ANSYS R18 SI產(chǎn)品新功能介紹

1、ANSYS R18 SI產(chǎn)品新功能介紹HFSS update：寬帶自適應(yīng)網(wǎng)格 Broadband Adaptive Meshing.寬帶: 用戶自行設(shè)置感興趣的頻段 HFSS自動(dòng)確定頻率點(diǎn) 2HPC任務(wù)提交: 分段獨(dú)立設(shè)置為仿真的每一步定義獨(dú)立的HPC 資源Initial meshAdaptive meshFrequency sweep在整個(gè)仿真過程中優(yōu)化HPC資源34ANSYS Siwave R18 UpdateR18 SIwave新功能帶感應(yīng)線位置的多相電源模塊直流壓降求解器與Mechanical和Icepak進(jìn)行電熱交互（焦耳熱）用于電源完整性分析的RLCG提取(SIwave-CPA &

2、 Q3D求解器)3D Layout界面下的DoE優(yōu)化（需Optimetrics License）時(shí)頻域串?dāng)_掃描平面波激勵(lì)求解器 (電磁耐受度)Synopsys HSPICE, Cadence PSPICE, and SIMetrix Simplis電路模型5RH-CTAThermal TotemAnalog/IPPowerArtistRTLRedHawkSoCSIwaveQ3DNexximCPAPSIHSPICEPSPICEHFSSSpectre6R18 SIwave新功能帶感應(yīng)線位置的多相電源模塊直流壓降求解器與Mechanical和Icepak進(jìn)行電熱交互（焦耳熱）用于電源完整性分析的RL

3、CG提取(SIwave-CPA & Q3D求解器)3D Layout界面下的DoE優(yōu)化（需Optimetrics License）時(shí)頻域串?dāng)_掃描平面波激勵(lì)求解器 (電磁耐受度)Synopsys HSPICE, Cadence PSPICE, and SIMetrix Simplis電路模型7帶傳感線位置的多相電源模塊SIwave新加入的功能。通過檢測負(fù)載工作電壓，自動(dòng)平衡PCB或封裝上的負(fù)載電流。工作原理：通過感應(yīng)線檢測電壓，為了確保CPU或ASIC上電壓合 適，多相電源模塊使用反饋環(huán)滿足PCB板上負(fù)載電流 需求。Active DeviceVRM8多相電源模塊簡介91、多相電源模塊基礎(chǔ) 遠(yuǎn)程監(jiān)

4、測 電流平衡2、執(zhí)行SIwave直流壓降分析3、在SIwave中如何建立多相電源模塊4、直流仿真設(shè)置、分析和結(jié)果開環(huán)電源供電網(wǎng)絡(luò)在真實(shí)電源供電網(wǎng)絡(luò)中，在電源和負(fù)載芯片之間會存在路徑電阻 使得負(fù)載電壓產(chǎn)生跌落 Creates a drop in the delivered voltage. 負(fù)載電壓隨負(fù)載電流變化而變化 Load voltage changes as the load current varies. = 10閉環(huán)電源供電網(wǎng)絡(luò)遠(yuǎn)程監(jiān)控挽救負(fù)載電壓創(chuàng)建反饋環(huán)路，將負(fù)載電 壓反饋給可變電流源，有 助于減少電壓跌落。這是一個(gè)真實(shí)的降壓型變 換器的直流平均模型.Remote sense l

5、ine( )= Want to be “big enough”to make this term small.KCL: 11= 開關(guān)電源模塊主流降壓型電源變化器等效電路。 脈寬調(diào)制脈沖控制開關(guān)管。Includes the popular “buck”regulators.PWM pulse controlsthe switching transistors.占空比 Duty cycle = /優(yōu)點(diǎn)：電源模塊功耗低 Advantage: only a small amount of power is dissipated by regulator.缺點(diǎn)：輸出電流和電壓有紋波 Disadvanta

6、ge: output current/voltage has a ripple.Load() = 12多相電源模塊使用2個(gè)或更多的電源變換器同時(shí)工作對設(shè)計(jì)有幫助。每一路電源變換器叫就是一個(gè)相 源。Having two or more regulators working together can help.所有的供電電流流入同一電源網(wǎng)絡(luò)Both supply current to the power delivery network.可以調(diào)節(jié)這些電源變化器的相位消除紋波 Can adjust their phases to (mostly) cancel ripples out.() ()13

