus altering the conductivity. Dopants for silicon wafers are found in Groups III and V of the Periodic Table of the Elements. 攙雜劑 - 可以為傳導(dǎo)過(guò)程提供電子或空穴的元素，此元素可以改變傳導(dǎo)特性。晶圓片攙雜 劑可以在元素周期表的III 和 V族元素中發(fā)現(xiàn)。 M5 y2 g( Q D1 % z Doping - The process of the donation of an electron or hole to the conduction process by a dopant. 9 t i4 b. ! y; E z S5 % P2 W i 摻雜 - 把攙雜劑摻入半導(dǎo)體，通常通過(guò)擴(kuò)散或離子注入工藝實(shí)現(xiàn)。 Edge Chip and Indent - An edge imperfection that is greater than 0.25 mm. 7 _7 Y2 Y8 ?; u4 q 芯片邊緣和縮進(jìn) - 晶片中不完整的邊緣部分超過(guò)0.25毫米。 Edge Exclusion Area - The area located between the fixed quality area and the periphery of a wafer. (This varies according to the dimensions of the wafer.) ; w$ s/ S) 9 q8 . m& 邊緣排除區(qū)域 - 位于質(zhì)量保證區(qū)和晶圓片外圍之間的區(qū)域。（根據(jù)晶圓片的尺寸不同而有所不同。） Edge Exclusion, Nominal (EE) - The distance between the fixed quality area and the periphery of a wafer. : F8 ? z2 B# 8 m$ S C6 W 名義上邊緣排除(EE) - 質(zhì)量保證區(qū)和晶圓片外圍之間的距離。 Edge Profile - The edges of two bonded wafers that have been shaped either chemically or mechanically. ! M v ?2 g# B- s0 E1 $ k 邊緣輪廓 - 通過(guò)化學(xué)或機(jī)械方法連接起來(lái)的兩個(gè)晶圓片邊緣。 , L: s. e$ z2 H. 7 k9 Etch - A process of chemical reactions or physical removal to rid the wafer of excess materials. 蝕刻 - 通過(guò)化學(xué)反應(yīng)或物理方法去除晶圓片的多余物質(zhì)。 % S6 n o8 l T. v E Fixed Quality Area (FQA) - The area that is most central on a wafer surface. 2 o. I( g, V) T! u$ M 質(zhì)量保證區(qū)(FQA) - 晶圓片表面中央的大部分。 8 8 % V k! D8 E! J* C, g Flat - A section of the perimeter of a wafer that has been removed for wafer orientation purposes. N1 Q Q* A 平邊 - 晶圓片圓周上的一個(gè)小平面，作為晶向定位的依據(jù)。 ) E( k3 L/ c9 l+ K Flat Diameter - The measurement from the center of the flat through the center of the wafer to the opposite edge of the wafer. (Perpendicular to the flat) 平口直徑 - 由小平面的中心通過(guò)晶圓片中心到對(duì)面邊緣的直線距離。 4 6 ! 8 z3 f4 Z Four-Point Probe - Test equipment used to test resistivity of wafers. 四探針 - 測(cè)量半導(dǎo)體晶片表面電阻的設(shè)備。 Furnace and Thermal Processes - Equipment with a temperature gauge used for processing wafers. A constant temperature is required for the process. 1 Y+ R+ z& J2 w 爐管和熱處理 - 溫度測(cè)量的工藝設(shè)備，具有恒定的處理溫度。 H F7 F2 S1 $ x9 M/ I Front Side - The top side of a silicon wafer. (This term is not preferred; use front surface instead.) 正面 - 晶圓片的頂部表面（此術(shù)語(yǔ)不推薦，建議使用“前部表面”）。 6 a9 S( W6 P7 s. B6 ( s/ A) p. g Goniometer - An instrument used in measuring angles. 角度計(jì) - 用來(lái)測(cè)量角度的設(shè)備。 ! j+ S3 T; Q, v T( | X Gradient, Resistivity (not preferred; see resistivity variation) ; m N( ?5 M# k( ? E( 8 j) a 電阻梯度 （不推薦使用，參見“電阻變化”） Groove - A scratch that was not completely polished out. # 2 y0 D: D4 1 p G 凹槽 - 沒(méi)有被完全清除的擦傷。 ) B Z: c Q, H$ D Hand Scribe Mark - A marking that is hand scratched onto the back surface of a wafer for identification purposes. ( O$ x$ e5 B- J# S 手工印記 - 為區(qū)分不同的晶圓片而手工在背面做出的標(biāo)記。 Haze - A mass concentration of surface imperfections, often giving a hazy appearance to the wafer. 