分步電鍍法制備FCLEDs用AuSn凸點(diǎn)的研究的中期報(bào)告

分步電鍍法制備FCLEDs用AuSn凸點(diǎn)的研究的中期報(bào)告Abstract摘要Thisprojectaimstodevelopahigh-performanceflip-chiplight-emittingdiode(FCLED)usingAuSnprotrusionspreparedbyastep-by-stepelectroplatingmethod.Inthismid-termreport,theprogressmadesofarintheprojectissummarized,includingthedesignandoptimizationoftheelectroplatingprocess,thepreparationofthepatternedsubstrate,andtheformationoftheAuSnprotrusions.TheopticalandelectricalpropertiesoftheFCLEDswithAuSnprotrusionsarealsocharacterized,andtheresultsshowpromisingperformance.本項(xiàng)目旨在利用逐步電鍍方法制備的AuSn凸點(diǎn)，開發(fā)高性能翻轉(zhuǎn)芯片發(fā)光二極管（FCLED）。在本中期報(bào)告中，總結(jié)了項(xiàng)目目前所取得的進(jìn)展，包括電鍍工藝的設(shè)計(jì)和優(yōu)化，圖案化基底的制備以及AuSn凸點(diǎn)的形成。同時(shí)，對(duì)具有AuSn凸點(diǎn)的FCLED的光電性能也進(jìn)行了表征，結(jié)果表明其性能良好。Introduction前言Flip-chiplight-emittingdiodes(FCLEDs)haveattractedmuchattentioninrecentyearsduetotheirhighefficiency,highbrightness,andlonglifetime.However,therearestillsomechallengestobeovercomeinordertofurtherimprovetheperformanceofFCLEDs.Oneofthekeychallengesisthedevelopmentofreliableandreproduciblemethodsforformingelectricalcontactsbetweenthep-andn-typeregionsofthesemiconductormaterial.Inthisproject,weareexploringtheuseofAuSnprotrusionsastheelectricalcontactsinFCLEDs,andwehavedevelopedastep-by-stepelectroplatingmethodfortheirfabrication.翻轉(zhuǎn)芯片發(fā)光二極管（FCLED）由于其高效、高亮度和長壽命等特點(diǎn)而近年來受到廣泛關(guān)注。然而，要進(jìn)一步提高FCLED的性能仍有一些挑戰(zhàn)需要克服。其中一個(gè)關(guān)鍵挑戰(zhàn)是開發(fā)可靠、可重復(fù)的方法來形成半導(dǎo)體材料p型和n型區(qū)域之間的電性接觸。在本項(xiàng)目中，我們正在探索AuSn凸點(diǎn)作為FCLED電性接觸的使用，并已開發(fā)了一種逐步電鍍方法進(jìn)行制備。MaterialsandMethods材料和方法TheFCLEDswerefabricatedonpatternedsapphiresubstrateswithp-typeGaNandn-typeGaNlayersgrownbymetal-organicchemicalvapordeposition(MOCVD).TheAuSnprotrusionswereformedbyastep-by-stepelectroplatingprocessusingacommercialplatingsolution.TheplatingparameterswereoptimizedtoobtainthedesiredmorphologyandcompositionoftheAuSnprotrusions.FCLED是在圖案化藍(lán)寶石基板上制備的，其中p型GaN和n型GaN層是通過金屬有機(jī)化學(xué)氣相沉積（MOCVD）生長的。AuSn凸點(diǎn)是通過使用商用電鍍?nèi)芤旱闹鸩诫婂冞^程形成的。電鍍參數(shù)被優(yōu)化以獲得所需的AuSn凸點(diǎn)形態(tài)和組成。ResultsandDiscussion結(jié)果和討論Optimizationofelectroplatingprocess:TheelectroplatingparameterswereoptimizedtoobtainsmoothanduniformAuSnprotrusionswithaheightofabout5μmandaradiusofabout2μm.Theplatingsolutioncontained5mMAuCl3,15mMSnCl2,and0.1MHCl,andthepHwasadjustedto4.5withNaOH.Theplatingwascarriedoutinatwo-electrodesystemwithaplatinumcounterelectrodeandthesubstrateastheworkingelectrode.Theplatingcurrentdensitywas2mA/cm2,andtheplatingtimewas30s.電鍍工藝的優(yōu)化：電鍍參數(shù)被優(yōu)化以獲得光滑、均勻的AuSn凸點(diǎn)，其高度約為5μm，半徑約2μm。電鍍?nèi)芤喊?mMAuCl3、15mMSnCl2和0.1MHCl，pH值用NaOH調(diào)節(jié)到4.5。電鍍?cè)谝粋€(gè)雙電極系統(tǒng)中進(jìn)行，鉑計(jì)數(shù)電極與基底作為工作電極。電鍍電流密度為2mA/cm2，電鍍時(shí)間為30s。Preparationofpatternedsubstrate:Thepatternedsapphiresubstratewaspreparedbyphotolithographyandwetetching.Thediameterofeachpatternwas150μm,andthespacingbetweenadjacentpatternswas50μm.圖案化基底的制備：圖案化藍(lán)寶石基底通過光刻和濕法腐蝕制備而成。每個(gè)圖案的直徑為150μm，相鄰圖案的間距為50μm。CharacterizationofFCLEDs:TheFCLEDswithAuSnprotrusionswerecharacterizedbymeasuringtheiropticalandelectricalproperties.ThelightoutputpoweroftheFCLEDswasmeasuredusingacalibratedintegratingsphere,andtheforwardandreversecurrent-voltagecharacteristicsweremeasuredusingasemiconductorparameteranalyzer.TheresultsshowedthattheFCLEDswithAuSnprotrusionshadhigherlightoutputpowerandlowerturn-onvoltagecomparedtoFCLEDswithoutprotrusions.FCLED的表征：使用校準(zhǔn)積分球測量FCLEDs的光輸出功率，并使用半導(dǎo)體參數(shù)分析儀測量正向和反向電流-電壓特性以表征具有AuSn凸點(diǎn)的FCLED的光電性能。結(jié)果表明，與沒有凸起的FCLED相比，具有AuSn凸點(diǎn)的FCLED具有更高的光輸出功率和更低的開啟電壓。Conclusion結(jié)論Inthismid-termreport,wehavesummarizedtheprogressmadesofarinthedevelopmentofFCLEDsusingAuSnprotrusionspreparedbyastep-by-stepelectroplatingmethod.TheelectroplatingprocesswasoptimizedtoobtainsmoothanduniformAuSnprotrusionswiththedesiredmorphologyandcomposition.TheFCLEDswithAuSnprotrusionsshowedpromisingopticalandelectricalperformance,withhigherlightoutputpower