7、 ()為什么要使用多相電源模塊14減少輸出紋波.先進(jìn)處理器工作電壓低(1 to 2 volts)，并且消耗電流很大，根據(jù)芯片工作活躍程度為1-150A.使用單一電源模塊很難提供這么大的電流，非常昂貴。多相電源模塊構(gòu)架From Walters US Patent 6,278,263 (Intersil Corp.)15電流平衡需求16如果設(shè)計(jì)不小心，不同路徑的供電電流會差異很大。 在供電網(wǎng)絡(luò)中不用位置，路徑電阻不同。 不同的電源芯片驅(qū)動(dòng)力有差異.This is bad: 負(fù)擔(dān)重的通道很快發(fā)熱. 可能會導(dǎo)致負(fù)擔(dān)重的通道過早失效 喪失了多相架構(gòu)的其他好處為了避免失效，多相電源模塊使用主動(dòng)控制技術(shù)去平

8、衡電流Multi-Phase VRM Implementation電流反饋電壓反饋Cleverness17From Walters US Patent 6,278,263 (Intersil Corp.)電壓電流反饋組合每一個(gè)相源的驅(qū)動(dòng)力是與電壓反饋和電流反饋的組合成線性關(guān)系Each phase source is driven by an amplified version of thecombined voltage and current differences:, = + ( ,)18負(fù)反饋 Negative feedback:如果檢測電壓超過參考電壓，或者相電流大于平均電流，相電壓將

9、會降低 ； Phase voltage will decrease if the sense voltage is above the reference voltage, or Phase current is above the average current. = 1, , SIwave普通直流壓降分析19直流壓降分析: 定義電流負(fù)載和電壓源*注意: 這里定義的電壓源只用來做非多相的直流壓降分析。因?yàn)槎嘞噙x 項(xiàng)會自動(dòng)創(chuàng)建電壓源。當(dāng)多相分析時(shí)，這些電壓源需要被禁止。20配置直流壓降分析:點(diǎn)擊 Configure Simulation 按鈕點(diǎn)擊 Validate 按鈕驗(yàn)證模型沒問題點(diǎn)擊 Si

10、mulate 按鈕輸入仿真名如果想做熱分析，勾選 “Export power dissipation for usein ANSYS Icepak and Mechanical” 選項(xiàng)驗(yàn)證電壓源 node to ground為 “Negative”直流壓降分析: 仿真設(shè)置21直流壓降分析：精度和HPC設(shè)置配置直流壓降分析：選擇 “Other solver options” 按鈕選擇 DC 頁面, 將滑桿拉倒“Optimum Accuracy”選擇 Multiprocessing 頁面, 設(shè)置合適的核數(shù)用于HPC并行計(jì)算. 然后點(diǎn)擊 OK點(diǎn)擊 Launch 按鈕開始仿真22直流壓降分析：結(jié)果直流

11、壓降仿真結(jié)果板上多個(gè)電源模塊輸出不同的 電流值；因此也顯示出不同的輸出功率，會導(dǎo)致 產(chǎn)品不穩(wěn)定23多相電源模塊直流壓降分析24多相直流壓降分析配置:關(guān)掉前面設(shè)置的電壓源禁止掉普通直流壓降分析中用過的直流電壓源點(diǎn)擊 Home 菜單點(diǎn)擊 Circuit Element Parameters 圖標(biāo)點(diǎn)擊 Voltage Sources 頁面選中第一行，按住 shift 鍵，選中最后一行。點(diǎn)擊 Deactivate 按鈕25多相直流壓將配置：定義多相電源模塊建立多相電源模塊分析 :按住CTRL鍵，選中多相系統(tǒng)中所 有的電源模塊。點(diǎn)擊鼠標(biāo)右鍵，選擇 “CreateMultiphase VRM” 命令多相電

12、源模塊定義窗口將被打開26多相電源模塊配置: 定義多相電源模塊PowerMOdules:板上每一個(gè)被選中的電源模塊都會被列在這 里每一個(gè)被列在這里的電源模塊要處于激活或 禁止?fàn)顟B(tài)，看設(shè)計(jì)者的興趣了。每電源模塊應(yīng)該給出一個(gè) relative strength，strength 是電源模塊實(shí)際供電電流與電源模塊 設(shè)計(jì)電流的比值 ，此項(xiàng)設(shè)置可以被設(shè)計(jì)按照 不同的者的設(shè)計(jì)情況進(jìn)行更改。27Remote Sense Pins:遠(yuǎn)程監(jiān)測管腳是是被檢測器件上的管腳。此處的反饋電流值將被測量。器件上的管腳必須被定義。正端和負(fù)端管腳 信息可以使用下拉工具盒手動(dòng)添加；用戶也 可以簡單點(diǎn)擊 “Select in L

