【電子與通信】Lecture4[1] Micro-process technology Etching process

1、Lecture 4Micro-process technologyEtching process清華大學(xué)材料科學(xué)與工程系廖建能 教授1Etching processBasic Concepts of EtchingWet EtchingSpecific Wet Etches Silicon Silicon Dioxide AluminumDry (Plasma) Etch Mechanisms Chemical Etching Physical Etching (sputtering) Ion Enhanced Etching Plasma Reactors Dry Etch Chemistr

2、y 2IntroductionEtching: using photoresist or SiO2/Si3N4 as mask layer to selectively remove part of the materialsEtching is done either in “dry or “wet methods- Wet etching uses liquid etchants with wafers immersed in etchant solution. - Dry etching uses gas phase etchants in a plasma. Wet Etch: che

3、mical process only Dry Etch: chemical and physical (sputtering) process 3Basic ConceptsEtching is consisted of 3 process: Mass transport of reactants (through a boundary layer) to the surface to be etched Reaction between reactants and the film(s) to be etched at the surface Mass transport of reacti

4、on products from the surface through the surface boundary layer 4Types of Etching ProcessesIsotropic (等向性):Best to use with large geometries, when sidewall slope does not matter, and to undercut the maskQuick, easy, and cheapAnisotropic (非等向性):Best for making small gaps and vertical sidewallsTypical

5、ly more costly5Wet EtchingDiffusion reactive species from the liquid bulk through the boundary layer to the surface of waferReaction of species at the surface to form solvable speciesDiffuse reaction products away from the surface through the boundary layer into the bulk of the liquidAdvantages: Hig

6、h selectivity because it is based on chemical processesDisadvantages: Isotropic, poor process control and particulates 6Wet Etching 2The etch rate can be controlled by any of the three serial processes Preference is to have reaction rate controlled process because Etch rate can be increased by tempe

7、rature Good control over reaction rate temperature of a liquid is easy to control Mass transport control will result in non-uniform etch rate Boundary layer un-even Etchant is stirred to minimize boundary layer and thus make etching reaction rate controlled Etch rate is a function of temperature, sp

8、ecific reaction and concentration 7Isotropic Etching (Silicon dioxide)Etch is isotropic and easily controlled by dilution of HF in H2O Thermal oxide etches at 1200 /min in 6H2O:1HF 300 /sec or 1 mm/min in 49 wt% HF Faster etch rate for doped or deposited oxide High Etch Selectivity (SiO2/Si) 100 Buf

9、fered HF (BHF) or Buffered oxide etchant (BOE) provides consistent etch rates In regular HF etches, HF is consumed and the etch rate drops Serious process control issue HF buffered with NH4F to maintain HF concentration 6 NH4F:1HF NH4FNH3+ HF8Isotropic Etch (Silicon Nitride)9Isotropic Etch (Silicon)

10、Silicon is etched by nitric acid and hydrofluoric acid mixturesUse oxidant to oxidize silicon to form silicon dioxide followed by HF etch of silicon dioxideOxidation: HNO3 SiO2 Reduction: HF SiF6Excess nitric acid results in a lot of silicon dioxide formation and etch rate becomes limited by HF remo

11、val of oxide (Polishing)10Isotropic Etch (Silicon)Doping selective etches developed for detecting pn junctions and for etch stops 1HF:3HNO3:8CH3COOH etches heavily doped silicon (1019cm-3) but does not etch lightly doped silicon Rheavy-doping= 15*Rlight-doping Ethylenediamine-pyrocatechol-water etch

12、es lightly doped silicon but does not attack heavily doped p-layers Defect Selective Etch form etch pits at dislocations, stacking faults and precipitates Defect density observable by optical microscopy after staining 11Isotropic Etching (Aluminum)Aluminum etches in water, phosphoric, nitric and ace

13、tic acid mixtures Converts Al to Al2O3with nitric acid (evolves H2) Dissolve Al2O3 in phosphoric acid Gas evolution leading to bubbles Local etch rate goes down where bubble is formed Non-uniformity 50H3PO4:20H2O:1HNO3:1CH3COOH12Anisotropic Etching (Silicon)Orientation selective etch of silicon occu

14、r in hydroxide solutions because of the close packing of some orientations relative to other orientations Density of planes : R(111) R(110) R(100) direction etches faster than direction R(100)= 100 R(111) It is reaction rate limited 13Summary of Wet etchingWet etches are selective isotropic and fast

15、, usually reaction rate limited 14Dry (Plasma) EtchingDirectional etching due to presence of ionic species in plasma and biased electric fieldTwo components existed in plasma- Ionic species results in directional etching- Chemical reactive species results in high etch selectivityControl of the ratio

16、 of ionic/reactive components in plasma can modulate the dry etching rate and etching profile 15RF Plasma PhysicsElectric field applied across two electrodes alternately at radio frequency Plasma are ionized atoms / molecules and free electrons Voltage bias develops between the plasma and electrodes

17、 because of the difference in mobilities (masses) of electrons and ions Plasma is positively biased with respect to the electrodes Normal plasma condition16RF Plasma Physics 217Plasma Etching ProcessChemical etching: free radicals react with material to be removed Physical etching or sputtering: ion

18、ic species bombard the materials to be removed Ion enhanced etching: combined chemical and physical process results in higher material removal rate than each process alone 18Free radicals are electrically neutral species that have incomplete outer shells e.g. CF3and FFree radicals react with film to