4 h: N( K) q * d, R5 N r 霧度 - 晶圓片表面大量的缺陷，常常表現(xiàn)為晶圓片表面呈霧狀。 Hole - Similar to a positive charge, this is caused by the absence of a valence electron. 空穴 - 和正電荷類似，是由缺少價(jià)電子引起的。 Ingot - A cylindrical solid made of polycrystalline or single crystal silicon from which wafers are cut. 晶錠 - 由多晶或單晶形成的圓柱體，晶圓片由此切割而成。 8 3 Y/ l- ! T Laser Light-Scattering Event - A signal pulse that locates surface imperfections on a wafer. 激光散射 - 由晶圓片表面缺陷引起的脈沖信號(hào)。 6 z7 E# O$ B1 W) _$ F8 t9 J Lay - The main direction of surface texture on a wafer. : g& V& X4 L* a w+ L! q 層 - 晶圓片表面結(jié)構(gòu)的主要方向。 Light Point Defect (LPD) (Not preferred; see localized light-scatterer) / m R+ Q) F9 U2 9 N3 O3 ( B5 s 光點(diǎn)缺陷(LPD) （不推薦使用，參見“局部光散射”） - & 0 T( m/ m1 _, y Lithography - The process used to transfer patterns onto wafers. 光刻 - 從掩膜到圓片轉(zhuǎn)移的過(guò)程。 Localized Light-Scatterer - One feature on the surface of a wafer, such as a pit or a scratch that scatters light. It is also called a light point defect. 局部光散射 - 晶圓片表面特征，例如小坑或擦傷導(dǎo)致光線散射，也稱為光點(diǎn)缺陷。 Lot - Wafers of similar sizes and characteristics placed together in a shipment. 批次 - 具有相似尺寸和特性的晶圓片一并放置在一個(gè)載片器內(nèi)。 ; ; a- 1 1 L B$ D8 Z Majority Carrier - A carrier, either a hole or an electron that is dominant in a specific region, such as electrons in an N-Type area. 多數(shù)載流子 - 一種載流子，在半導(dǎo)體材料中起支配作用的空穴或電子，例如在N型中是電子。 Mechanical Test Wafer - A silicon wafer used for testing purposes. 機(jī)械測(cè)試晶圓片 - 用于測(cè)試的晶圓片。 Microroughness - Surface roughness with spacing between the impurities with a measurement of less than 100 m. - b S E. j) f7 N7 T 微粗糙 - 小于100微米的表面粗糙部分。 Miller Indices, of a Crystallographic Plane - A system that utilizes three numbers to identify plan orientation in a crystal. 6 t2 H+ g% i& m Miller索指數(shù) - 三個(gè)整數(shù)，用于確定某個(gè)并行面。這些整數(shù)是來(lái)自相同系統(tǒng)的基本向量。 7 p o# v2 N+ s2 N# f. V Minimal Conditions or Dimensions - The allowable conditions for determining whether or not a wafer is considered acceptable. 最小條件或方向 - 確定晶圓片是否合格的允許條件。 Minority Carrier - A carrier, either a hole or an electron that is not dominant in a specific region, such as electrons in a P-Type area. 少數(shù)載流子 - 在半導(dǎo)體材料中不起支配作用的移動(dòng)電荷，在P型中是電子，在N型中是空穴。 * : o# P- w! J H2 e1 l5 U & V! e Mound - A raised defect on the surface of a wafer measuring more than 0.25 mm. 8 g8 L K B6 I4 N( W5 p2 堆垛 - 晶圓片表面超過(guò)0.25毫米的缺陷。 Notch - An indent on the edge of a wafer used for orientation purposes. 凹槽 - 晶圓片邊緣上用于晶向定位的小凹槽。 Orange Peel - A roughened surface that is visible to the unaided eye. & X9 G4 L7 r$ X( x% J W- o s 桔皮 - 可以用肉眼看到的粗糙表面 Orthogonal Misorientation - 直角定向誤差 - Particle - A small piece of material found on a wafer that is not connected with it. 顆粒 - 晶圓片上的細(xì)小物質(zhì)。 3 I+ i# l( : b. P4 o2 Particle Counting - Wafers that are used to test tools for particle contamination. 7 |3 E* r/ m1 i; O4 ) C3 Y+ n5 1 j 顆粒計(jì)算 - 用來(lái)測(cè)試晶圓片顆粒污染的測(cè)試工具。 Particulate Contamination - Particles found on the surface of a wafer. They appear as bright points when a collineated light is shined on the wafer. 