13、ayout” 按鈕，然后在 版圖中點(diǎn)擊器件管腳。.Nominal Voltage and Load Regulation:標(biāo)稱電壓是電源模塊的輸出電壓。負(fù)載調(diào)節(jié)是指對于一個(gè)給定的負(fù)載電流，電 源模塊輸出電壓會比設(shè)計(jì)電壓偏移多少。相數(shù):仿真中用到的電源模塊數(shù)目多相電源模塊配置: 定義多相電源模塊建立多相電源模塊分析多相電源模塊定義窗口：輸入 Relative Strength百分比， 激活或禁止電源模塊對于遠(yuǎn)程監(jiān)測管腳，可以手動(dòng)輸入器件名、器件標(biāo)號和管腳，也可以點(diǎn)擊 “Select in Layout” 按鈕，在版圖上選擇管腳。輸入標(biāo)稱電壓，負(fù)載調(diào)節(jié)百分比總負(fù)載電流量28多相電源模塊配置: 定義

14、多相電源模塊一旦多相電源模塊被定義，通過Advance菜單下 的 Multiphase VRMs 按鈕，可以隨時(shí)編輯修改。 打開電源模塊定義，一系列電源模塊模塊定顯示 出來。在本例中，只有一個(gè)多項(xiàng)電源義被創(chuàng)建。 用戶也可以點(diǎn)擊Add 按鈕創(chuàng)建多個(gè)多項(xiàng)電源組合。用戶可以通過點(diǎn)擊 Edit按鈕激活或禁止不同的的定義和不同的電源模塊。注意：如果存在多個(gè)多項(xiàng)電源定義，用戶必須確 認(rèn)只激活了那些對當(dāng)前仿真要用的多項(xiàng)電源。29使用多相電源模塊進(jìn)行直流壓降分析使用多相電源定義啟動(dòng)直流壓降分析：選擇 Simulation菜單選擇 Compute DC IR選項(xiàng)輸入仿真名字如果還要做熱分析，勾選 “Export

15、 power dissipation for usein ANSYS Icepak and Mechanical”選項(xiàng)驗(yàn)證電壓源 node to ground為 “Negative”選擇 “Other solver options” 按鈕選擇 DC 頁面，設(shè)置滑竿到 “Optimum Accuracy”選擇 Multiprocessing 頁面，設(shè)置HPC核數(shù)，然后點(diǎn)擊 OK點(diǎn)擊 Launch 按鈕開始仿真30直流仿真結(jié)果對邊清晰顯示：當(dāng) 多相電源模塊被使用時(shí)，電流和 功耗更為平均沒有激活多相電源模塊激活電源模塊直流壓降分析：結(jié)果對比31直流分析結(jié)果：電壓分布云圖直流仿真的電壓分布結(jié)果顯示：在

16、結(jié)果窗口中的 DC IR Drop Simulation 中，找到像看的 仿真項(xiàng)目，點(diǎn)擊鼠標(biāo)右擊選擇 “Plot Currents/Voltages在 DC IR Drop Simulation Results 窗口中, 取消 GND 網(wǎng)絡(luò)勾選取消 過孔電流 Iv, 電流密度 J, 和功率 P 的結(jié)果顯示，只 顯示電壓 V.點(diǎn)擊 “Update Plot Display” 按鈕32電壓分布云圖顯示：使用多電源模 塊使得所有負(fù)載工作電壓正常。沒激活多相的多電源模塊激活多相的多電源模塊直流分析結(jié)果：電壓分布云圖對比33在SIwave中設(shè)置Icepak熱仿真從SIwave啟動(dòng) Icepak 仿真:選

17、擇 Simulation 菜單點(diǎn)擊 Icepak 按鈕輸入仿真名選擇直流仿真結(jié)果（激活或未激活多相）。注意，兩個(gè) Icepak仿真被 執(zhí)行，一個(gè)激活多相，一個(gè)沒有激活。選擇傳導(dǎo)或?qū)α鳎ū纠惺褂脗鲗?dǎo)）設(shè)置網(wǎng)格刨分滑竿為 Basic 或 Detailed設(shè)置HPC核數(shù)選擇熱環(huán)境頁面，做合理設(shè)置。在本例中使用簡單的自然對流。對多相電源模塊直流壓 降分析結(jié)果進(jìn)行設(shè)置對普通電源模塊直流壓 降分析結(jié)果進(jìn)行設(shè)置34Icepak熱分析結(jié)果Icepak返回的熱仿真結(jié)果顯示：在結(jié)果窗口中，選擇適合的 Icepak 仿真結(jié)果，點(diǎn)擊鼠標(biāo)右鍵，選擇 Display Temperature35溫度分布云圖顯示：使用多相