19、 be etched and form volatile by-productsMass transport of reactive species from the gas stream to the reaction surface, reaction takes place at the surface, followed by mass transport of reaction products back to the gas streamOxygen is added to CF4 plasma to increase the amount of reactive F specie

20、s (O reacts with CF3and CF2 and hence reduce the recombination rate of F)Chemical etch19Chemical EtchPure chemical etch is isotropic or nearly isotropicThe etching profile depends on arrival angles and sticking coefficients of free radicals Free radicals in plasma systems have isotropic arrival angl

21、es and low sticking coefficients 20Physical EtchIonic species are accelerated towards each electrode by alternating electric field The ionic species such as Cl2+, CF4+, CF3+(or Ar+ in a purely physical sputter etch) strike the wafer surface and remove the material to be etched Physical etch is direc

22、tional and non-selective (sputter yield does not vary much for different materials)21Ion Enhanced Etch (IEE)IEE is an anisotropic and highly selective etching process Ion bombardment can enhance one of the following steps during chemical etch: surface adsorption, etching reaction, by-product formati

23、on, by-product removal (inhibitor layer) and removal of un-reacted etchants Example: formation of inhibitor layer which consists of polymers formed from C2F6 during reactive ion etch of SiO2 22Etching profile High inhibitor deposition rateLow inhibitor deposition rate23Plasma Reactors (Barrel Etcher

24、s)Purely chemical etch selective and isotropic Chemical reactive species transport to wafer surface through diffusion process poor uniformity due to long diffusion pathMainly used for PR removal 24Parallel Plate EtchersBoth chemical reaction and physical sputtering process occurPlasma mode: pressure

25、 0.1 1 Torrvoltage drop10 100 eVReactive ion etch mode:pressure 10 100 mTorrvoltage drop 100 700 eV 25High Density Plasma SystemInductively coupled PlasmaElectron Cyclotron Resonance Plasma Plasma density 1011 1012 ions/cm3; Low operation pressure 1 10 mTorrIndependent control of RF bias (ion energy

26、) and ion density (plasma density) 26Sputter etch & Ion - MillingPurely physical sputtering process poor selectivity and high anisotropicHigh ion energy ( 500 eV)Issues:- radiation damage- re-deposition- faceting (sputter yield is a function of incident angle)Focused ion beam can be used to etch ver

27、y small areas for wafer repair27Plasma etching mechanism28Plasma etching mechanismChemical ProcessPhysical ProcessWet etchingPlasma etchingReactive Ion etchingHigh density plasma etchingSputter etching & ion millingpressureselectivityenergyanisotropicity29Types of Dry Etching Processes30Plasma Etch

28、Methods for Various Films Choice of reactant gasses to etch each specific film Ability to form volatile by-products Etch selectivity to resist and underlying films Anisotropicity Boiling points are good indicators of volatility of species 31Dry Etch Chemistries32Plasma Etch Methods for Various Films

29、 Most reactant gasses contain halogens Cl, F, Br, or I Exact choice of reactant gasses to etch each specific film depends on Ability to form volatile by-products Etch selectivity to resist and underlying films Anisotropicity Boiling points are good indicators of volatility of species Lower boiling p

30、oint, higher tendency to evaporate 33Plasma Etching (Silicon dioxide)CF4 etch is isotropic; Anisotropic etching can be achieved by adding H2 to reduce F free radicals Use of CHF3 or C2F6 results in more polymer deposition on sidewalls High bias voltage (400 500 eV) can enhance vertical etch rate In

31、general, use of O2 to increase F conc. and H2 to reduce F conc. Reduction of F/C ratio of the etch gas improves selectivity of SiO2 over Si Polymer on sidewalls needs to be removed with O2 or CF4 34Plasma Etching (Silicon dioxide)Effect of C/F RatioSidewall Passivation35Plasma Etching (Silicon)Fluor

32、ine based chemistry (CF4, NF3 and SF6) tend to be isotropic - When anisopicity is not important, SF6/O2 is a good chemistry for high selectivity- When anisotropicity is desired, start with CF4/H2 and followed by CF4/O2 (undercutting may occur) Chlorine based chemistry (Cl2, HCl, SiCl4, BCl3) result

33、in anisotropic and selective etching (etch rate lower than F chemistry) Etch rate increased by ion bombardment Can be anisotropic without polymer inhibitor formation Selectivity to oxide is high (100:1) Anisotropicity enhanced by adding small amount of O2 Bromine based chemistry (HBr, Br2) are simil

34、ar to chlorine based etchants (etch rate slower than F or Cl) Anisotropic and selective to oxide without polymer inhibitor Adding O2 promotes inhibitor formation (forming SiO2 from Si and removal of C from resist erosion 36Plasma Etching (Aluminum)Presence of native oxide Al2O3 on Al surface require

35、s a breakthrough etch before the main etch Use Ar sputter Use BCl3, SiCl4, CCl4 or BBr3 to scavenge O2 & H2O Fluorine is not used because AlF3 is not volatile Cl2 etches Al isotropically For anisortopic etching, sidewall inhibitor formation is needed CHCl3, CFCl3, CCl4 Al/Cu alloys are used in inter

36、connects but Cu does not etch in Cl Etch requires ion bombardment or high temperature Corrosion of Al line occurs when exposed to ambient because Cl on sidewall and resist react with water to form HCl which etches Al, to passivate Al surface after etch before exposure to atmosphere Heat wafer to 100

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