集成電路封裝基板工藝

1、第八講基板技術(shù)1封裝基板簡(jiǎn)介封裝基板正在成為封裝領(lǐng)域一個(gè)重要的和發(fā)展迅速的行業(yè)，國(guó)內(nèi)現(xiàn)在的基板主要依靠進(jìn)口，如日韓以及臺(tái)灣地區(qū)等等。2ITRS中關(guān)于基板技術(shù)的描述3 International Technology Roadmap for Semiconductors， 2005Edition， Assembly and Packaging Assembly and Packaging Difficult Challenges Near-term Assembly and Packaging Difficult Challenges Long-term Package substrates a

2、re both the most expensive component of most packages and the factor limiting package performance. The technology of package substrates will need to be expanded in several areas if the cost and performance projections of the Roadmap are to be met.基板【互連類(lèi)型】基板互連如何實(shí)現(xiàn)？基板互連【多層陶瓷基板】多層陶瓷基板Stacked Via Struct

3、ure多層陶瓷基板Cordierite Glass-Ceramic/Cu Substrate（70層） 多層陶瓷基板技術(shù)9基板互連【微孔疊壓基板】基板互連【微孔疊壓基板】流程BGA及CSP有機(jī)基板工藝12內(nèi)層引線圖形化13內(nèi)層規(guī)則14鉆孔15層間互連-Dog Bone16外層引線圖形化17阻焊膜（綠油）18雙面PBGA基板的制造流程19雙面PBGA基板的制造流程20雙面PBGA基板的制造流程21UV顯影雙面PBGA基板的制造流程22加成法4層（1/2/1）基板工藝23減成法4層（1/2/1）基板工藝24多層PBGA基板6層PBGA基板結(jié)構(gòu)示意圖25高密度BGA基板互連技術(shù)26機(jī)械鉆孔破壞多層基

4、板內(nèi)層線路完整性，導(dǎo)致不必要的寄生電容等大孔徑將占據(jù)元件組裝面積、減小布線面積，不利于高密度封裝受機(jī)械鉆孔能力的限制，導(dǎo)致成本的升高電鍍能力的限制（高的深寬比）積層（增層）法基板的制造27積層技術(shù)的提出與引入傳統(tǒng)多層鍍通孔PCB中，板上超過(guò)50%的面積用于通孔及相關(guān)焊盤(pán)。盲孔和埋孔技術(shù)是一個(gè)發(fā)展階段。通過(guò)控制鉆孔深度及層壓技術(shù)。積層技術(shù)引入，對(duì)于HDI（High Density Interconnect）基板特別有意義。28ITRS的描述The invention of build-up technology introduced redistribution layers on top of

5、 cores. While the build-up layers employed fine line technology and blind vias, the cores essentially continued to use printed wiring board technology with shrinking hole diameters.The next step in the evolution of substrates was to develop high density cores where via diameters were shrunk to the s

6、ame scale as the blind vias i.e. 50 m.The full advantage of the dense core technology is realized when lines and spaces are reduced to 25 m or less. Thin photo resists (15 m) and high adhesion, low pro foils are essential to achieve such resolution.In parallel coreless substrate technologies are bei

7、ng developed. One of the more common approaches is to form vias in a sheet of dielectric material and to fill the vias with a metal paste to form the basic building block.The dielectric materials have little or no reinforcing material. Control of dimensional stability during processing will be essen

8、tial.29積層技術(shù)發(fā)展光致微孔技術(shù)(Photo-Via) 1993年IBM（日本）公司率先提出；激光燒蝕微孔技術(shù)(Laser Via) 1992年由Siemens-Nixdorf公司提出；等離子體微孔技術(shù)(Plasma Via) 1994年瑞士Diconex公司首先報(bào)道。30Photo-via利用光敏介質(zhì)作為感光介質(zhì)層（Photo-Imageable Dielectric），先在完工的雙面核心板上涂布PID層，并針對(duì)特定孔位進(jìn)行光刻，再以化學(xué)鍍銅與電鍍銅進(jìn)行全面加成；也可通過(guò)銀漿等進(jìn)行填孔?？啥啻畏e層得到高密薄形的Build up多層板。其中IBM公司l989年在日本Yasu工廠推出SLC

9、制程(Surface Laminar Circuits)，采用Ciba Probimer 52作為感光介質(zhì)，得到3mil/3mil之基板。31Laser via二氧化碳激光:是利用CO2及摻雜其它如N2、He、CO等氣體，產(chǎn)生脈沖紅外激光，用于Resin Coated Copper Foil（RCC），一般采取選擇性銅蝕刻去除需要激光鉆孔位置的銅，再以CO2激光得到盲孔。YAG激光：固體激光器，高能量可以直接穿透銅皮得到盲孔。準(zhǔn)分子激光32Chemical Etching當(dāng)孔位銅箔被蝕刻去除后，以強(qiáng)堿性化學(xué)溶液對(duì)特殊配方的基材進(jìn)行腐蝕，直到露出底部銅后即得到被淘空的盲孔。33成孔技術(shù)比較34不

10、同鉆孔方式比較35盤(pán)內(nèi)互連孔（Via in Pad）36高密度 可靠性問(wèn)題（焊接時(shí)的空洞等等）幾種BUM基板結(jié)構(gòu)示意（I）37幾種BUM基板結(jié)構(gòu)示意（II）383/2/3 Build up FCBGA Profile39微孔疊壓基板斷面效果圖微孔疊壓基板兩種方式微孔疊壓基板微孔疊壓基板 Stacked Vias with Electrically Conductive Adhesives 微孔疊壓基板CORE微孔疊壓基板CORE/FIRST LAYER微孔疊壓基板Via/Internate微孔疊壓基板SECOND LAYER/Via Drilling微孔疊壓基板Internate/ SR 微孔

11、疊壓基板3F2F1FC1BC2B3B6層：2電源層；（22）信號(hào)層BUMPING增強(qiáng)型BGA(EBGA)基板增強(qiáng)型BGA - Enhanced BGASuper BGA (SBGA) , Super Thin BGA (STBGA), Viper BGA (VBGA), Ultra BGA, 50SBGA基板制造流程（I）51SBGA基板制造流程（II）52Ultra BGA基板制造流程(I)53Ultra BGA基板制造流程(II)54Laser Via 關(guān)鍵技術(shù)rough關(guān)鍵技術(shù)PTH關(guān)鍵技術(shù)PTH關(guān)鍵技術(shù)Embedded PassivesA typical multilayer substrate that developed using low temperature co-