18、電源模塊使得PCB板上溫差分布更均勻沒激活多相的多電源模塊溫度激活多相的多電源模塊設(shè)計(jì)溫度低一些( 3 cooler)Icepak熱分析結(jié)果對比36R18 SIwave新功能帶感應(yīng)線位置的多相電源模塊直流壓降求解器與Mechanical和Icepak進(jìn)行電熱交互（焦耳熱）用于電源完整性分析的RLCG提取(SIwave-CPA & Q3D求解器)3D Layout界面下的DoE優(yōu)化（需Optimetrics License）時(shí)頻域串?dāng)_掃描平面波激勵(lì)求解器 (電磁耐受度)Synopsys HSPICE, Cadence PSPICE, and SIMetrix Simplis電路模型37PCI G

19、raphics card使用Icepak進(jìn)行直流熱分析 card with38componentsPCI express spec:Max power not to exceed 75 W Includes dissipation from IC dies and PCB Joule heatingImpact of SIwave &Icepak LinkDC Power ConsumptionWithout Joule Heating69.3 WattsWith Joule Heating75.7 WattsSIwave GUI Launches Icepak Solver:Conducti

20、on only analysisNatural convection analysisForced convection (fan) analysisMulti-phase VRM design supportIDF boundary conditions & Heat Sink creationGeometry pre-processing for stand-alone IcepakComponent power (Watts) allocation during setupJoule heating power mapping into Icepak & MechanicalCut pl

21、ane temperature monitoring in XY-, XZ-, and YZ-planesAbility to “Open” and perform more detailed analysis & reporting in the stand-alone IcepakSIwave Icepak自動(dòng)雙向耦合Thermal Cut-PlanesTemperature Plots with IDF setup39Joule Heating40SIwave Icepak 電熱分析設(shè)置SIwave - Mechanical電熱力分析41R18 SIwave新功能帶感應(yīng)線位置的多相電源模

22、塊直流壓降求解器與Mechanical和Icepak進(jìn)行電熱交互（焦耳熱）用于電源完整性分析的RLCG提取(SIwave-CPA & Q3D求解器)3D Layout界面下的DoE優(yōu)化（需Optimetrics License）時(shí)頻域串?dāng)_掃描平面波激勵(lì)求解器 (電磁耐受度)Synopsys HSPICE, Cadence PSPICE, and SIMetrix Simplis電路模型42芯片-封裝-分析支持芯片封裝電路板協(xié)同分析生成RLCG models芯片設(shè)計(jì)者和封裝/電路板設(shè)計(jì)的紐帶芯片設(shè)計(jì)者使用Linux平臺上的RedHawk-iCPA封裝/電路板設(shè)計(jì)者使用Windows或Linux版

23、本的SIwave-CPA(SIwave-PI)什么是CPA43封裝/PCB設(shè)計(jì)工程師:提取RLCG模型 顯示版圖弱點(diǎn) 進(jìn)行設(shè)計(jì)迭代 供電電源系統(tǒng)直流到幾個(gè)GHz單個(gè)凸點(diǎn)級別快速修改設(shè)計(jì)信號完整性分析快速提取數(shù)百個(gè)信號生成RLCK IBIS封裝模型快速掃描信號屬性.芯片設(shè)計(jì)工程師:在芯片仿真中包含封裝影響 芯片-封裝-電路板聯(lián)合仿真熱點(diǎn)探測聯(lián)合設(shè)計(jì)&協(xié)同可視化CPA技術(shù)對誰有好處？44SIwave-CPA 特點(diǎn)精度使用FEM求解器對電源網(wǎng)絡(luò)分析 在Q3D的10%精度范圍內(nèi).選擇MoM求解器（Q3D）精度更高速度-精度兼顧性能/容量容量巨大的FEM求解器完整封裝和PCB結(jié)構(gòu)數(shù)萬個(gè)sources/s