顆粒污染 - 晶圓片表面的顆粒。 9 w8 W. T( k5 m, A% E Pit - A non-removable imperfection found on the surface of a wafer. 6 b8 J& P$ Y! o& L z3 s/ l B/ G 深坑 - 一種晶圓片表面無(wú)法消除的缺陷。 Point Defect - A crystal defect that is an impurity, such as a lattice vacancy or an interstitial atom. 4 y% c4 t+ C. n3 u 點(diǎn)缺陷 - 不純凈的晶缺陷，例如格子空缺或原子空隙。 - q! p$ u2 ?9 d2 w6 r* ?/ p Preferential Etch - 優(yōu)先蝕刻 - Premium Wafer - A wafer that can be used for particle counting, measuring pattern resolution in the photolithography process, and metal contamination monitoring. This wafer has very strict specifications for a specific usage, but looser specifications than the prime wafer. 測(cè)試晶圓片 - 影印過(guò)程中用于顆粒計(jì)算、測(cè)量溶解度和檢測(cè)金屬污染的晶圓片。對(duì)于具體應(yīng)用該晶圓片有嚴(yán)格的要求，但是要比主晶圓片要求寬松些。 Primary Orientation Flat - The longest flat found on the wafer. 主定位邊 - 晶圓片上最長(zhǎng)的定位邊。 Process Test Wafer - A wafer that can be used for processes as well as area cleanliness. * O$ 4 m* _% E I8 G 加工測(cè)試晶圓片 - 用于區(qū)域清潔過(guò)程中的晶圓片。 Profilometer - A tool that is used for measuring surface topography. / J y J) ! e 表面形貌劑 - 一種用來(lái)測(cè)量晶圓片表面形貌的工具。 Resistivity (Electrical) - The amount of difficulty that charged carriers have in moving throughout material. 3 A: T! , z9 6 V7 F; W b 電阻率（電學(xué)方面） - 材料反抗或?qū)闺姾稍谄渲型ㄟ^(guò)的一種物理特性。 2 M% 9 D W5 M! W0 | Required - The minimum specifications needed by the customer when ordering wafers. 6 M4 A0 H% _ : W* 5 l 必需 - 訂購(gòu)晶圓片時(shí)客戶必須達(dá)到的最小規(guī)格。 Roughness - The texture found on the surface of the wafer that is spaced very closely together. 粗糙度 - 晶圓片表面間隙很小的紋理。 4 e9 T8 l% K8 _$ P2 Y Saw Marks - Surface irregularities 5 K4 w! C: s; ! T0 g 鋸痕 - 表面不規(guī)則。 Scan Direction - In the flatness calculation, the direction of the subsites. 掃描方向 - 平整度測(cè)量中，局部平面的方向。 , 2 _$ | y+ I# b4 S, k! V Scanner Site Flatness - * a% u: t( N6 % / V 局部平整度掃描儀 - Scratch - A mark that is found on the wafer surface. 6 K) $ s+ S. m5 |* D+ / N 擦傷 - 晶圓片表面的痕跡。 Secondary Flat - A flat that is smaller than the primary orientation flat. The position of this flat determines what type the wafer is, and also the orientation of the wafer. 第二定位邊 - 比主定位邊小的定位邊，它的位置決定了晶圓片的類型和晶向。 Shape - b B3 7 K D8 x) K9 v% b/ E 形狀 - Site - An area on the front surface of the wafer that has sides parallel and perpendicular to the primary orientation flat. (This area is rectangular in shape) 局部表面 - 晶圓片前面上平行或垂直于主定位邊方向的區(qū)域。 Site Array - a neighboring set of sites 局部表面系列 - 一系列的相關(guān)局部表面。 Site Flatness - 局部平整 - ) N% X, q# Q) ! : L Slip - A defect pattern of small ridges found on the surface of the wafer. 劃傷 - 晶圓片表面上的小皺造成的缺陷。 7 o d% E! O- w G0 y Smudge - A defect or contamination found on the wafer caused by fingerprints. 污跡 - 晶圓片上指紋造成的缺陷或污染。 5 6 t/ x8 Z. d Sori - ( n# A7 S7 o) N3 4 z% Z Striation - Defects or contaminations found in the shape of a helix. ; T6 B+ O9 Y7 T1 Y, h 條痕 - 螺紋上的缺陷或污染。 