24、inks快速提取數(shù)分鐘到幾個(gè)小時(shí)既使上萬個(gè)凸點(diǎn)的極大封裝技術(shù)使用3D FEM和3D MoM求解器類似PSI and Q3D 求解器提取RLCG網(wǎng)表頻率相關(guān)體現(xiàn)地彈效應(yīng)系統(tǒng)流程和利用整合進(jìn)ANSYS RedHawk整合進(jìn)ANSYS SIwave-PI非常易用，報(bào)告詳細(xì)CPA應(yīng)用Silicon Interposer and RDL硅通孔(TSVs)結(jié)構(gòu)封裝電路板支持去耦電容和嵌入式元件PI and SI 分析IBIS封裝建模寬帶Spice模型45SIwave-CPA亮點(diǎn)46求解器高粒度凸點(diǎn)級別的快速RLCG提取精確的MoM求解器(Q3D)用于高精度應(yīng)用場合模型寬帶SPICE網(wǎng)表和IBIS PKG模

25、型生成ESD和CPA模型用于ANSYS RedHawk/Totem芯片-封裝-電路板協(xié)同仿真結(jié)果詳細(xì)報(bào)告中包含：RLCG 表單管腳級別的電阻和電感色彩云圖與主流SPICE仿真器兼容的SPICE網(wǎng)表HTML網(wǎng)頁式報(bào)告包含完整的仿真設(shè)置、模型結(jié)構(gòu)和仿真結(jié)果。報(bào)告中結(jié)果的交互 控制用于定制化SIwave-CPA RLCG參數(shù)提取-自動(dòng)交互索引報(bào)告CPA Solver Q3D Solver47交互的 WebGL 報(bào)告CPA求解器能夠進(jìn)行凸點(diǎn)/焊球分辨力的RLGC參數(shù)提取可在凸點(diǎn)/焊球和管教組上顯示 色柱SIwave-CPA報(bào)告48SIwave-CPA結(jié)果對比49Wirebond Package PDN

26、 SystemSolverNetR(m)L (pH)C (pF)Solve Time (Hours)Speed UpRAM (GB)RAMReductionQ3D (TPA)PDN C1.5879.2128.448-71-CPAPDN C1.6179.9129.30.1480 x135xQ3D (TPA)PDN D0.1612.6973.448-71-CPAPDN D0.1612.9979.30.1480 x135xSolverNetR(m)L(nH)C(pF)Solve Time(minutes)SpeedUpRAM(MB)RAMReductionQ3D (TPA)PDN A12.3310.

27、624.84.51-748-CPAPDN A12.9312.425.80.411x2104xQ3D (TPA)PDN B9.1224.824.84.51-748-CPAPDN B9.2230.725.90.411x2104xFlip-Chip PDN SystemR18 SIwave新功能帶感應(yīng)線位置的多相電源模塊直流壓降求解器與Mechanical和Icepak進(jìn)行電熱交互（焦耳熱）用于電源完整性分析的RLCG提取(SIwave-CPA & Q3D求解器)3D Layout界面下的DoE優(yōu)化（需Optimetrics License）時(shí)頻域串?dāng)_掃描平面波激勵(lì)求解器 (電磁耐受度)Synops

28、ys HSPICE, Cadence PSPICE, and SIMetrix Simplis電路模型50SIwave S參數(shù)求解器集成進(jìn)電子桌面ANSYS電子桌面3D Layout項(xiàng)目中增加SIwave求解支持參數(shù)化求解支持RSM遠(yuǎn)程求解支持DoE優(yōu)化Insert HFSS 3D Layout DesignAdd SIwave AC SYZ Solution51 EnablesDoE Optimetrics（Design of Experiments）SIwave電磁場求解器集成進(jìn)3D LayoutHPC Setup52SIwave參數(shù)化設(shè)計(jì)53Easy SDM (頻譜分解法) SetupA

29、NSYS電子桌面中的RSM遠(yuǎn)程求解支持 在電子桌面中運(yùn)行SIwave SYZ 求解器掃頻利用SIwave優(yōu)化參數(shù)求解器不同的操作模式本機(jī)模式分布式工作站模式(有/沒有調(diào)度軟件)分布式刀片集群模式(帶調(diào)度軟件)支持LSF調(diào)度軟件支持Windows HPC調(diào)度軟件為了速度最大化，根據(jù)可用核數(shù)和頻點(diǎn)自動(dòng)調(diào)整負(fù)載首先，分布頻點(diǎn)第二，分布CPU核運(yùn)行中動(dòng)態(tài)調(diào)整負(fù)載1GHz2GHz3GHz4GHz5GHz6GHz7GHz8GHz9GHz10GHz提升SIwave SYZ 差值掃頻速度比分立掃頻和舊版本的差值掃頻快 了近2倍54R18 SIwave新功能帶感應(yīng)線位置的多相電源模塊直流壓降求解器與Mechan

30、ical和Icepak進(jìn)行電熱交互（焦耳熱）用于電源完整性分析的RLCG提取(SIwave-CPA & Q3D求解器)3D Layout界面下的DoE優(yōu)化（需Optimetrics License）時(shí)頻域串?dāng)_掃描平面波激勵(lì)求解器 (電磁耐受度)Synopsys HSPICE, Cadence PSPICE, and SIMetrix Simplis電路模型55Time Domain Cross-talkWaveform ViewerZo 特征阻抗時(shí)域串?dāng)_Coupling Plots3D Interactive Bar GraphsTime Domain Near- and Far-end Vo

31、ltages頻域串?dāng)_Coupling PlotsFrequency Domain Near- and Far-end Coupling Coefficients整板Zo&串?dāng)_掃描交互式WebGL 報(bào)告顯示56SIwave電磁敏感度57IEEE論文：SIwave電磁敏感度58RLCG參數(shù)表改善增加SIMetrix Simplis的SPICE模型輸出59SIwave&HFSS構(gòu)架虛擬系統(tǒng)3D Assembly，組裝ECAD & MCAD選擇合適的求解器HFSS, SIwave or PlanarEM在電路分析原理圖中鏈接TX/RX分析LNAIBIS & IBIS-AMIQuickEye & Ver

32、ifEyeHSPICE*PSPICE*高速總線合規(guī)檢查模板DDR4GDDR5。60*HSPICE solver requires Synopsys license; Nexxim supports HSPICE syntax* Uses Nexxim solver with PSPICE syntaxReceiver ICDriver ICA digital signalU7.(pin)60U1.(pin)25Zo voidAZo void BVoid Aon return current pathVoid Bon return current pathSNA provides:1. Zo P

33、rofile & Delay for all paths of a signal.2. Reflection Noise throughtransient analysis.阻抗&飛行時(shí)間計(jì)算ImpedanceVColhtaagreawctaevreifsotrimc at receiver IC61自動(dòng)創(chuàng)建&求解仿真電路62NRZ and PAM-4眼圖分析6364ANSYS Q3D R18 Update觸屏設(shè)計(jì)65觸屏&芯片封裝網(wǎng)格刨分加速“Phi Mesher” for Q3D Targets Touch Panel DisplaysRemoves ACIS ProcessesSurfa

34、ce Meshing“Cut Up” Advancement Targets reduction of adaptive passesduring Meshing ProcessProject NumberAverage Speed Up400%15 inch Speed Up9 hours to 1.5 hours66converencePhi Mesher for Planar StructuresMeshes planar structures in a fraction of the timeFaster solution times with equal or betterModel

35、R17Total SolveTimegR18Total SolveTimeR18 vs. R17Total Solve time Speed UpR17MeshingTimeR18MeshingTimeR18 vs. R17Mesh SpeedUpR18 vs. R17RAMReductionPanel A36hr 5min13hr 7min3x10hr 51min1hr 33min7x1.4xPanel B14hr 38min4hr 19min3.5x3h 17min29min7x1.8x67Multi-physics: ThermalCouplingTemperature dependen

36、t AC and DC solutionsBi-directional power and heat mapping using Feedback IteratorCompatible withIcepakFLUENTMechanical ThermalApplication AreasPower ElectronicsPower ConversionCable Modeling6869Power Converter DesignPredict parasitic performance to maximize Power ConverterEfficiencyThree-Phase Mode

37、lSingle-Phase Model70Power Converter DesignCurrent DCCurrent 10 MHzNIGBT_DB1.IC-8.2520.00NIGBT_DB1.V-2.00100.0047.00m48.75m48.00mSwitching OnNIGBT_DB1.IC-8.2520.0053.2540.00NIGBT_DB1.VCE-2.00202.00100.0047.23m47.24m47.26m47.27mSwitching OffNIGBT_DB1-7.5020.00-2.00100.0053.25202.0044.50256.0040.00CE.