3 y n* O; o) e5 H1 Z3 A Subsite, of a Site - An area found within the site, also rectangular. The center of the subsite must be located within the original site. 局部子表面 - 局部表面內(nèi)的區(qū)域，也是矩形的。子站中心必須位于原始站點(diǎn)內(nèi)部。 Surface Texture - Variations found on the real surface of the wafer that deviate from the reference surface. 表面紋理 - 晶圓片實(shí)際面與參考面的差異情況。 & X C9 f5 z) ?. O, Test Wafer - A silicon wafer that is used in manufacturing for monitoring and testing purposes. 測(cè)試晶圓片 - 用于生產(chǎn)中監(jiān)測(cè)和測(cè)試的晶圓片。 - a: J x* e9 ) Z& R C# Z Thickness of Top Silicon Film - The distance found between the face of the top silicon film and the surface of the oxide layer. 頂部硅膜厚度 - 頂部硅層表面和氧化層表面間的距離。 $ |5 d; N* ( L; W+ * n Top Silicon Film - The layer of silicon on which semiconductor devices are placed. This is located on top of the insulating layer. # L$ R, D Q W 頂部硅膜 - 生產(chǎn)半導(dǎo)體電路的硅層，位于絕緣層頂部。 $ W8 b/ q _ V* K% P: D Total Indicator Reading (TIR) - The smallest distance between planes on the surface of the wafer. & Q5 e/ V: r, n/ O 總計(jì)指示劑數(shù)(TIR) - 晶圓片表面位面間的最短距離。 7 Z) A) A, f; A4 f+ O1 O R Virgin Test Wafer - A wafer that has not been used in manufacturing or other processes. : U, ?8 Z- A& n5 v; S. w 原始測(cè)試晶圓片 - 還沒(méi)有用于生產(chǎn)或其他流程中的晶圓片。 Void - The lack of any sort of bond (particularly a chemical bond) at the site of bonding. & E4 Q # S8 _* 0 F2 , J 無(wú)效 - 在應(yīng)該綁定的地方?jīng)]有綁定（特別是化學(xué)綁定）。 7 y1 e0 b8 j8 | Waves - Curves and contours found on the surface of the wafer that can be seen by the naked eye. * |) e% T. R( k* G! G( Y 波浪 - 晶圓片表面通過(guò)肉眼能發(fā)現(xiàn)的彎曲和曲線。 Waviness - Widely spaced imperfections on the surface of a wafer. ; r% p9 C. U: + E 波紋 - 晶圓片表面經(jīng)常出現(xiàn)的缺陷。 - e+ K& U: 2 v1 b 1. acceptance testing (WAT: wafer acceptance testing)2. acceptor: 受主，如B，摻入Si中需要接受電子3. ACCESS：一個(gè)EDA（Engineering Data Analysis）系統(tǒng), 9 N/ B% y/ h5 4. Acid：酸5. Active device：有源器件，如MOS FET（非線性，可以對(duì)信號(hào)放大）; s3 c0 m; q- k6. Align mark(key)：對(duì)位標(biāo)記7. Alloy：合金8. Aluminum：鋁1 A3 R! P3 b+ O6 M9. Ammonia：氨水3 b1 C9 U( ?9 F3 d7 W0 g10. Ammonium fluoride：NH4F11. Ammonium hydroxide：NH4OH% M, * |3 e; c& l& C: h% p6 g12. Amorphous silicon：-Si，非晶硅（不是多晶硅）13. Analog：模擬的14. Angstrom：A（1E-10m）埃, W# K+ R# o6 n5 M4 M; b; T0 _, p15. Anisotropic：各向異性（如POLY ETCH）5 D7 T X) t9 # h J L16. AQL(Acceptance Quality Level)：接受質(zhì)量標(biāo)準(zhǔn)，在一定采樣下，可以95%置信度通過(guò)質(zhì)量標(biāo)準(zhǔn)（不同于可靠性，可靠性要求一定時(shí)間后的失效率）17. ARC(Antireflective coating)：抗反射層（用于METAL等層的光刻）2 + 0 k) L: r18. Antimony(Sb)銻19. Argon(Ar)氬8 A7 v1 l5 r N5 0 20. Arsenic(As)砷21. Arsenic trioxide(As2O3)三氧化二砷; C4 Y3 k! P5 C22. Arsine(AsH3)4 | k( + r) v+ 23. Asher：去膠機(jī)( L: H, F0 O* Q( D% P24. Aspect ration：形貌比（ETCH中的深度、寬度比）7 R1 Y$ V8 b9 H25. Autodoping：自攙雜（外延時(shí)SUB的濃度高，導(dǎo)致有雜質(zhì)蒸發(fā)到環(huán)境中后，又回?fù)降酵庋訉樱?6. Back end：后段（CONTACT以后、PCM測(cè)試前）27. Baseline：標(biāo)準(zhǔn)流程% v/ X1 D4 ) L h1 |8 a$ ?& + H28. Benchmark：基準(zhǔn)29. Bipolar：雙極 K/ Y# D$ 2 P( j/ Z+ U8 s. B30. Boat：擴(kuò)散用（石英）舟31. CD： （Critical Dimension）臨界（關(guān)鍵）尺寸。在工藝上通常指條寬，例如POLY CD 為多晶條