38、IC200.0047.00m48.75m48.00mNIGBT_DB1.IC0-7.50NIGBT_DB1.VCE NIGBT_DB1.VCE-2.0044.50256.00200.0020.00100.0047.23m47.24mSwitching On47.26m47.27mSwitching Off71ANSYS Icepak R18 UpdateIcepak R18Added Mesh Level Support for SIwave Icepak solutionAdded automated iterative loopImproved Via handling capabilit

39、iesIndividually modeling vias no K averagingVia Drill holes importedRedHawk CTM import with back annotation of Temps into RHMeshing ImprovementsSolver ImprovmentsVaccum - enable radiation control in fluid zonesMass & Heat fluxes across periodic surfacesAsymmetric periodic boundariesSpaceClaim Design

40、 Modeler incorporates DME “Simplify Functions”Arbitrary Board Outline Imports using IDFImproved Krylov ROM for efficient network modelingPost ProcessingLED Efficiency as a function of temp.Solar Heat Flux reportingImproved Surface ProbingSmooth 3D ContoursOptimized Manhattan displaysTransient option

41、 for “Full Reports”Plane Cut improvements - restrict to solid & fluid regionsNode-weighted interpolation for accurate facet-based reportingCu-brass72Icepak Vision - R18.1 & BeyondCreate an Automated, Streamlined Electro-Thermal Multi-Physics Solution that utilizes Native MCAD/ECAD for First Pass Mes

42、h/Solve SuccessKey Drivers/MandatesModern UI, Ease-of-UseIntegration into AEDTRapid Release CyclesR18.1 First releaseInitial exposure with mostcommon feature setCPS with EnclosureSteady-state thermalImproved WorkflowNative MCAD ModelerECAD-MCAD AssemblyIntegrated Electro-ThermalWorkflowGeometry Clea

43、n Up & SimplificationANSYS Electronics Desktop (AEDT)AEDT-Icepak73Icepak Summary74Long Term Commitment to Icepak that is MCAD & ECAD CentricIcepak Vision - Streamlined Multi-physics PerformanceSimplify Functions Placed into SpaceClaim & AEDT at R18ANSYS Electronics Desktop Icepak Initial Release Pla

44、nned for R18.1Improvements to Release Process Enables Rapid Release Cycles for CustomersStreamlines the Unique Multi-physics flow for Icepak, Simplorer, & Maxwell75感謝聆聽76LeadFrame EditorLead Frame EditorCreates SIwave & 3D Layout GeometriesCreates HFSS & Q3D 3D GeometriesLead Frame EditorSIwave QFP

45、Package from Lead Frame EditorLeadframe EditorSIwave77ANSYS Electronics DesktopOpen DXFImport DXF FileImported DXF file is shown in the Editor. All the layers are shown in the DXF FilesworkspaceLead frame Editor WorkflowLaunch Lead frame EditorImport DXFEdit Cross SectionCopy Geometry-Lead-Wire0-Net

46、name0Build PolygonNet Assignment (Optional)Export to ANF/AEDT/SAT78Edit Cross SectionEdit Cross SectionIn the Cross section windowMold and Die properties height can be assigned One of package types: QFN/QFP/DIP/SO can be selected Wirebond profile types can be selected Import the Netlist file if pres

47、ent.Lead frame Editor WorkflowLaunch Lead frame EditorImport DXFEdit Cross SectionCopy Geometry-Lead-Wire0-Netname0Build PolygonNet Assignment (Optional)Export to ANF/AEDT/SATSelect the Netlist file which maps the Lead numbers with Net namesSelect the Wirebond ProfileSelect the package TypeR18 Featu

48、res:New package types added:DIP family, SO familyLead(ParICs) ModelingBondwire Profile setting79Lead Frame EditorExport ANF/AEDT/SATFrom the Cross Section workspace, Right-click on Cross Section and select one of the options : Export XFL/ANF, Export to HFSS 3D Layout, HFSS Design, Q3D Extractor Desi

49、gnLead frame Editor WorkflowLaunch Lead frame EditorImport DXFEdit Cross SectionCopy Geometry-Lead-Wire0-Netname0Build PolygonNet Assignment (Optional)Export to ANF/AEDT/SATR18 Features:Export as HFSS projectExport as Q3D projectExport as SAT file8081SIwave-PSIRequires PSI Solver OptionSIwave-PSI是專用

50、于封裝和PCB分析的三維全波快速有限元場求解器利用RedHawk CPM模型將芯片電源網(wǎng)絡(luò)包含在CPS流程的電源網(wǎng)絡(luò)分析中。SIwave-PSI支持PI Advisor的去耦電容自動(dòng)分析SIwave-PSI支持電源通道構(gòu)建器創(chuàng)建RedHawk封裝模型功能:SYZ參數(shù)提取交流電流分析82What is SIwave-PSI?100200600700800-130-110-120-100-90-80-70300400500Frequency (MHz)Trace Current (dBA)Simulation MeasurementEMC envelopeFailure !Package/PCB

51、EMI MapSIwave-PSI應(yīng)用：CPS EMI電磁干擾分析83PSI交流電流分析：總輻射功率Exports the total radiated power as afunction of frequency in .csv format84PSI交流電流分析：被選網(wǎng)絡(luò)上的電流分布選擇關(guān)注網(wǎng)絡(luò)， 點(diǎn)擊Update Plot Display按鈕。顯示被選網(wǎng) 絡(luò)上的表面電流85TSV分析SIwave-PSI原生支持TSV陣列提取用戶將硅建模成半導(dǎo)體，添加TSV鍍層/sidewalls例如二氧化硅用戶可以使用編輯TSV特征設(shè)置，將任意過孔轉(zhuǎn)化成PSI提供了一種簡單的3D-IC工作流程和TSV

52、提取選 項(xiàng)，輕松進(jìn)行分析用戶可以在結(jié)果窗口中檢視每個(gè)關(guān)注頻點(diǎn)下的RLGC結(jié)果。用戶可以輸出TSV提取得到的SPICE模型用于SPICE 電路仿真。User can output the spice netlist of the TSV extraction for use in spice simulations86改善CPM處理支持.PLOC管腳位置文件自動(dòng)創(chuàng)建Pin Groupp自動(dòng)生成端口自動(dòng)創(chuàng)建8788HFSSBroadband Adaptive MeshingBroadband Adaptive MeshingHighest?What frequency should be used

53、 for the mesh?Lowband?Middle?Highband?Cavity Diplexer89Broadband Adaptive Meshing, cont.With mesh link a multi-frequency mesh can be createdBut it can be computationally expensive90Broadband Adaptive Meshing, cont.HighestCavity DiplexerMulti-frequency: Refine multiple frequencies in parallelLowestLo

54、wbandMiddleHighband91Broadband Adaptive Meshing, cont.Broadband: User sets the frequency sweep of interest HFSS determines frequencies automatically 92Broadband Adaptive Meshing Accuracy93Broadband Adaptive Meshing PerformanceTypeAdapt (min)Sweep (min)Speedu pMesh Link8.77.1-Multi-Freq7.56.01.2Broad

55、band5.03.51.9Performance Using 12 CoresTypeAdapt(min)Sweep(min)SpeedupMesh Link43.47.7-Multi-FreqBroadband94Performance Using 32 CoresBAM: Broadband Adaptive Meshing95Broadband HFSSUtilizing multiple frequencies in parallel to adaptmesh across a frequency bandProvides reliable an

56、d guaranteed accurate mesh forentire frequency bandHPC: Frequencies can be solved in parallelExample Project: Cavity Diplexer387MHz96396MHzBAM vs. Single Frequency AdaptBAM97SPBAM MeshSpatially uniform meshEach resonator has localized mesh adaption98Single Frequency Mesh 390 MHz a spatially localize

57、d mesh99S-Parameter: Single Point vs. BAMBAM: Solid Lines SP: Dashed LinesHigh band response not correct100BAM Mesh SetupTwo optionsUser can define frequencies for adaptingIndividual frequencies can have unique convergence, max delta SDefine frequency band, HFSS selects frequenciesBAM solution setup

58、s101Comments on BAM meshBAM achieved quicker convergence, fewer passes, to final responseBAM by pass6SP pass 9. Does not get the high band response correctBAM solution more accurateMore uniform throughout volume102Two Point vs. BAMSet two frequencies for adapt, one in each pass band, 387 and 396 MHz

59、BAM1032 pt.Comments on 2 pt. meshVery comparable accuracy as 10 pt. adaptingNot as uniformly distributedMuch better than single point adapt104105HFSSS-Parameter Only Matrix SolveS-Parameter Only Matrix SolveOnly hold in memory matrix for extracting S-Parameters10-20% speed up per solution pointExamp

60、le: 16 Element Waveguide Slot Antenna, 447 vs. 183MBHPC solves more frequency point in parallel in same memory106S-Parameter Only Matrix Solve, #2Two connectors on PCB327k tetrahedra, 1.978k matrix sizeDiscrete sweep w fields: 01:40 13.5 GDiscrete point n fields: 01:28 3.4 GB12% faster 4X savings in